BD242, BD242A, BD242B, BD242C NOTES: 1. This value applies when the base-emitter diode is open-circuited. 2. This value applies for ty, S0.3 ms, duty cycle S 10 %. 3. Derate linearly to 150 C case temperature at the rate of 0.32 W/9C. 4, Derate linearly to 150 C free-air temperature at the end of 16 mw/C. 5 1271 FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD241A-C 40 W at 25 C Case Temperature e 3A Rated Collector Current e Min fy of 3 MHz at 10 V, 500 mA mechanical data 14,4 1 0.5| = ! i ca 8 v A I a | Emitter ' ~ 60--} Collector % ' 2 ces Base ts 0.05 thick Hh | a 7 f 180 peo 185 +7 10+08 a 3.80 - 0,05 =! ~oe 312 -0,05- = ~N rmax O1 ty -#16,92 40,0 - -Ot All dimensions are in mm TO-66P absolute maximum ratings at 25 C case temperature (unless otherwise noted) BD242 BD242A 6D242B BD242Cc Collector-Emitter Voltage (Rag = 100 2) 56 V ~70V -90V -115V Collector-Emitter Voltage (See Note 1} ~45V 60 V 80V ~100 V Emitter-Base Voltage < -5V > Continuous Collector Current < -3A ~ Peak Collector Current (See Note 2} < -5A > Continuous Base Current . . <- -1A > Safe Operating Region at (or below) 25 oC Case Temperature : < See Figure 5 > Continuous Device Dissipation at {or below) 25 C Case Temperature (See Note 3) . . < 40 Ww > Continuous Device Dissipation at (or below] 25 oc Free-Air Temperature (See Note 4) . : - 2W > Unclamped Inductive Load Energy (See Note 5) < 32 mJ > Operating Collector Junction Temperature Range . - ~65 C to 150 OC > Storage Temperature Range : < 65 C to 150 OC > Lead Temperature 1/8 Inch from Case for 5 Seconds : < 250 0 > . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2. L = 20 MH, Rap = 100 Q, Vep2 = 0 V, Rg = 0.1 22, Veg = 10 V. Energy Ig2L/2. PRELIMINARY DATA SHEET: Supplementary data may be published at a later date. TEXAS INSTRUMENTS 2-35BD242, BD242A, BD242B, BD242C electrical characteristics at 25 C case temperature BD242 BD242A 6D2428 BD242C PB, ARAMETER TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNIT V{BRICEO ' = 30 mA, |p =0, 45 ~60 -80 ~100 v See Note 6 lcEO VcE=30V, Ig =0 0.3 -0.3 mA Vee = ~60V, Ig =0 0.3 0.3 Ices VcE=-45V, Vee =0 0.2 VceE=~60V, VBE =0 ~0.2 mA VcE = ~80 V, Vee z0 0.2 Vee =-100V, Vee =90 0,2 lEBo Veg=-5V, Ig =0 1 1 1 =1 mA hee VcE=-4V, Ie=-1A, 25 25 25 25 See Notes 6 and 7 Voce =-4V, Ic =-3 A, 10 10 10 10 See Notes 6 and 7 VBE Vce=-4V, Ic =-3 A, -1.8 1.8 -18 -18 V . See Notes 6 and 7 VCE (sat) ig=-600mA, IG = =3 A, 1.2 1.2 1.2 -1.2 Vv See Notes 6 and 7 hte Voce =10V, Ic =0.5 A, 20 20 20 20 f=1kHz Ihtel Vee = ~10V, Ic =-0.5 A, 3 3 3 3 f= 1 MHz NOTES: 6. These parameters must be measured using pulse techniques. ty, = 300 Ms, duty cycle S2%. 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MAX UNIT Rasc Junction-to-Case Thermal Resistance 3.125 oc/w Rasa Junction-to-Free-Air Thermal Resistance 62.5 . switching characteristics at 25 C case temperature PARAMETER TEST CONDISTIONS + TYP UNIT ton Ic =-1A, ig(1} = 100 mA, tg(a) = 100 mA, 0.2 Bs tott VBE(off) =3-7V. RL = 20, See Figure 1 0.3 + Voitage and current values shown are nominal; exact values vary slightly with transistor parameters. 