BUV48A - Power Innovations - Datasheet.Directory

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

●Rugged Triple-Diffused Planar Construction

●15 A Continuous Collector Current

●1000 Volt Blocking Capability

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base. MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

RATINGSYMBOLVALUEUNIT

Collector-emitter voltage (VBE = 0 V)BUV48

BUV48AVCES850

1000V

Collector-emitter voltage (RBE = 10 Ω)BUV48

BUV48AVCER850

1000V

Collector-emitter voltage (IB = 0)BUV48

BUV48AVCEO400

450V

Continuous collector current IC15A

Peak collector current (see Note 1)ICM30A

Continuous base current IB4A

Peak base current IBM20A

Non repetitive accidental peak surge current ICSM55A

Continuous device dissipation at (or below) 25°C case temperaturePtot125W

Operating junction temperature rangeTj-65 to +150°C

Storage temperature rangeTstg-65 to +150°C

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

VCEO(sus)Collector-emitter

sustaining voltageIC = 200 mAL = 25 mH(see Note 2)BUV48

BUV48A400

450V

ICESCollector-emitter

cut-off current

VCE= 850 V

VCE=1000 V

VCE= 850 V

VCE=1000 V

VBE=0

VBE=0TC = 125°C

TC = 125°C

BUV48

BUV48A

BUV48

BUV48A

0.2

2.0

ICERCollector-emitter

cut-off current

VCE= 850 V

VCE=1000 V

VCE= 850 V

VCE=1000 V

RBE=10 Ω

RBE=10 ΩTC = 125°C

TC = 125°C

BUV48

BUV48A

BUV48

BUV48A

0.5

4.0

IEBOEmitter cut-off

currentVEB = 5 VIC=0 1 mA

VEBOEmitter-base

breakdown voltageIE = 50 mAIC=0 7 30 V

VCE(sat)Collector-emitter

saturation voltage

IB = 2 A

IB = 3 A

IB = 1.6 A

IB = 2.4 A

IC= 10A

IC= 15A

IC= 8A

IC= 12A

(see Notes 3 and 4)

BUV48

BUV48A

1.5

5.0

1.5

5.0

VBE(sat)Base-emitter

saturation voltageIB = 2 A

IB = 1.6 AIC= 10A

IC= 8A(see Notes 3 and 4)BUV48

BUV48A1.6

1.6V

ftCurrent gain

bandwidth productVCE = 10 VIC= 0.5Af = 1 MHz10 MHz

CobOutput capacitanceVCB = 20 VIC=0f = 1 MHz150pF

thermal characteristics

PARAMETERMINTYPMAXUNIT

RθJCJunction to case thermal resistance 1 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

ton Turn on timeIC = 10 A

IB(on) = 2 AVCC = 150 V

IB(off) = -2 ABUV48

(see Figures 1 and 2)

1.0µs

tsStorage time3.0µs

tfFall time0.8µs

ton Turn on timeIC = 8 A

IB(on) = 1.6 AVCC = 150 V

IB(off) = -1.6 ABUV48A

(see Figures 1 and 2)

1.0µs

tsStorage time3.0µs

tfFall time0.8µs

inductive-load-switching characteristics at 100°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

tsv Voltage storage timeIC = 10 A

VBE(off) = -5 VIB(on) = 2 A

(see Figures 3 and 4)BUV484.0µs

tfiCurrent fall time0.4µs

tsv Voltage storage timeIC = 8 A

VBE(off) = -5 VIB(on) = 1.6 A

(see Figures 3 and 4)BUV48A4.0µs

tfiCurrent fall time0.4µs

AUGUST 1978 - REVISED MARCH 1997

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. Resistive-Load Switching Test Circuit

Figure 2. Resistive-Load Switching Waveforms

µµ

100

680 F

µµ

Vcc = 250 V

+25 V

BD135

ΩΩ

100

ΩΩ

120

ΩΩ

100

ΩΩ

BD136 680 F

µµ

TUT

tp = 20 µs

Duty cycle = 1%

= 15 V, Source Impedance = 50

Ω

VCC

90%

10%

A10%

90%

10%

90%

IB(on)

IB(off)

dIB

dt≥ 2 A/µs

A - B = td

B - C = tr

E - F = tf

D - E = ts

A - C = ton

D - F = toff

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 3. Inductive-Load Switching Test Circuit

Figure 4. Inductive-Load Switching Waveforms

RB(on)

VBE(off)

Vclamp = 400 V

vcc

µµ

180

ΩΩ

+5V

D45H11

BY205-400

2N2222

BY205-400 5X BY205-400

BY205-400

1 k

ΩΩ

1 k

ΩΩ

2N2904

D44H11

100

ΩΩ

270

ΩΩ

V Gen

+5V

1 k

ΩΩ

0.02

µµ

FTUT

1 pF 33

ΩΩ

Adjust pw to obtain IC

For IC < 6 A VCC = 50 V

For IC ≥ 6 A VCC = 100 V

Base Current

A (90%)

IB(on)

Collector Voltage

Collector Current

D (90%)

E (10%)

F (2%)

90%

10%

VCE

IC(on)

A - B = tsv

B - C = trv

D - E = tfi

E - F = tti

B - E = txo

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

B. Resistors must be noninductive types.

AUGUST 1978 - REVISED MARCH 1997

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 5. Figure 6.

Figure 7. Figure 8.

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

IC - Collector Current - A

200·1 1·0 10

hFE - Typical DC Current Gain

1·0

100 TCP765AA

VCE = 5 V TC = 125°C

TC = 25°C

TC = -65°C

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

IB - Base Current - A

0·1 1·0 10

VCE(sat) - Collector-Emitter Saturation Voltage - V

1·0

2·0

3·0

4·0

5·0 TCP765AB

IC = 5 A

IC = 10 A

IC = 15 A

TC = 25°C

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

IB - Base Current - A

0·1 1·0 10

VCE(sat) - Collector-Emitter Saturation Voltage - V

1·0

2·0

3·0

4·0

5·0 TCP765AI

TC = 100°C

IC = 5 A

IC = 10 A

IC = 15 A

BASE-EMITTER SATURATION VOLTAGE

BASE CURRENT

IB - Base Current - A

0123456

VBE(sat) - Base-Emitter Saturation Voltage - V

0·8

0·9

1·0

1·1

1·2

1·3

1·4

1·5

1·6 TCP765AC

IC = 5 A

IC = 10 A

IC = 15 A

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 9.

MAXIMUM SAFE OPERATING REGIONS

Figure 10.

COLLECTOR CUT-OFF CURRENT

CASE TEMPERATURE

TC - Case Temperature - °C

-80 -60 -40 -20 020 40 60 80 100 120 140

ICES - Collector Cut-off Current - µA

4·0

0·01

0·1

1·0

TCP765AD

BUV48A

VCE = 1000 V

BUV48

VCE = 850 V

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

VCE - Collector-Emitter Voltage - V

1·0 10 100 1000

IC - Collector Current - A

0·01

0.1

1·0

100 SAP765AA

tp = 10 µµs

tp = 50 µµs

tp = 100 µµs

tp = 500 µµs

tp = 1 ms

tp = 2 ms

DC Operation BUV48

BUV48A

AUGUST 1978 - REVISED MARCH 1997

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

SOT-93

ALL LINEAR DIMENSIONS IN MILLIMETERS

4,90

4,70

1,37

1,17

0,78

0,50

2,50 TYP.

15,2

14,7

12,2 MAX. 16,2 MAX.

18,0 TYP.

31,0 TYP.

1,30

1,10

11,1

10,8

4,1

4,0 3,95

4,15

1 2 3

NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.