© 2006 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
0610
VUO 35
IdAVM = 38 A
VRRM = 800-1800 V
VRRMVRSMType
VV
800 900 VUO 35-08NO7
1200 1300 VUO 35-12NO7
1400 1500 VUO 35-14NO7
1600 1700 VUO 35-16NO7
1800 1900 VUO 35-18NO7*
* delivery time on request
Symbol Conditions Maximum Ratings
IdAVM TC = 85°C, module 38 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 440 A
TVJ = TVJM t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 810 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 650 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 670 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M4) 1.5 ±15% Nm
13 ±15% lb.in.
Terminal connection torque (M4) 1.5 ±15% Nm
13 ±15% lb.in.
Weight typ. 135 g
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Symbol Conditions Characteristic Values
IRVR= VRRM TVJ = 25°C≤0.3 mA
VR= VRRM TVJ = TVJM ≤5.0 mA
VFIF= 150 A TVJ = 25°C≤2.2 V
VT0 For power-loss calculations only 0.85 V
rT12 mΩ
RthJC per diode; DC current 4.2 K/W
per module 0.7 K/W
RthJH per diode; DC current 4.8 K/W
per module 0.8 K/W
Dimensions in mm (1 mm = 0.0394")
Three Phase
Rectifier Bridge
~
~
~
–
++
-
~
~
~
© 2006 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
0610
VUO 35
Fig. 6 Transient thermal impedance per diode
Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms)
voltage drop per diode IFSM: Crest value. t: duration per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 0.45 3.25
4 3.0 9.3
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 0.45 3.25
4 3.0 9.3
I2t
