May 1999
BSS84 / BSS110
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
____________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter BSS84 BSS110 Units
VDSS Drain-Source Voltage -50 V
VDGR Drain-Gate Voltage (RGS < 20 KΩ)-50 V
VGSS Gate-Source Voltage - Continuous ±20 V
IDDrain Current - Continuous @ TA = 30/35oC-0.13 -0.17 A
- Pulsed @ TA = 25oC-0.52 -0.68
PDMaximum Power Dissipation TA = 25°C0.36 0.63 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150°C
TLMaximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds 300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient 350 200 °C/W
BSS84 Rev. C1 / BSS110. Rev. A2
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is designed to minimize on-state resistance, provide
rugged and reliable performance and fast switching. They
can be used, with a minimum of effort, in most applications
requiring up to 0.17A DC and can deliver pulsed currents up
to 0.68A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V.
BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V
Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON) .
High saturation current.
S
D
G
© 1997 Fairchild Semiconductor Corporation
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions TypeMin Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µAAll -50 V
IDSS Zero Gate Voltage Drain Current VDS = -50 V,
VGS = 0 V All -15 µA
TJ = 125°C -60 µA
VDS = -25 V, VGS = 0 V -0.1 µA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All -10 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA All -0.8 -1.75 -2 V
RDS(ON) Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A BSS84 3.2 10 Ω
VGS = -10 V, ID = -0.17 A BSS110 2.2 10
gFS Forward Transconductance VDS = -25 V, ID = -0.10ABSS84 0.05 0.27 S
VDS = -10 V, ID = -0.17 ABSS110 0.05 0.29
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz BSS84 37 45 pF
BSS110 37 40
Coss Output Capacitance All 16 25 pF
Crss Reverse Transfer Capacitance All 5 12 pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time VDD = -30 V, ID = -0.27 A,
VGS = -10 V, RGEN = 50 ΩAll 12 nS
trTurn - On Rise Time All 50 nS
tD(off) Turn - Off Delay Time All 10 nS
tfTurn - Off Fall Time All 25 nS
DRAIN-SOURCE DIODE CHARACTERISTICS
ISContinuous Source Diode Current BSS84 -0.13 A
BSS110 -0.17
ISM Maximum Pulsed Source Diode Current (Note 1) BSS84 -0.52 A
BSS110 -0.68
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2 V
VGS = 0 V, IS = -0.34 A (Note 1) BSS110 -1 -1.2
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
BSS84 Rev. C1 / BSS110. Rev. A2
BSS84 Rev. C1 / BSS110. Rev. A2
-6-5-4-3-2-10
-1
-0.8
-0.6
-0.4
-0.2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-8.0
-4.0
-6.0 -5.0
-4.5
-3.5
-2.5
-3.0
-1-0.8-0.6-0.4-0.2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -3V
GS
D
R , NORMALIZED
DS(on)
-3.5
-4.5
-5.0
-6.0
-10
-4.0
-8.0
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Typical Electrical Characteristics
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
I = -0.13A
V = -10V
D
GS
-1-0.8-0.6-0.4-0.2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
D
R , NORMALIZED
DS(on)
25°C
-55°C
V = -10V
GS
Figure 3. On-Resistance Variation
with Temperature Figure 4. On-Resistance Variation
with Drain Current and Temperature
-8-6-4-20
-1
-0.8
-0.6
-0.4
-0.2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C125°C
V = -10V
DS
GS
D
T = -55°C
J
-50 -25 0 25 50 75 100 125 150
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V = V
I = -1mA
D
DS GS
V , NORMALIZED
th
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation
with Temperature
BSS84 Rev. C1 / BSS110. Rev. A2
-50 -25 025 50 75 100 125 150
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
BV , NORMALIZED
DSS
J
0.2 0.4 0.6 0.8 11.2 1.4 1.6
0.001
0.005
0.01
0.05
0.1
0.2
0.5
1
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
25°C
-55°C
SD
S
Figure 7. Breakdown Voltage
Variation with Temperature Figure 8. Body Diode Forward Voltage
Variation with Source
Current and Temperature
Typical Electrical Characteristics (continued)
0 0.5 1 1.52
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -10V
DS
I = -0.13A
D-20V -40V
0.10.20.5 1 2 5 10 20 30 50
2
3
5
10
20
30
50
70
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off)f
r
d(on)
t t
tt
t
t
INVERTED
10%
PULSE WIDTH
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
BSS84 Rev. C1 / BSS110. Rev. A2
-1-0.8-0.6-0.4-0.2
0
0.1
0.2
0.3
0.4
0.5
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
D
FS
V = -10V
DS
125°C
25°C
12 5 10 20 30 50 80
0.005
0.01
0.05
0.1
0.5
1
2
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 13. Transconductance Variation with Drain
Current and Temperature Figure 14. Maximum Safe Operating Area
Typical Electrical Characteristics (continued)
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 350 C/W
θJAθJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
o
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using a circuit board with 175oC/W
typical case-to-ambient thermal resistance.
TO-92 Tape and Reel Data
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SOT-23
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3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
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min 3.50
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13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10. 9
8m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10. 9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
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Dim N
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rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
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B0
A0
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Component Rotation
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FW
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Tc
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SOT-23 Tape and Reel Data and Package Dimensions, continued
September 1999, Rev. C
SOT-23 (FS PKG Code 49)
SOT-23 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A1
1:1
Scale 1:1 on letter size paper
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