BLP15M7160PY - NXP Semiconductors

1. Product profile

1.1 General description

A 160W LDMOS RF power transistor for broadcast transmitter and industrial

applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

applications.

1.2 Features and benefits

Integrated ESD protection

Excellent ruggedness

High power gain

High efficiency

Excellent reliability

Easy power control

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

Communication transmitter applications in the HF to 1500 MHz frequency range

Industrial applications in the HF to 1500 MHz frequency range

Single product Doherty applications

BLP15M7160P

Power LDMOS transistor

Rev. 5 — 8 January 2016 Product data sheet

Table 1. Typical performance

RF performance at Th = 25



C in a common source test circuit.

Test signal f VDS IDq PL(AV) PL(M) GpD

(MHz) (V) (mA) (W) (W) (dB) (%)

pulsed, class-B 860 28 100 - 160 20 62

Product data sheet Rev. 5 — 8 January 2016 2 of 11

BLP15M7160P

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

[1] Rth(j-case) is measured under RF conditions.

Table 2. Pinning

All pins must be connected for correct operation and to prevent damage to the device.

Pin Description Simplified outline Graphic symbol

1 gate 1

2 gate 2

3drain 2

4drain 1

5source [1]

pin 1 index

aaa-006617

Table 3. Ordering information

Type number Package

Name Description Version

BLP15M7160P HSOP4F plastic, heatsink small outline package; 4 leads (flat) SOT1223-2

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 6+11V

Tstg storage temperature 65 +150 C

Tjjunction temperature [1] - 225 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-case) thermal resistance from junction to case Tcase =80C; PL=160 W [1] 0.5 K/W

Product data sheet Rev. 5 — 8 January 2016 3 of 11

BLP15M7160P

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLP15M7160P is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;

f = 860 MHz at rated load power.

Table 6. DC characteristics

Tj = 25



C per section; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; I

D=0.9mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 90 mA 1.5 1.86 2.3 V

IDSS drain leakage current VGS =0 V; V

DS =28V 1.4 - +1.4 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

15 16 - A

IGSS gate leakage current VGS =11 V; V

DS = 0 V - - 140 nA

gfs forward transconductance VDS =10V; I

D=3.15A - 6 - S

RDS(on) drain-source on-state

resistance

VGS =V

GS(th) + 3.75 V;

ID=3.15A

-0.2-

Table 7. AC characteristics

Tj = 25



C per section; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Ciss input capacitance VGS =0V; V

DS =28V; f=1MHz - 79 - pF

Coss output capacitance VGS =0V; V

DS =28V; f=1MHz - 32 - pF

Crs feedback capacitance VGS =0V; V

DS =28V; f=1MHz - 1.5 - pF

Table 8. RF characteristics

Test signal: pulsed CW; f = 860 MHz; RF performance measured at VDS = 28 V; IDq = 100 mA;

Tcase =25



C; unless otherwise specified; in a class-B production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain PL(M) = 160 W 16.5 19.4 - dB

Ddrain efficiency PL(M) = 160 W 57.5 59.7 - %

Product data sheet Rev. 5 — 8 January 2016 4 of 11

BLP15M7160P

Power LDMOS transistor

7.2 Demo circuit information

Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm;

thickness copper plating = 35 m.

See Table 9 for a list of components.

Fig 1. Component layout for class-AB production test circuit

Table 9. List of components

For test circuit see Figure 1.

Component Description Value Remarks

C1, C2 multilayer ceramic chip capacitor 5.6 pF ATC800B

C4, C5 multilayer ceramic chip capacitor 4.7 pF ATC800B

C9 multilayer ceramic chip capacitor 100 pF ATC180R

C10, C11 multilayer ceramic chip capacitor 10 pF ATC800B

C12, C13 multilayer ceramic chip capacitor 100 pF ATC180R

C14, C15 multilayer ceramic chip capacitor 4.7 F, 50 V T DK

C16, C17 multilayer ceramic chip capacitor 100 pF ATC800B

C18, C19 multilayer ceramic chip capacitor 10 FTDK

C20, C21 electrolytic capacitor 470 F, 63 V

C22, C23 multilayer ceramic chip capacitor 1 nF ATC800B

C30 multilayer ceramic chip capacitor 33 pF ATC800A

C31 multilayer ceramic chip capacitor 10 pF ATC800A

C32 multilayer ceramic chip capacitor 11 pF ATC800A

C33, C34, C35 multilayer ceramic chip capacitor 91 pF ATC800A

C36, C37 electrolytic capacitor 4.7 F, 50 V

T1 semi rigid coax 25 Micro-Coax UT-090C-25

T2 semi rigid coax 25 Micro-Coax UT-090C-25

R1, R2 resistor 10 Vishay MRS25

R3, R4 resistor 5.6 SMD 1206

R5, R6 resistor 100 Vishay MRS25

R7, R8 potentiometer 10 kBourns

35 mm 60 mm

C35

C34

C33

C37

C36

C30 C32

C31

C22

C23

aaa-010486

C20

C21

C16

C17

C10

C11

C2C1

C19

C18

C15

C14

C13

C12

Product data sheet Rev. 5 — 8 January 2016 5 of 11

BLP15M7160P

Power LDMOS transistor

7.3 Graphical data

7.3.1 1-Tone pulsed

VDS = 28 V; IDq = 200 mA; f = 860 MHz.

Fig 2. Power gain and drain efficiency as function of output power; typical values

VDS = 28 V; f = 860 MHz.

