7MBR50SB140 IGBT Modules IGBT MODULE (S series) 1400V / 50A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Brake t No -IC PC VCES VGES IC o c e r Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Rating 1400 20 75 50 150 100 50 360 1400 20 35 25 70 50 180 1400 1600 50 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous Tc=25C Tc=75C Tc=25C Tc=75C nd e mm ICP Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter VCES VGES IC Condition 1ms 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25C Tc=75C Tc=25C Tc=75C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V N*m 7MBR50SB140 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.4 2.8 6000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Converter IF=50A Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Turn-off time VCE=1400V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=50A VGE=15V RG=24 chip terminal IF=50A VCES=1400V, VGE=0V VCE=0V, VGE=20V IC=25A, VGE=15V chip terminal V CC =800V IC=25A VGE=15V RG=51 V R=1400V IF=50A chip terminal VR=1600V T=25C T=100C T=25/50C for nd e mm Symbol ot Thermal resistance ( 1 device ) N Contact thermal resistance o c e r * Rth(j-c) Rth(c-f) 1.0 0.3 V 3.4 0.35 1.0 0.2 465 3305 w ne Condition Min. 2.8 1.2 0.6 1.0 0.3 1.0 1.1 1.2 n. sig 5000 495 3375 pF s 1.2 0.6 2.2 2.35 0.35 0.25 0.45 0.08 de Thermal resistance Characteristics Item 0.35 0.25 0.1 0.45 0.08 2.4 2.6 mA A V V s mA V 1.5 1.0 mA 520 3450 K Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Unit 0.35 0.75 0.69 0.50 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Inverter] [Thermistor] 22(P1) 8 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev) 4(U) 14(Gb) 16(Gw) 18(Gv) 20(Gu) 13(Gx) 15(Ew) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) http://store.iiic.cc/ s mA A V 9 C/W 7MBR50SB140 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 120 120 VGE= 20V15V12V VGE= 20V 15V 12V 100 Collector current : Ic [ A ] Collector current : Ic [ A ] 100 80 10V 60 40 80 10V 60 40 20 20 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 120 5 10 Tj= 125C Collector - Emitter voltage : VCE [ V ] Tj= 25C 100 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 80 60 8 n sig ew n for 40 20 0 0 1 2 mm t No 3 4 Ic= 100A d en eco 4 r . de 6 Ic= 50A 2 Ic= 25A 0 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 1000 25 800 20 600 15 400 10 200 5 Cies Coes 1000 Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 100 200 300 Gate charge : Qg [ nC ] http://store.iiic.cc/ 400 0 500 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 7MBR50SB140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 24 ohm, Tj= 125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 24 ohm, Tj= 25C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 500 ton tr 100 tf tf 50 50 0 20 40 60 80 0 20 40 60 80 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=24 ohm 5000 20 Eon(125C) 1000 500 100 50 10 50 o c e r 100 12 10 8 6 nd t No Eon(25C) . de 14 for e m m tf 16 n sig w ne Eoff(125C) Eoff(25C) 4 Err(125C) 2 Err(25C) 0 500 0 20 40 Gate resistance : Rg [ ohm ] 60 80 100 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>24 ohm, Tj=<125C 40 120 Eon 100 30 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 18 ton toff 20 Eoff 80 60 40 10 20 Err 0 10 0 50 100 500 Gate resistance : Rg [ ohm ] 0 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1400 1600 IGBT Module 7MBR50SB140 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=24 ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) 120 300 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 100 80 60 40 20 0 trr(125C) 100 trr(25C) Irr(125C) Irr(25C) 10 0 1 2 3 4 0 20 Forward on voltage : VF [ V ] 40 60 80 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 120 Tj= 25C Tj= 125C Forward current : IF [ A ] 100 de 80 ew n for 60 40 20 0 0.0 0.4 0.8 . n sig nd e mm o c e r 1.2 t 1.6 2.0 Forward on voltage : VFM [ V ] No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 3 200 100 FWD[Inverter] IGBT[Brake] Resistance : R [ k ohm ] Thermal resistanse : Rth(j-c) [ C/W ] 1 Conv. Diode IGBT[Inverter] 0.1 0.01 0.001 0.01 0.1 1 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [ C ] Pulse width : Pw [ sec ] http://store.iiic.cc/ 7MBR50SB140 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 60 60 Collector current : Ic [ A ] 12V VGE= 20V 15V 12V 50 Collector current : Ic [ A ] VGE= 20V15V 50 40 10V 30 20 40 10V 30 20 10 10 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 10 Tj= 125C Collector - Emitter voltage : VCE [ V ] 40 30 8 n sig ew n for 20 e m m 4 nd 10 0 0 1 2 o c e r 3 4 t Ic= 50A Ic= 25A 2 Ic= 12.5A 0 5 5 10 Collector - Emitter voltage : VCE [ V ] No . de 6 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=25A, Tj= 25C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 10000 Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 50 100 150 Gate charge : Qg [ nC ] http://store.iiic.cc/ 200 0 250 Gate - Emitter voltage : VGE [ V ] Tj= 25C 50 Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] 60 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR50SB140 Outline Drawings, mm de ew n for nd e mm mass : 260g t No o c e r http://store.iiic.cc/ . n sig