May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. BSS84: -0.13A, -50V. RDS(ON) = 10 @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10 @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G D Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage -50 V VDGR Drain-Gate Voltage (RGS < 20 K) -50 V VGSS Gate-Source Voltage - Continuous 20 V ID BSS84 o Drain Current - Continuous @ TA = 30/35 C - Pulsed PD -0.13 -0.17 o -0.52 -0.68 TA = 25C 0.36 0.63 @ TA = 25 C Maximum Power Dissipation BSS110 TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds Units A W -55 to 150 C 300 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 1997 Fairchild Semiconductor Corporation 350 200 C/W BSS84 Rev. C1 / BSS110. Rev. A2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min -50 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A All IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V All V TJ = 125C Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All All A -60 A -0.1 A -10 nA -1.75 -2 V VDS = -25 V, VGS = 0 V IGSSR -15 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA RDS(ON) Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A BSS84 3.2 10 VGS = -10 V, ID = -0.17 A BSS110 2.2 10 gFS Forward Transconductance -0.8 VDS = -25 V, ID = -0.10A BSS84 0.05 0.27 VDS = -10 V, ID = -0.17 A BSS110 0.05 0.29 VDS = -25 V, VGS = 0 V, f = 1.0 MHz BSS84 37 45 BSS110 37 40 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance pF Coss Output Capacitance All 16 25 pF Crss Reverse Transfer Capacitance All 5 12 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf VDD = -30 V, ID = -0.27 A, VGS = -10 V, RGEN = 50 All 12 nS All 50 nS Turn - Off Delay Time All 10 nS Turn - Off Fall Time All 25 nS A DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note 1) Drain-Source Diode Forward Voltage BSS84 -0.13 BSS110 -0.17 BSS84 -0.52 BSS110 -0.68 VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2 VGS = 0 V, IS = -0.34 A (Note 1) BSS110 -1 -1.2 A V Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics 3 -1 V GS = -3V -5.0 R DS(on) , NORMALIZED -0.8 -8.0 -6.0 -4.5 -4.0 -0.6 -3.5 -0.4 -3.0 -0.2 -2.5 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) VGS = -10V -3.5 2 .5 -4 .0 2 -4.5 -5.0 1 .5 -6 .0 -8 .0 -1 0 1 0 .5 0 -1 -2 -3 -4 V DS , DRAIN-SOURCE VOLTAGE (V) -5 -0.2 -6 I Figure 1. On-Region Characteristics -0.8 1.4 R DS(on) , NORMALIZED V GS = -10V 1.2 1 0.8 0.6 -50 VGS = -10V 2.5 T = 125C J 2 1.5 25C 1 -55C 0.5 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (C) 125 150 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 1.1 TJ = -55C 25C 125C Vth , NORMALIZED -0 .8 -0 .6 -0 .4 -0 .2 -2 -4 -6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -8 GATE-SOURCE THRESHOLD VOLTAGE -1 V DS = -10V -1 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance Variation with Temperature 0 -1 3 I D = -0.13A DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -0.4 -0.6 , DRA IN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 I D , DRAIN CURRENT (A) D V DS = V GS I D = -1m A 1.05 1 0.95 0.9 0.85 -5 0 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 1 1 .0 5 1 0.2 TJ = 1 2 5 C 0.1 25C 0.05 -55C 0.01 0.005 S 0 .9 5 0 .9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 0.001 0.2 150 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) 10 70 50 -VGS , GATE-SOURCE VOLTAGE (V) C iss 30 C oss 20 10 C rss 5 f = 1 MHz V GS = 0V 3 2 0 .1 V DS = -10V I D = -0.13A -20V 8 -40V 6 4 2 0 0 .2 0 .5 1 2 5 10 -V DS , DRA IN TO SOURCE VOLTAGE (V) 20 30 50 0 0 .5 VDD t d(on) 2 t off tr t d(off) tf 90% 90% V OUT D VOUT R GEN 1 .5 t on RL V IN 1 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics VGS 1.6 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 7. Breakdown Voltage Variation with Temperature CAPACITANCE (pF) VGS = 0V 0.5 I D = -250A -I , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1 .1 10% 10% DUT G 90% S V IN 50% 50% 10% INVERTED PULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 2 T J = -55C 1 0 .4 -I D , DRAIN CURRENT (A) 25C 0 .3 125C 0 .2 0 .1 V DS = -10V 10 0.5 RD S(O Li N) 1m t mi 10 10 0.1 0m 1s 10 0.05 V GS = -10V 0u s s ms s s DC SINGLE PULSE T A = 25C 0.01 g FS , TRANSCONDUCTANCE (SIEMENS) 0 .5 0 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 Figure 13. Transconductance Variation with Drain Current and Temperature 0.005 1 2 5 10 20 30 - V DS , DRAIN -SOURCE VOLTAGE (V) 50 80 Figure 14. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R JA (t) = r(t) * R JA o R = 3 5 0 C/ W JA 0 .1 0 .05 0 .02 P(pk) 0 .01 t1 0.01 t2 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve Note : Characterization performed using a circuit board with 175oC/W typical case-to-ambient thermal resistance. BSS84 Rev. C1 / BSS110. Rev. A2 TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION QUANTITY TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO LEADCLIP 2.0 K / BOX NO LEADCLIP 2.0 K / BOX TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION J18Z NO EOL CODE 5 Ammo boxes per Intermediate Box See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option (c)2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option "A" (H) Machine Option "E" (J) Style "A", D26Z, D70Z (s/h) Style "E", D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev. B SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape Human Readable Label These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchil d logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed Carrier Tape 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 3,000 D87Z 7" Dia 13" 187x107x183 343x343x64 Max qty per Box 24,000 30,000 Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Reel Size Box Dimension (mm) SOT-23 Unit Orientation TNR 10,000 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Note/Comments Human Readable Label sample H uman readable Label 187mm x 107mm x 183mm Intermediate Box for Standard Option SOT-23 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G