IRF6802SDPbF IRF6802SDTRPbF DirectFET(R)plus Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max 16V max 3.2m@ 10V 4.5m@ 4.5V l Dual Sided Cooling Compatible l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses G G D D l Compatible with existing Surface Mount Techniques S S l 100% Rg tested l DirectFET(R)plus ISOMETRIC SA Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SA MQ MX MT MP MB Description The IRF6802SDTRPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET(R) packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET(R) package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET(R) package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f h VGS, Gate-to-Source Voltage (V) Typical RDS(on) (m) 10 ID = 16A 8 6 T J = 125C 4 2 T J = 25C 0 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 1 www.irf.com (c) 2013 International Rectifier 14.0 ID= 13A 12.0 10.0 Max. Units 25 16 16 13 57 130 66 13 V A mJ A VDS= 20V VDS= 13V VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.78mH, RG = 50, IAS = 13A. September 10, 2013 IRF6802SDTRPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA V/C m VGS = 10V, ID = 16A VGS = 4.5V, ID = 13A Drain-to-Source Breakdown Voltage 25 --- --- VDSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.02 3.2 --- 4.2 Gate Threshold Voltage Gate Threshold Voltage Coefficient --- 1.1 --- 4.5 1.6 -5.9 5.9 2.1 --- Drain-to-Source Leakage Current --- --- --- --- 1.0 150 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance --- --- 160 --- --- --- 100 -100 --- Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 8.8 2.3 13 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- --- 1.1 3.1 2.3 --- --- --- Output Charge --- --- 4.2 13 --- --- Gate Resistance Turn-On Delay Time Rise Time --- --- --- 0.70 9.7 50 --- --- --- Turn-Off Delay Time Fall Time --- --- 13 23 --- --- Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1350 400 97 --- --- --- Min. Typ. Max. Units VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Typ. Max. Units BVDSS V i i VDS = VGS, ID = 35A V mV/C VDS = VGS, ID = 35A A VDS = 20V, VGS = 0V nA VDS = 20V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V S VDS =13V, ID = 13A nC VDS = 13V VGS = 4.5V ID = 13A See Fig.15 nC VDS = 20V, VGS = 0V ns VDD = 13V, VGS = 4.5V ID = 13A i RG= 1.5 See Fig.17 VGS = 0V pF VDS = 13V = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Diode Forward Voltage g VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr --- --- 26 --- --- 130 --- --- 1.0 V --- --- 18 22 27 33 ns nC A Conditions MOSFET symbol showing the D G integral reverse p-n junction diode. TJ = 25C, IS = 13A, VGS = 0V TJ = 25C, IF = 13A di/dt = 260A/s S i i Notes: Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2013 International Rectifier September 10, 2013 IRF6802SDTRPbF Absolute Maximum Ratings Max. Units 1.7 1.1 21 270 -40 to + 150 W Parameter el el f PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range C Thermal Resistance Parameter RJA RJA RJA RJC RJ-PCB el jl kl Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor f e Typ. Max. Units --- 12.5 20 --- 1.0 72 --- --- 5.9 --- C/W 0.014 W/C 100 Thermal Response ( Z thJA ) D = 0.50 10 1 0.20 0.10 0.05 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 R4 R4 A 2 1 2 3 3 4 A 4 Ci= i/Ri Ci= i/Ri 0.01 0.001 1E-006 0.0001 i (sec) 29.131 6.820693 28.050 0.918995 2.9126 0.001521 11.738 0.074589 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 Ri (C/W) 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). 3 R is measured at TJ of approximately 90C. Mounted to a PCB with small clip heatsink (still air) www.irf.com (c) 2013 International Rectifier Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) September 10, 2013 IRF6802SDTRPbF 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 2.3V 100 1 0.1 BOTTOM 10 60s PULSE WIDTH 2.3V 0.01 0.1 1 10 100 0.1 10 100 Fig 5. Typical Output Characteristics 1000 1.6 VDS = 15V 60s PULSE WIDTH ID = 16A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 10 T J = 150C T J = 25C T J = -40C 1 0.1 1.4 V GS = 10V V GS = 4.5V 1.2 1.0 0.8 0.6 1 2 3 4 5 -60 -40 -20 0 Fig 6. Typical Transfer Characteristics 100000 Fig 7. Normalized On-Resistance vs. Temperature 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25C Typical RDS(on) ( m) Ciss 1000 Coss Crss 100 Vgs = 3.5V Vgs = 4.0V Vgs = 5.