6-Pack High Power
MOSFET Module
100 Amperes/75 Volts
FM200TU-07A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
17/12 Rev. 1
Description:
Powerex MOSFET Modules are
designed for use in low voltage
switching applications. Each
module consists of 6 MOSFET
switches with low Rds(on) and a
fast recovery body diode to yield
low loss. All components and
interconnects are isolated from
the heat sink baseplate. This
offers simplified system assembly
and thermal management.
Features:
£ Low ESW(off) and Low Rds(on)
£ Super-Fast Recovery Free-
Wheel Diode
£ Thermistor for TC Sensing
£ Parallel Legs to make a Dual
Module at 3X the Rating
£ Positive Locking Connectors
£ Easy Bus Bar Layout Due to
Flow Through Power Design
Applications:
£ Forklift
£ Off road Electric Vehicle
£ Welder
£ UPS
£ Chopper
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
FM200TU-07A is a 75V (VDSS),
100 Ampere 6-Pack High Power
MOSFET Module.
Type Current Rating VDSS
Amperes Volts
FM 100 75
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.54 90.0
C 1.38 35.0
D 3.82 97.0
E 3.15 80.0
F 3.27 83.0
G 0.26 6.5
H 0.48 12.0
J 0.51 12.9
K 0.65 16.5
L 0.63 16.0
M 1.26 32.0
N 0.35 8.8
P 0.45 11.5
Q 0.16 4.0
Dimensions Inches Millimeters
R 0.79 20.0
S 1.50 38.0
T 2.64 67.0
U 1.02 26.0
V 0.98 25.0
W 0.36 9.1
X Dia. 0.25 Dia. 6.5
Y Rad. 0.25 Rad. 6.5
Z 0.57 14.5
AA 0.55 14.0
AB 1.18 30.0
AC 0.69 17.5
AD 0.47 12.0
AE 0.61 15.5
AF 0.18 4.5
(8) GVP
(2) SVP
(11) GVN
(5) SVN
(9) GWP
(3) SWP
(12) GWN
(6) SWN
(7) GUP
(1) SUP
(10) GUN
(4) SUN
V W
(13)
(14)
P
N
U
14 TH2
11 G VN
8 GVP
2 SVP
6 SWN
5 SVN
3 SWP
7 GUP
9 GWP
10 GUN
12 GWN
1 SUP
4 SUN
13 TH1
TERMINAL CODE
113
14
6
7
U V W
N
P
12
A
D
F
M
W
AEAD
AA AA
Z Z Z
AF
LLK
B E T
Q
Q
CU V
K M M X
Y
P
S
R
G
G
J
H
N
X (11 PLACES)
TC
MEASURED
POINT
AB
A
Housing Type
Tyco Electronics P/N
A: 917354-1
B: 177898-1
B
C
U
V
AB
AB AC Z
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
27/12 Rev. 1
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol FM200TU-07A Units
Channel Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Drain-Source Voltage (G-S Short) VDSS 75 Volts
Gate-Source Voltage (D-E Short) VGSS ±20 Volts
Drain Current (TC = 25°C) ID(rms) 100 Arms
Peak Drain Current (Pulse) IDM 200* Amperes
Avalanche Current (L = 10µH, Pulse) IDA 100* Amperes
Source Current (TC = 25°C)** IS(rms) 100 Arms
Peak Source Current (Pulse)** ISM 200* Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 150°C)*** PD 410 Watts
Maximum Peak Power Dissipation (TC' = 25°C, Tj < 150°C)*** PD 560 Watts
Mounting Torque, M6 Main Terminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 600 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Drain-Cutoff Current IDSS VDS = VDSS, VGS = 0V — — 1.0 mA
Gate-Source Threshold Voltage VGS(th) ID = 10mA, VDS = 10V 4.7 6.0 7.3 Volts
Gate Leakage Current IGSS VGS = VGSS, VDS = 0V — — 1.5 µA
Static Drain-Source On-State Resistance rDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 1.2 1.65 mΩ
(Chip) ID = 100A, VGS = 15V, Tj = 125°C — 1.92 — mΩ
Static Drain-Source On-State Voltage VDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 0.12 0.165 Volts
(Chip) ID = 100A, VGS = 15V, Tj = 125°C — 0.192 — Volts
Lead Resistance Rlead ID = 100A, Terminal-Chip, Tj = 25°C — 1.2 — mΩ
ID = 100A, Terminal-Chip, Tj = 125°C — 1.68 — mΩ
Input Capacitance Ciss — — 50 nF
Output Capacitance Coss VDS = 10V, VGS = 0V — — 7 nF
Reverse Transfer Capacitance Crss — — 4 nF
Total Gate Charge QG VDD = 48V, ID = 100A, VGS = 15V — 700 — nC
Inductive Turn-on Delay Time td(on) — — 450 ns
Load Rise Time tr VDD = 48V, ID = 100A, — — 400 ns
Switch Turn-off Delay Time td(off) VGS1 = VGS2 = 15V, RG = 13Ω, — — 600 ns
Time Fall Time tf Inductive Load Switching Operation, — — 400 ns
Diode Reverse Recovery Time** trr IS = 100A — — 200 ns
Diode Reverse Recovery Charge** Qrr — 2.0 — µC
Source-Drain Voltage VSD IS = 100A, VGS = 0V — — 1.3 Volts
* Pulse width and repetition rate should be such that device channel temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
***TC' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
37/12 Rev. 1
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Channel to Case Rth(j-c) MOSFET part (1/6 Module) — — 0.30 °C/W
TC Reference Point per Outline Drawing
Thermal Resistance, Channel to Case Rth(j-c') MOSFET part (1/6 Module) — — 0.22 °C/W
Measured Point is Just Under the Chips.
Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — 0.1 — °C/W
Thermistors Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Resistance* Rth TC = 25°C — 100 — kΩ
B Constant* B Resistance at 25°C, 50°C — 4000 — K
*B = (InR1 – InR2) / (1/T1 – 1/T2)
R1: Resistance at T1(K),
R2: Resistance at T2(K)
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
CAPA CITANCE, Cies, Coes, Crss, (nF)
10-1 100101102
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SOURCE-DRAIN VOLTAGE, VSD, VOLTS)
SOURCE CURRENT, IS, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL - INVERTER PART)
01.00.80.60.40.2
103
102
101
VGS = 0V
Tj = 25°C
Tj = 125oC
GATE-SOURCE VOLTAGE, VGS, (VOLTS)
DRAIN-SOURCE ON-STATE VOLTAGE,
VDS(ON), (VOLTS)
DRAIN-SOURCE ON-STATE VOLTAGE
VS. GATE BIAS CHARACTERISTICS
(TYPICAL )
02
0
Tj = 25°C
ID = 200A
ID = 100A
ID = 50A
15105
515139711
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
15
Tj = 25°C
12
10
9
GATE-SOURCE, VGS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
VDS = 10V
Tj = 25°C
Tj = 125oC
VGS = 0V
Ciss
trr
Irr
Coss
Crss
150
50
0
100
200
100
50
150
0
200
0.75
0.25
0
0.50
1. 00
0.50.91.00.80.70.6
102
101
100
SOURCE CURRENT, IS, (AMPERES)
REVERSE RECOVERY CURRENT, trr, Irr, (ns)
101102103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VDD = 48V
VGS = ±15V
RG = 13Ω
Tj = 25°C
INDUCTIVE LOAD
103
102
101
100
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
47/12 Rev. 1
101102103
101
DRAIN CURRENT, ID, (AMPERES)
SWITCHING TIMES, (ns)
SWITCHING TIME VS. DRAIN CURRENT
(TYPICAL )
102
103
VDD = 48V
VGS = ±15V
RG = 13Ω
Tj = 125°C
INDUCTIVE LOAD
GATE CHARGE, QG, (nC)
GATE-SOURCE VOLTAGE, VGS, (VOLTS)
GATE CHARGE CHARACTERISTICS
(TYPICAL )
0 750 1000
ID = 100A
500250
15
5
0
10
20
CHANNEL TEMPERATURE, Tj, (°C)
GATE-THRESHOLD VOLTAGE, VGS(th), (VOLTS)
GATE THRESHOLD VOLTAGE
VS. TEMPERATURE (TYPICAL )
0 100 160120 140
VGS = 10V
ID = 10mA
80604020
6
5
2
1
0
4
3
7
0 100 160120 14080604020
2.0
0.5
0
1. 5
1. 0
2.5
CHANNEL TEMPERATURE, Tj, (°C)
DRAIN-SOURCE ON-STATE RESISTANCE,
rDS(ON), (mΩ)
DRAIN-SOURCE ON-STATE RESISTANCE
VS. TEMPERATURE (TYPICAL )
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Single Pulse
TC = 25°C
td(on)
td(off)
tr
tf
VDD = 24V
VDD = 48V
ID = 100A
VGS = 12V
VGS = 15V
DRAIN CURRENT, ID, (AMPERES)
SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE)
101102103
SWITCHING LOSS VS. DRAIN CURRENT
(TYPICAL)
101
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, (ns)
SWITCHING TIME VS. GATE RESISTANCE
(TYPICAL )
102
103
104
101
100
10-1
10-2
VDD = 48V
VGS = ±15V
RG = 13Ω
Tj = 125°C
INDUCTIVE LOAD
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE)
020406080 100 120 140 020406080 100 120 140
SWITCHING LOSS VS. GATE RESISTANCE
(TYPICAL)
102
101
100
10-1
10-2
VDD = 48V
VGS = ±15V
ID = 100A
Tj = 125°C
INDUCTIVE LOAD
VDD = 48V
VGS = ±15V
ID = 100A
Tj = 125°C
INDUCTIVE LOAD
ESW(off)
ESW(on)
Err
ESW(off)
ESW(on)
td(on)
td(off)
tr
tf
Err