(1) IDq =50mA

(2) IDq = 100 mA

(3) IDq = 200 mA

(4) IDq = 400 mA

(5) IDq = 600 mA

(6) IDq = 800 mA

VDS = 28 V; f = 860 MHz.

(1) IDq =50mA

(2) IDq = 100 mA

(3) IDq = 200 mA

(4) IDq = 400 mA

(5) IDq = 600 mA

(6) IDq = 800 mA

Fig 3. Power gain as a function of output power;

typical values

Fig 4. Drain efficiency as a function of output power;

typical values

aaa-010435

0 40 80 120 160 200 240

16 0

18 20

20 40

22 60

24 80

PL (W)

(dB)(dB)(dB)

ηD

(%)(%)(%)

ηD

aaa-010436

0 40 80 120 160 200 240

PL (W)

(dB)(dB)(dB)

(6)(6)(6)

(5)(5)(5)

(4)(4)(4)

(3)(3)(3)

(2)(2)(2)

(1)(1)(1)

aaa-010437

0 40 80 120 160 200 240

PL (W)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

(4)(4)(4)

(5)(5)(5)

(6)(6)(6)

Product data sheet Rev. 5 — 8 January 2016 6 of 11

BLP15M7160P

Power LDMOS transistor

IDq = 200 mA; f = 860 MHz.

(1) VDS =16V

(2) VDS =18V

(3) VDS =20V

(4) VDS =22V

(5) VDS =24V

(6) VDS =26V

(7) VDS =28V

(8) VDS =30V

IDq = 200 mA; f = 860 MHz.

(1) VDS =16V

(2) VDS =18V

(3) VDS =20V

(4) VDS =22V

(5) VDS =24V

(6) VDS =26V

(7) VDS =28V

(8) VDS =30V

Fig 5. Power gain as a function of output power;

typical values

Fig 6. Drain efficiency as a function of output power;

typical values

aaa-010438

0 40 80 120 160 200 240

PL (W)

(dB)(dB)(dB)

(1)(1)(1) (2)

(2)(2) (3)

(3)(3)

(4)

(4)(4) (5)

(5)(5) (6)

(6)(6) (7)

(7)(7) (8)

(8)(8)

aaa-010439

0 40 80 120 160 200 240

PL (W)

ηD

(%)(%)(%) (1)(1)(1) (2)

(2)(2) (3)

(3)(3) (4)

(4)(4) (5)

(5)(5) (6)

(6)(6) (7)

(7)(7) (8)

(8)(8)

Product data sheet Rev. 5 — 8 January 2016 7 of 11

BLP15M7160P

Power LDMOS transistor

8. Package outline

Fig 7. Package outline SOT1223-2 (HSOP4F)

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1223-2

sot1223-2_po

15-01-12

15-06-04

Unit

max

nom

min

3.9 0.2 3.90 0.27 20.62 19.00

9.96 8.13 8.85

Dimensions (mm are the original dimensions)

HSOP4F: plastic, heatsink small outline package; 4 leads(flat) SOT1223-2

A1A2

3.65

bcD

(1) D1D2

16.00

E(1) E1E2

5.84

8.45

10.01 8.1816.05 5.89

e2e3

0.1 3.85 0.22 20.57 18.95 4.07 0.43.60 9.55 2.97

e4F

9.91 8.0815.95

20.39

20.44

20.34 5.79

9.78

9.83

9.730 3.80 0.17 20.52 18.903.55

1.62

0.25

0.1

1.57 0.25

1.52

15.96

16.16

15.76

0 10 mm

scale

detail X

D E

D3E3

E1A2

A1Q1

B A

wBb

pin 1 index

F (4x)

Note

1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.

2. Lead width dimension “b does not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.

(8x) METAL

PROTRUSIONS (SOURCE)

(2x)

Product data sheet Rev. 5 — 8 January 2016 8 of 11

BLP15M7160P

Power LDMOS transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

CW Continuous Wave

ESD ElectroStatic Discharge

HF High Frequency

LDMOS Laterally Diffused Metal-Oxide Semiconductor

MTF Median Time to Failure

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLP15M7160P v.5 20160108 Product data sheet - BLP15M7160P v.4

Modifications •Table 3 on page 2: table updated

•Figure 7 on page 7: package outline changed from SOT1223-1 to SOT1223-2

BLP15M7160P v.4 20150901 Product data sheet - BLP15M7160P v.3

BLP15M7160P v.3 20150209 Product data sheet - BLP15M7160P v.2

BLP15M7160P v.2 20140610 Product data sheet - BLP15M7160P v.1

BLP15M7160P v.1 20140110 Objective data sheet - -

Product data sheet Rev. 5 — 8 January 2016 9 of 11

BLP15M7160P

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

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Limited warranty and liability — Information in this document is believed to

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Notwithstanding any damages that customer might incur for any reason

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information published in this document, including without limitation

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such equipment or applications and therefore such inclusion and/or use is at

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Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

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planned application and use of customer’s third party customer(s). Customers

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risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

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customer’s applications and products using Ampleon products in order to

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liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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subject to the general terms and conditions of commercial sale, as published

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 8 January 2016 10 of 11

BLP15M7160P

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

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In the event that customer uses the product for design-in and use in

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13. Contact information

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

BLP15M7160P

Power LDMOS transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 8 January 2016

Document identifier: BLP15M7160P

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

7.2 Demo circuit information. . . . . . . . . . . . . . . . . . 4

7.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.3.1 1-Tone pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Handling information. . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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