2-36 TEXAS INSTRUMENTSBD242, BD242A, BD242B, BD242C oy INPUT E INPUT gag OUTPUT wk / 90% zon 164 I i aa 1 ton bf tett 90% ! ! OUTPUT 10% TEST CIRCUIT VOLTAGE WAVEFORMS Monitor Yee Moni oe tw24ms 1 1 (gee Note B) Input 5-- Voltage 0 t Cottector Current -10V Collector Voltage V(er}CER-- VOLTAGE ANO CURRENT WAVEFORMS TEST CIRCUIT = 25C max. safe operating area -10 A OC-Operation tp = 30 ps; d =10% Prot tc |tp= I ms;d 210% tp: 10ms;d = 10% -O1 242 242A 242B 8D242 -0,01 0 2 80si75SC=CtCSC*dS "TSO I 10 -100 V Voe__> Te TEXAS INSTRUMENTS 2-37BD242, BD242A, BD242B, BD242C YoER =i (Ree); Ic: 30mA ARE flo); Vee: 4V BD242C 00 110 -100 VoER neg 100 -90 -80 -70 50 -60 -50 -40 20 10 102 103 104 Q 108 . Rag > VoE (sat) =f (Ig) VBE=f (Ic) -10 10 v low -09 / ve Vee / CE (sat) -1 fi -08 / 4 -07 A 1 -0) Wr La Ln -06 -0,01 -05 -0) l 10 100 mA -1000 -001 01 ho A Ip Ic ee ol TEXAS I N ST R U M E N TS Tl cannot assume any responsibility for any circuits shown 2-38 or represent that they are free from patent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY T IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT FOsSI3-4 SILIZIUM-KOMPLEMENTARE-LEISTUNGSTRANSISTOREN (Allgemeine und NF-Anwendungen) SILICON COMPLEMENTARY POWER TRANSISTORS (General and Low-frequency Applications) Prot @ Typ To = 25 C VCEO lcp hee @ Ic type (100 C) min max min max NPN PNP Ww A A BD 239 BD 240 30 45 2 40 0,2 BD 239A BD 240A 30 60 2 40 0,2 BD 239 B BD 240B 30 80 2 40 0,2 BD 239 C BD 240C 30 100 2 40 0,2 BD 241 BD 242 40 45 3 25 1 BD 241A BD 242A 40 60 3 25 1 BD 241B BD 2428 40 80 3 25 1 BD 241C BD 242C 40 100 3 25 1 BD 243 BD 244 65 45 6 30 9,3 BD 243A BD 244A 65 60 6 30 0,3 BD 2438 BD 244B 65 80 6 30 0,3 BD 243 C BD 244C 65 100 6 30 0,3 BD 245 BD 246 80 45 10 40 1 BD 245A BD 246A 80 60 10 40 1 BD 2458 BD 246B 80 80 10 40 1 BD 245C BD 246C 80 100 10 40 1 BD 249 BD 250 125 45 25 25 1,5 BD 249A BD 250A 125 60 25 25 1,5 BD 249 B 8D 250B 125 80 25 25 15 BD 249C BD 250C 125 100 25 25 1,5 TIP 29 TIP 30 30 40 1 40 200 0,2 TIP 29A TIP 30A 30 60 1 40 200 0,2 TIP 29B TIP 308 30 80 1 40 200 0,2 TIP 29C Tip 30C 30 100 1 40 200 0,2 TIP 31 TIP 32 40 40 3 25 100 1 TIP31A TIP 32 A 40 60 3 25 100 1 TIP 31B TIP 32B 40 80 3 25 100 1 TIP 31C TIP 32C 40 100 3 25 100 1 TIP 33 TIP 34 80 40 10 40 125 1 TIP 33 A TIP 34A 80 60 10 40 125 1 TIP 33 B TIP 348 80 80 10 40 125 1 TIP 33.6 TIP 34 80 100 10 40 125 1 TAP 35 TIP 36 90 40 25 25 100 1,5 TIP 35A TIP 386A 90 60 25 25 100 15 TEXAS INSTRUMENTSfr Ices @ VCE Gehause Anwendungen, Bemerkungen mn (IcEQ} package applications, remarks Mz HA Vv TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P Verstarker, Schalter TO-66P amplifier, switch TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 3 200 40 TO-66P Verstarker, Schalter, komplementar zu TIP 30 amplifier, switch, complementary to TIP 30 3 200 60 TO-66P Verstarker, Schaiter, komplementar