UNISONIC TECHNOLOGIES CO., LTD
2N7000Z
Power MOSFET
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Copyright © 2011 Unisonic Technologies Co., Ltd. QW-R502-535.a
115m Amps, 60 Volts
N-CHANNEL ENHANCEMENT
MODE MOSFET
DESCRIPTION
The UTC 2N7000Z has been designed to minimize on-state
resistance to provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product is
particularly suited for low voltage, low current applications, such as
small servo motor control, power MOSFET gate drivers and other
switching applications
FEATURES
*High density cell design for low RDS(ON)
*Voltage controlled small signal switch
*Rugged and reliable
*High saturation current capability
SYMBOL
2.Gate
1.Sourc
e
3.Drai
n
TO-92
1
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free Package 1 2 3 Packing
2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 S G D Tape Box
2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 S G D Bulk
2N7000ZL-T92-R 2N7000ZG-T92-R TO-92 S G D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
2N7000Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS≤1MΩ) VDGR 60 V
Continuous ±20 V
Gate -Source Voltage Non Repetitive (tp<50μs) VGS ±40 V
Continuous 115 mA
Maximum Drain Current Pulsed ID 800 mA
Maximum Power Dissipation
Derated above 25°C PD 400
3.2
mW
mW/°C
Operating and Storage Temperature TJ,TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 312.5 °C/W
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V,ID=10 μA 60 V
1 μA
Drain-Source Leakage Current IDSS VDS=60V, VGS =0V
TJ=125°C 0.5 mA
Gate-Body leakage, Forward IGSSF V
GS =20V, VDS=0V 10 μA
Gate-Body leakage Reverse IGSSR V
GS =-20V, VDS=0V -10 μA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage VGS(TH) V
DS =VGS, ID=250μA 1 2.1 2.5 V
VGS =10V, ID=500mA
TJ=100°C
1.2
1.7
7.5
13.5
Static Drain-Source On-Resistance RDS(ON) VGS =5.0V, ID=50mA
TJ=100°C
1.7
2.4
7.5
13.5
Ω
VGS = 10V, ID=500mA 0.6 3.75Drain-Source On-Voltage VDS(ON) VGS = 5.0V, ID=50mA 0.09 1.5
V
On-State Drain Current ID(ON) V
GS=10V, VDS 2V≧DS(ON) 500 2700 mA
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 20 50 pF
Output Capacitance COSS 11 25 pF
Reverse Transfer Capacitance CRSS
VDS=25V,VGS=0V, f=1.0MHz
4 5 pF
Turn-On Time tON VDD=30V, RL=150Ω,
ID=200mA, VGS=10V, RGEN=25Ω
20 ns
Turn-Off Time tOFF VDD=30V, RL=150Ω, ID=200mA,
VGS=10V, RGEN=25Ω
20 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward
Voltage VSD V
GS=0V, Is=115mA(Note ) 0.88 1.5 V
Maximum Continuous Drain-Source
Diode Forward Current Is 115 mA
Maximum Pulsed Drain-Source
Diode Forward Current ISM 0.8 A
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
2N7000Z Power MOSFET
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TYPICAL CHARACTERISTICS
VGS
RGEN
VDD
VIN
RL
VOUT
DUT
G
D
S
Switching Waveforms
Pulse Width
Input ,VIN
Output ,VOUT
tON tOFF
tD(OFF)
tR
tD(ON) tF
Inverted
10%
10%10%
50%50%
90%
90%
90%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
