VUO 35 IdAVM = 38 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRRM VRSM V V 800 1200 1400 1600 1800 900 1300 1500 1700 1900 + + Type - ~ ~ ~ VUO 35-08NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* ~ - ~ ~ * delivery time on request Symbol Conditions IdAVM TC = 85C, module IFSM TVJ = 45C VR = 0 I2t Maximum Ratings 38 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 440 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 810 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 650 670 A2 s A2 s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 1.5 15% 13 15% 1.5 15% 13 15% Nm lb.in. Nm lb.in. 135 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M4) Terminal connection torque (M4) Weight typ. Symbol Conditions IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM 0.3 5.0 mA mA VF IF TVJ = 25C 2.2 V VT0 rT For power-loss calculations only 0.85 12 V m RthJC per diode; DC current per module per diode; DC current per module 4.2 0.7 4.8 0.8 K/W K/W K/W K/W RthJH = 150 A Features * * * * * * Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 Applications * * * * Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values IXYS reserves the right to change limits, test conditions and dimensions. (c) 2006 IXYS All rights reserved 0610 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 1-2 VUO 35 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 I2t versus time (1-10 ms) per diode Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i Rthi (K/W) 1 2 3 4 0.194 0.556 0.45 3.0 ti (s) 0.024 0.07 3.25 9.3 Constants for ZthJK calculation: (c) 2006 IXYS All rights reserved Rthi (K/W) 1 2 3 4 0.194 0.556 0.45 3.0 ti (s) 0.024 0.07 3.25 9.3 0610 Fig. 6 Transient thermal impedance per diode IXYS reserves the right to change limits, test conditions and dimensions. i 2-2