VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 1Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
DESCRIPTION
VSMB1940ITX01 is an infrared, 940 nm emitting diode in
GaAlAs double hetero technology with high radiant power
and high speed, molded in clear, untinted 0805 plastic
package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• Enhanced operating temperature range:
-40 °C to +105 °C
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 72 h, MSL 4, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IR emitter for automotive applications
• High power emitter for low space applications
• High performance transmissive or reflective sensors
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
21531
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMB1940ITX01 6 ± 60 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB1940ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +105 °C
Storage temperature range Tstg -40 to +110 °C
Soldering temperature According to reflow profile Fig. 9 Tsd 260 °C
Thermal resistance junction / ambient JESD 51 RthJA 270 K/W
VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 2Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 153045607590105120
PV- Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
RthJA = 270 K/W
0
20
40
60
80
100
120
0 153045607590105120
IF- Forward Current (mA)
Tamb - Ambient Temperature (°C)
RthJA = 270 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.15 1.35 1.6 V
IF = 1 A, tp = 100 μs VF-2.2- V
Temperature coefficient of VF
IF = 1 mA TKVF --1.5-mV/K
IF = 100 mA TKVF --1.1-mV/K
Reverse current VR = 5 V IR- - 10 μA
Junction capacitance VR = 0 V, f = 1 MHz,
E = 0 mW/cm2CJ-70-pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie3612mW/sr
IF = 1 A, tp = 100 μs Ie-60-mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-40-mW
Temperature coefficient of radiant
power
IF = 1 mA TKφe- -1.1 - %/K
IF = 100 mA TKφe- -0.51 - %/K
Angle of half intensity ϕ-± 60- deg
Peak wavelength IF = 30 mA λp- 940 - nm
Spectral bandwidth IF = 30 mA Δλ -25-nm
Temperature coefficient of λpIF = 30 mA TKλp-0.25- nm
Rise time IF = 100 mA, 20 % to 80 % tr-15-ns
Fall time IF = 100 mA, 20 % to 80 % tf-15-ns
Virtual source diameter d - 0.5 - mm
VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 3Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
0.01
0.1
1
10
100
1 10 100 1000
20921
I
F
- Forward Pulse Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 1 µs
40
60
80
100
120
140
160
180
- 60 - 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Ie rel - Relative Radiant Intensity (%)
tp = 20 ms
IF = 1 mA
21444
IF = 100 mA
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
948013-1
VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 4Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFIEL
Fig. 9 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
20018
VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 5Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters
21501
VSMB1940ITX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 6Document Number: 84258
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REEL DIMENSIONS in millimeters
of the wheel is supplier specic.
Form of the leave open
Issue: 2; 26.04.10
Drawing-No.: 9.800-5096.01-4
specications
according to DIN
technical drawings
Ø 177.8 max.
Ø 55 min.
8.4 +2.5
8.4 +0.15
14.4 max.
Ø 13 + 0.5
- 0.2
1.5 min.
Ø 20.2 min.
Z
Z 2:1
20875
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Revision: 01-Jan-2021 1Document Number: 91000
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