Logic-Level Power MOSFETs File Number 2269 RFDI6NO5L, RFD16GNO5LSM N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors (MegaFETs) 16 A, 50 V Vaston) = 0.047 Q TERMINAL DIAGRAM Features: Design optimized for 5 voit gate drive D Can be driven directly from Q-MOS, N-MOS, TTL Circuits Compatible with automotive drive requirements SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device GC 92CS-42658 = IN The RFD16NO5L and RFD16NO5LSM n-channel logic level N-CHANNEL ENHANCEMENT MODE power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approach- TERMINAL DESIGNATION ing those of LSI integrated circuits, gives optimum utiliza- j Source tion of silicon, resulting in outstanding performance. They were designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, DRAIN automotive switching, switching regulators, switching con- Tas = DRAIN verters, motor-relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conduc- t_ Gate tance at gate biases in the 3-5 volt range, thereby facilitating TOP VIEW true on-off power control directly from logic circuit supply TO-251AA voltages. r SOURCE The RFD16NO05L is supplied in the JEDEC TO-251 plastic package and the RFD16NO5LSM in the JEDEC TO-252 plas- tic package. DRAIN = DRAIN TAB TOP VIEW ~ GATE TO-252AA 9208-43478 MAXIMUM RATINGS, Absolute-Maximum Values (T. = 25C): DRAIN-SOURCE VOLTAGE, Voss ...... 0: cece cere cere rere rennet eee ee eee EOE R HEATER EER OER R ERE ERE REE ERE Ee EEE EEE ES DRAIN-GATE VOLTAGE, Vocr (Roe = 1MM) GATE-SOURCE VOLTAGE, Ves DRAIN CURRENT: @lo, RMS COMtinuOUS 2.2.0... cece ccc ee ere ne eee een E OREO E EEE REED TEASER EAE E EEE DESEO EERE REE EERO ER EERE EE fom, PUlSed 2... cee ene rece ences eee nn erase ears neenees SINGLE PULSE AVALANCHE ENERGY RATING, East . AVALANCHE CURRENT, fas... 0.0 cece ec eee cece reece een e reenter eee e ener eeeeeees POWER DISSIPATION Pr: 7 OR Derated above Tc = 25C OPERATING AND STORAGE TEMPERATURE, T), Tato 1D Current Limited by package. TVoo = 10 V, starting T; = 25C, L = 1.25 mHy, Ipeax = 16 A. See Figs. 13 and 14. 5-39 Logic-Level Power MOSFETs RFD16NO05L, RFD16NO5LSM ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C unless otherwise specified: IMITS CHARACTERISTIC TEST CONDITIONS ame S AX. UNITS Drain-Source Breakdown Voltage BVoss Ip = 0.25 mA, Ves = 0 V 50 _ Vv Gate Threshold Voltage Ves(th) Ves = Vos, lo == 0.25 mA 1 2 . Vos = 40 V, Vas = 0 V 1 A Zero Gate Voltage Drain Current loss To = 150C _ 50 r, Gate-Source Leakage Current less Ves = +10 V, Vos = OV _ 100 nA Static Drain-Source On Resistance fos(on) e _ e n ve _ ; V one Q Turn-On Time t(on) 60 Turn-On Delay Time ta(on) Von = 25 V, lob = 8A _ 15 (typ.) Rise Time t, loi =Ip2 =O.8A _ 30 (typ.) ns Turn-Off Delay Time ta(off) Ves (clamp) + 5 V,-0.6 V _ 42 (typ.) Fall Time te Ri = 3.125 Q _ 14 (typ.) Turn-Off Time t(off) _ 