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 12V Vgs = 15V 10 C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) Tj = 150C 1 VDS, Drain-to-Source Voltage (V) 8 6 4 2 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 60s PULSE WIDTH 2.3V Tj = 25C VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 2.3V www.irf.com (c) 2013 International Rectifier 0 20 40 60 80 100 ID, Drain Current (A) 120 140 Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage September 10, 2013 IRF6802SDTRPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150C T J = 25C T J = -40C 100 10 1 VGS = 0V OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec 100sec 10 DC 1 Ta = 25C Tj = 150C Single Pulse 0.1 0 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Fig 11. Maximum Safe Operating Area 2.2 Typical VGS(th) Gate threshold Voltage (V) 60 50 ID, Drain Current (A) 10msec 40 30 20 10 0 2.0 1.8 1.6 ID = 35A 1.4 1.2 1.0 0.8 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 300 ID 1.8A 2.6A BOTTOM 13A TOP 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current 5 www.irf.com (c) 2013 International Rectifier September 10, 2013 IRF6802SDTRPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS 15V D.U.T V RGSG 20V DRIVER L VDS tp + - VDD IAS A I AS 0.01 tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width 1 s Duty Factor 0.1 % 10% VGS td(on) Fig 17a. Switching Time Test Circuit 6 www.irf.com (c) 2013 International Rectifier tr t d(off) tf Fig 17b. Switching Time Waveforms September 10, 2013 IRF6802SDTRPbF Driver Gate Drive D.U.T + - RG * * * * * *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD ** P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs DirectFET(R)plus Board Footprint, SA Outline (Small Size Can, A-Designation). Please see application note AN-1035 for all details regarding the assembly of DirectFET(R)plus. This includes all recommendations for stencil and substrate designs. G=GATE D=DRAIN S=SOURCE D D 7 S G www.irf.com (c) 2013 International Rectifier S G D D September 10, 2013 IRF6802SDTRPbF DirectFET(R)plus Outline Dimension, SA Outline (Small Size Can, A-Designation). Please see application note AN-1035 for all details regarding the assembly of DirectFET(R)plus. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN MAX A 4.75 4.85 0.187 0.191 B 3.70 3.95 0.146 0.156 C 2.75 2.85 0.108 0.112 D 0.35 0.45 0.014 0.018 0.48 0.52 0.019 0.020 E 0.48 0.52 0.019 0.020 F 0.68 0.72 0.027 0.028 G 0.83 0.87 0.033 0.034 H J 0.38 0.42 0.015 0.016 J1 1.08 1.12 0.043 0.044 0.95 1.05 0.037 0.041 K 2.05 2.15 0.081 0.085 L 0.52 0.62 0.020 0.024 M P 0.08 0.17 0.003 0.007 R 0.02 0.08 0.0008 0.0031 DirectFET(R)plus Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com (c) 2013 International Rectifier September 10, 2013 IRF6802SDTRPbF DirectFET(R)plus Tape & Reel Dimension (Showing component orientation). E A B D C F G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6802SDTRPBF). For 1000 parts on 7" reel, order IRF6802SDTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC CODE MIN MIN MAX MIN MIN MAX MAX MAX A 12.992 6.9 N.C 177.77 330.0 N.C N.C N.C B 0.795 0.75 N.C 19.06 20.2 N.C N.C N.C C 0.504 0.53 13.5 12.8 0.520 0.50 13.2 12.8 D 0.059 0.059 1.5 1.5 N.C N.C N.C N.C E 3.937 2.31 58.72 100.0 N.C N.C N.C N.C F N.C N.C N.C N.C 0.53 18.4 0.724 13.50 G 0.488 0.47 11.9 12.4 N.C 14.4 0.567 12.01 H 0.469 0.47 11.9 11.9 N.C 15.4 0.606 12.01 LOADED TAPE FEED DIRECTION A H F C D B E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.319 0.311 7.90 8.10 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.165 0.158 4.00 4.20 0.197 5.00 0.205 5.20 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2013 International Rectifier September 10, 2013