Phitips Semiconductors Product specification Schottky barrier (double) diodes BAS40W series FEATURES PINNING e Low forward voltage BAS40 e Guard ring protected PIN w | -o4w | -osw | -oew 3 Very small SMD package 1 a a; a, ky e Low diode capacitance. 2 ne Kp ap kp i 2 3 ky | ky, @2 | Kt, Ke | ay, aa MLCa58 APPLICATIONS e Ultra high-speed switching Fig.3 BAS40-04W diode Voltage clamping 3 configuration (symbol). Protection circuits e Blocking diodes. 3 DESCRIPTION Planar Schottky barrier diodes 1 1 -Coslie)- 2 encapsulated in a SOT323 very small Top view wace7o plastic SMD package. Single diodes and double diodes with different pinning are available. Fig.1 Simplified outline MARKING MARKING TYPE NUMBER CODE BAS40W 63 BAS40-04W 64 BAS40-05W 65 BAS40-06W 66 1996 Sep 20 Fig.2 BAS4OW single diode configuration (symbol). (SOT323) and pin Fig.4 BAS40-05W diode configuration. configuration (symbol). 3 3 2 MLC357 MLC360 Fig.5. BAS40-06W diode configuration (symbol). Philios Semiconductors Product specification Schottky barrier (double) diodes BAS40W series LIMITING VALUES in accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Ve continuous reverse voltage - 40 Vv lr continuous forward current - 120 mA lcRM repetitive peak forward current tpsis, 650.5 - 120 mA lesm non-repetitive peak forward current tp < 10 ms - 200 mA Tstg storage temperature 65 +150 (C T junction temperature - 150 C Tamb operating ambient temperature ~65 +150 [C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve continuous forward voltage see Fig.6 le=1mA 380 mV I-=10mA 500 mV IF=15mA 1 v ln continuous reverse current Vr = 30 V; note 1; see Fig.7 1 pA Vr = 40 V; note 1; see Fig.7 10 pA t charge carrier life time lp = 5 mA; Krakauer method 100 ps Cg diode capacitance VR =0V; f=1MHz; see Fig.9 |5 pF Note 1. Pulsed test: t, = 300 1s; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rthj-a thermal resistance from junction to ambient | note 1 625 K/W Note 1. Refer to SOT323 standard mounting conditions. 1996 Sep 20 2-21 Philips Semiconductors Product-specification Schottky barrier (double) diodes BAS40W series GRAPHICAL DATA (2) (@) 0 0.2 0.4 0.6 08 1.0 a) (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tams = 25C. (4) Tamb = ~40 C. Fig.6 Forward current as a function of forward voltage; typical values. 0 10 20 Vay) 30 (1) Tamp = 150 C. (2) Tamb = 85 C. (3) Tamp = 25 C. Fig.7 Reverse current as a function of reverse voltage; typical values. 103 diff (Q) 1 2 10! 1 10 10' Ig (mA) f = 10 KHz. Fig.8 Differential forward resistance as a function of forward current; typical values. MLC363 9 10 20 Va {V) 30 f= 1 MHz: Tamy = 25 C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 20