zu TIP 30 A amplifier, switch, complementary to TIP 30 A 3 200 80 TO-66P Verstarker, Schalter, komplementar zu TIP 30 B amplifier, switch, complementary to TIP 30 B 3 200 100 TO-66P Verstarker, Schalter, komplementar zu TIP 30 C amplifier, switch, complementary to TIP 30 C 3 300 40 TO-66P Verstarker, Schalter, komplementar zu TIP 32 amplifier, switch, complementary to TIP 32 3 300 60 TO-3P Verstarker, Schalter, komplementar zu TIP 32 A amplifier, switch, complementary to TIP 32 A 3 300 80 TO-3P Verstarker, Schalter, komplementar zu TIP 32 B amplifier, switch, complementary to TIP 32 B 3 300 100 TO-3P Verstarker, Schalter, komplementar zu TIP 32 C amplifier, switch, complementary to TIP 32 C 3 400 40 TO-3P Verstarker, Schalter, komplementar zu TIP 34 amplifier, switch, complementary to TIP 34 3 400 60 TO-3P Verstarker, Schalter, komplementar zu TIP 34 A amplifier, switch, complementary to TIP 34 A 3 400 80 TO-3P Verstarker, Schalter, komplementar zu TIP 34 B amplifier, switch, complementary to TIP 34 B 3 400 100 TO-3P Verstarker, Schalter, komplementar zu TIP 34 C amplifier, switch, complementary to TIP 34 C 3 700 40 TO-3P Verstarker, Schalter, komplementar zu TIP 36 amplifier, switch, complementary to TIP 36 3 700 60 TO-3P Verstarker, Schalter, komplementar zu TIP 36 A amplifier, switch, complementary to TIP 36 A TEXAS INSTRUMENTS 3-5Typ f Vcc Pin Pout BVcBO BVCEQ Gehause type MHz package 2N 5713 150 13 3,4 11 60 40 TO-128 2N 5773 400 28 0,12 15 65 35 TO-117 2N 5774 400 26 1 8 65 35 TO-129 2N 5848 50 12,5 3,25 20 48 24 145 Prot @ Typ Te = 25 0C VCEO Iep here @-sIe type (100 C) min max min max PNP NPN w Vv A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 65 60 1 40 160 0,15 BD 140 BD 139 65 80 1 40 160 0,15 BD 240 BD 239 30 45 2 40 0,2 BD 240A BD 239A 30 --60 2 40 0,2 BD 2408 BD 239 B 30 -80 -2 40 02 BD 240C BD 239C 30 100 ~2 40 0,2 BD 242 BD 241 40 45 -3 25 1 BD 242A BD 241A 40 ~60 ~3 25 1 BD 242B BD 241B 40 80 -3 25 1 BD 242C BD 241C 40 100 3 25 1 BD 244 BD 243 65 45 6 30 0,3 BD 244A BD 243A 65 60 6 30 0,3 BD 244B BD 2438 65 80 -6 30 0,3 BD 244C BD 243C 65 100 6 30 0,3 BD 246 BD 245 80 45 10 40 1 BD 246A BD 245A 80 60 10 40 1 BD 246 B BD 2458 80 --80 ~10 40 1 BD 246C BD 245C 80 100 --10 40 1 BD 250 BD 249 125 45 25 25 1,5 BD 250A BD 249A 125 60 25 25 15 BD 2508 BD 2498 125 80 --25 25 1,5 BO 250C BD 249C 125 100 25 25 1,5 BDX 14 30 ~60 3 25 100 0,5 BDX 15 117 70 10 20 70 4 3-14 TEXAS INSTRUMENTSTyp type 2N 5941 2N 5942 2N 5943 MHz 30 250 Vcc 28 28 1 Pin Pout BVcBO BVCcEO Gehause package 40PEP 65 35 DIA-4L 80PEP 65 35 DIA-4L 50 mA 7dB 40 30 TO-39 trin WHz Ices @ VCE (IcEO) uA Vv Gehause package SOT-32 SOT-32 SOT-32 TO-66P TO-66P TO-66P TO-S6P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 08 08 TO-66 TO-3 Anwendungen, Bemerkungen applications, remarks Prot = Tc 65 C Verstarker und Schalter amplifier and switch Schaiter, Verstarker, komplementar 2N 3054 Schalter, Verstarker, komplementar 2N 3055 TEXAS INSTRUMENTS 3-15