© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 1
1Publication Order Number:
MMBD301M3/D
MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spinoff of our popular
SOT23 threeleaded device. It is designed primarily for
highefficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT723 surface mount package. This device is
ideal for lowpower surface mount applications where board space is
at a premium.
Features
Extremely Low Minority Carrier Lifetime 15 ps (Typ)
Very Low Capacitance 1.5 pF (Max) @ VR = 15 V
Reduces Board Space
These Devices are PbFree and Halogen Free/BFR Free
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Current (DC) IF200 (Max) mA
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
2.0
mW
mW/°C
Operating Junction Temperature Range TJ55 to +125 °C
Storage Temperature Range Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 V
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT0.9 1.5 pF
Reverse Leakage (VR = 25 V) Figure 3 IR13 200 nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4 VF0.38 0.45 Vdc
Forward Voltage (IF = 10 mAdc) Figure 4 VF0.52 0.6 Vdc
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30 VOLTS
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
Device Package Shipping
ORDERING INFORMATION
MMBD301M3T5G SOT723
(PbFree)
8000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT723
CASE 631AA
STYLE 2
AK M
AK = Specific Device Code
M = Date Code
MARKING
DIAGRAM
1
ANODE
3
CATHODE
MMBD301M3T5G
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2
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IRm
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
01020
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
TA = -40°C
TA = 85°C
TA = 25°C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
TA = 100°C
75°C
25°C
, TOTAL CAPACITANCE (pF)CT
, MINORITY CARRIER LIFETIME (ps)t
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
MMBD301M3T5G
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3
PACKAGE DIMENSIONS
SOT723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 Y
2X
E
12
3
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.523X 0.36
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MMBD301M3/D
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