nom LI OND AMER PHILIPS/DISCRETE OLE D MM 6653931 0011095 4 = ee " BYoUS \\ 50 T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E,H.T. rectifier diode in a glass envelope intended for use in high-voltage applications such as multi- pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because of the smallness of the envelope, the diodes should be used in a suitable insulating medium (resin, oil or special arrange- ments in test-cases), QUICK REFERENCE DATA Working reverse voltage Vraw max. 11,5 kV Repetitive peak reverse voltage VRRM_ max. 15 kV Average forward current IF(AV) max. 4 mA Junction temperature Tj max. 120 C Reverse recovery charge O, < 1 nc Reverse recovery time ter typ. 0,2 us MECHANICAL DATA Dimensions in mm Fig. 1 SOD-61. L=min. 29; G = max. 8,2. 25 |" 0,65 | _s K max ro oc L | G | L 3 7275833.4 The cathode is indicated by a purple band on the lead. July 1986 113 ee - ae -- N AMER PHILIPS/DISCRETE ObE D Mm b&5393) 0011050 L = SS ag me == a a BY509 J L 7-03-09 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Working reverse voltage VRw max, 11,5 kV Repetitive peak reverse voltage VRRM max. 12,5 kV Repetitive peak reverse voltage; t= 1 min; Tamb = 25 OC VRRM ~~ max. 15 kV Non-repetitive peak reverse voltage; t<10ms VRSM max. 15 kV Average forward current (averaged over any 20 ms period) lE(AV) max. 4mA Repetitive peak forward current lERM max. 500 mA* Storage temperature Tstg 65 to +120 C Junction temperature Tj max, 120 C CHARACTERISTICS Forward voltage Ip = 100 mA; Tj = 120 C . VE < 43 v** Reverse current VR = 11,5 kV; Tj = 120 C Ip < 3 pA Reverse recovery when switched from If = 100 mA to Vp = 100 V with dip/dt = 200 mA/us; Tj = 25 OC recovery charge Qs < T nc recovery time ter typ. 0,2 ys fall time tt > 0,1 ps Ip le dlp dt ter { time == 10% 90% Qs I 7Z72471.9A R me te Fig. 2 Definitions of Og, tr, and tp. * The device can withstand peak currents occurring at flashover in the picture tube. ** Measured under pulse conditions to avoid excessive dissipation. 114 May 1982 N AMER PHILIPS/DISCRETE ObE D MM 6653931 0011077? & Silicon e.h.t. soft-recovery rectifier diode - 7 BY509 TN T-03-09 7282239 'E(AV) (mA) Fig. 3 Maximum permissible average forward current as a function of ambient temperature. Vr = VRWmax: The device should be mount- ed in such a way that RepjaS120K/W. + 0 50 100 150 Tamb (C) a4 fe] | Vr Vo a | 72673021 C Fig. 4 Typical operation circuit. YR I Vem % . time + Tnom= 64s ->| 6% + 7265062,1 Fig. 5 Typical apptied voltage. July 1986 115 * Spiaicers 2 ay Pa REEL NORORR SESH IT ros N AMER PHILIPS/DISCRETE 7282240 typ Ve max Ve 200 IF (mA) 100 0 50 100 150 Ve (Vv) Fig. 6 _T; = 25 9C; - Tj = 120 c. OBE D MM 6653931 0011098 T BY509sd{| oo OO T-03-09 116 May ve (