100 Total Gate Charge Q,(total) | Vas = 0-10 V Voo = 40 V 80 Gate Charge at 5 V Q,(5) Vas = 0-5 V lo=16A - 45 nc Threshold Gate Charge Q,(th) Ves = 0-1 V Ri =2.50 _ 3 Plateau Voltage V(plateau) Ib = 16 A, Vos = 16 V _ 4 v Voo = 25 V, lo = 8A, Ri = 3.1259 Turn-Off Energy Loss per Cycle Eon L =0.2 WH, lor = fg2 = O.8A - 19 ud Ves (clamp) + 5 V, -0.6 V Thermal Resistance, Junction-to-Case Rsc = 2.083 Thermal Resistance, Junction-to-Ambient Rosa _ 100 cw SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS: LIMITS CHARACTERISTIC TEST CONDITIONS MIN. MAX. UNITS Diode Forward Voltage Vsp Iso = 16 A _ 1.5 Vv Reverse Recovery Time tr ir = 16 A, dle/d: = 100 A/us _ 125 ns CASE TEMPERATURE DRAIN CURRENT(a)-4 DRAIN-TO-SOURCE VOLTAGE Wds)-V SOAGEDIGNOSLCF6, Fig. 1 - Safe operating area curve. (Curves must be derated linearly with increase in temperature.) 5-40 DRAIN CURRENT (d)-A CASE TEMPERATURE (Tcl-degC (OGEDIENOSLCFS Fig. 2 - Maximum continuous drain current vs. temperature. Logic-Level Power MOSFETs RFD16NO5L, RFD16NO5LSM PULSE DURATION=80us Tc=25degC x w a 2 5 3 2 < = 4 Zz gz 2 bE z @ ry x a a 3 c Zz w c@ 3 CASE TEMPERATURE (TC-deg DRAIN-TO-SOURCE VOLTAGE (ds)-V POWGEPZSNOSLCFS SATGEDIGNOSLCFE Fig. 3 - Normalized power dissipation vs. temperature Fig. 4 - Typical saturation characteristics. derating curve. Vds=16V 25 ioalical 45 PASE TEST f PULSE OURATIONS@0ve DUTY CYCLE=.5% MAX / ' L > a f , i // 3 2 : UL i 5 30 7 3 w / ae 15) c I// g a g Z q Y/ $10 y { : 15 2 La z 0.5 { 6 Ya Yt ol Zz 15 3.0 45 6.0 =50 o 50 100 150 GATE-TO-SOURCE VOLTAGE Wgsi-V JUNCTION TEMPERATURE (T)-degC VGSGEDIGNOSLCFE AIDSGEDIGNOSLCFE Fig. 5 - Typical transfer characteristics. Fig. 6 - Normalized rason) vs. junction temperature. NORMALIZED RdsiON) NORMAUZED GATE THRESHOLD VOLTAGE Veeth!) Ves - VOLTS) JUNCTION TEMPERATURE (T}-degC Fig. 7 - Normalized fae(ON) VS. Vos. Fig. 8 - Typical normalized gate threshold voltage. 5-41 Logic-Level Power MOSFETs RFD16NO5L, RFD16NO5LSM id=250uA oF 53 38 i Ow Q ro w ze 9 Fe z o> 9 28 3 3% ge 2a JUNCTION TEMPERATURE (Ti-degC DRAIN-TO-SOURCE VOLTAGE {Vos} -V BVOGEP25NO6LCFE CAPGEPZSNORLCFE. Fig. 9 - Drain source breakdown voltage vs. temperature. Fig. 10 - Typical capacitance vs. voltage. 50 RL = 3.105 @ 10 Ig (REF) = 0.60 mA Ves =5V | 48 37.5 eo g 0.75 V, 4 3 0.75 Vpss_Yop = Voss 9 "DSS 84 > 25 > \ GATE t 8 L SOURCE 4a 2 > VOLTAGE 12.5 a 0.50 Voss 0.50 Vpss: 42 0.25 Voss 0.25 Voss DRAIN-SOURCE VOLTAGE Ig (REF) 80 Ig (REF) igiact) TIMEMICROSECONDS ig (ACT 92GS-44164 Fig. 11 - Normalized switching waveforms for constant gate-current. {Refer to RCA application notes AN-7254 and AN-7260.) Yoo 1 t tdlon} - 14 (ott)a ont RL 4 ty 90% bs 90% < Vos 10% Tey" Tee | UT Tot 0 > GATE CURRENT Ipg- - -~~ -- ~~ SWITCHING TEST CIRCUIT SWITCHING WAVEFORMS 92Cs-42922 Fig. 12 - Resistive switching. 5-42