Ol DEB 3a7S0a1 oo17415 oO , 3875081 G E SOLID STATE o O1E 17415 0 >> 3R=7/ General-Purpose Power Transistors 7" SS-1F * File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: = Low saturation voltages = Complementary n-p-n and p-n-p types . = Maximum safe-area-ol-operation curves specified for de operation The RCA-2N6106-2N6111, 2N6288-2N6293, and 2N6473- 2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The 2N6288-2N6293, 2N6473, and 2N6474 are n-p-n complements of p-n-p types 2N6106- 2N6111, 2N6475, and 2N6476", respectively. All these transistors are Intended for a wide varlety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high- tidelity amplifiers. The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit Into TO-213AA sockets. The remaining types are supplied in the JEDEC TO-220AB straight-lead version of the VERSAWATT pack- age. All of these devices are also avallable on special order in a variety of laad-form configurations. *Formerly RCA Dev. Nos. TA7784, TA8323, TA7783, TA8232, TA7782, TA8231, TA8444, and TA8723, respectlvaly. Formerly RCA Dev, Nos. TA8210, TA7741, TA8211, TA7742, TA&212, TA7743, TA8445, and TA8722, respectivaly. MAXIMUM RATINGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS Vt ct = (FLANGE) OC po i TOP VIEW Le W2C5-39069 JEDEC TO-220AB E a -_t__,! (FLANGE) C) 5 TP Top View 8 9208-40186 i JEDEC TO-220AA__ 2N6288 2N6290 2N6292 2N6289 2N6291 2N6293 2N6473 2N6474 N-P-N P-N-P VeGO scat eee eer ee eeecreeeeseeeeveresueunnene pane eereucenes * Veex(sus) Rus = 100, Vea=0V Voe0(SUS) veeeeresee . * Veso * Ie (Te S 106C) ..., * Ie (Te = 130C) 0, Py In accordance with JEDEC registration data. 2N6110$ =2N6108$ 2N6106 2NG475 2NG476t 2N6111 2N6109{ 2N6107} 40 60 80 110 130 v 40 60 80 110 130 v 30 50 70 100 120 v 5 v 7 4 A 3 2 A 40 Ww 16 Ww Derate linearly 0.32 WiC 1.8 Ww Derate linearly 0.0144 WiC ~65 to 150 C 235 C For p-n-p devices, voltage and current values are negative. 419 0958 F-O1OL DE B3a750a1 cory, 2 I 3875081 GE SOLID STATE. General-Purpose Power Transistors 2N61 06-2N61 11, 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified * * * OTE Fai SSR IT T 33-19 @ Pulsed: Pulse duration = 300 us, duty factor = 0.018. b CAUTION: The sustaining voltage Vceolsus) and Voep sus} MUST NOT be measured on a curve tracer. TEST CONDITIONS LIMITS 2N6292 2N6290 2N6288 CHARAC- VOLTAGE} CURRENT | 2N6293 2N6291 2N6289 UNITS TERISTIC Vide Ade 2Ne106 | 2NG108 2N6110 2n6107 =| 2Ne109 2N6111* Voce |VBE| 'c Ig |MIN.JMAX. | MIN.MAX. | MIN| MAX, IcER 75 | 0.1 -|- -|- (Ree = 1002) 55 -|- -j) 0.1 -| - 35 -|- -| - - {0.1 (Rag = 1002, 70 - 2 -|- -{ - Te = 150C) 50 -~|- - 2] -1 - 30 -}|- -|- - 2 Icex 75 }-1.5 - 0.1 - - - _ | (Rpg = 1009} 56 |~1.5 -|- ~| of -{| - 37.5 |-1.5 -|{- -| - -| o4 mA (Ree = 1002, 70 |-15 j| 2 -| - ~|- Tc = 150C) 50 |-1.5 -|- - 2) -] - 30 1.5 -|- ~| - _ 2 IcEO 60 oO; - 1 - _ _ _ 40 of -| - - 1 ~{- 20 o] -} - -j| - - 1 lEBO 5 0 - 1 - 1 - 1 Veeolsus) 0.14 o| 70 | - 50 | - 30} - V Vee Risusib 0.18 80 | - 60 | - 40} if (Ree = 100 2) hee 4 2a 30; 150 -jf- ~|- 4 2.58 ~|- 30 | 150} -} - 4 3a -|[- -j - 30 | 150 4 7a 23] - 23| - 23} - Vee 4 2a - | 15 -| - -|- 4 2,58 -| - -j} 15] -] - 4 3a -|- -| - -} 15 4 7a ~ 3] - 3] - 3 Vv Vecelsat) 2a] 0.2] 1 -j| - -|- 2.52 [0.25] - | - - 1 -| - 32 | 03) -] - -| - - 1 78 3] -| 35) -]| 35] -| 35 nel (f = 1 MHz) 2N6288-93 4 0.5 4j- 4} - 4] - 2N6106-11 -4 -0.5 1o | - io | - 10} - I * | hee (f= 50 kHz) 4 05 20 | - 20 | - 20} - . fy . 2N6288-93 4 0.5 io | - 10 | - w} MHz 2N6106-14 -4 0.5 10 | - 10 | - 10] - *| Cop (f= 1 MHz) 109 0 -{| 250] -| 250} ]| 250 Hi pF Rose 413.125] -13.125 | - | 3.126 we ReJA -{| 7o} -| 7} -] 70 yom * In accordance with JEDEC registration data. Vag value. . @ For p-n-p devices, voltage and curren values are negative.Ob DEM 3875081 oo17442 7 DIE 17417 0960 0 Ts General-Purpose Power Transistors 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (To) = 28C Unless Otherwise Specifiea T: 22 - (9 TEST CONDITIONS LIMITS VOLTAGE] CURRENT | 2N6474 2NG6473 CHARACTERISTIC Vide Ade 2N6476 2n6e475 | UNITS Vce|VBe| 'c Ig |Min.] Max. | Min.} Max. IcER 120 - 0.1 - - (Ree = 100 Q) 100 -| - -] 04 (Rge = 1002 120 - a} -| - Te = 100C) 100 -|- - 2 * lceEx 120 |--1.5 - 0.1 - - (Ree = 1009) 100 |-1.5 -| - -| 0.1 mA (Ree = 1002, 120 |~1.5 - 2} -] - Te = 100C) 100 |~1.5 -| - - 2 *lIceo 60 o | - 17) -| - 50 0 -}- - 1 *lleBo -5 0 - 1 - 1 . * 1 Vceolsus)> 0.18} oO [120] - 100 | Voertsus)> vl. (Rpg = 1002} 0.18 130 | - 110) - *Ihee 4 1.58 15 | 150 | 15] 160 h 2.5 4a 2 -~ 2 ~ t * VBE 4 1,58 - 2] - 2 2.5 4a ~| 35 [| -1 35 Vv * 1Veglsat) 154 Jo15| -| 1.2] -] 1.2 4a 2}-] 25 | -} 25 . * |Ihgel (f= 1 MHz) 2N6473-74 4 0.5 4] - 4{ - 2N6475-76 -4 0.5 5] - 5] - * Ihre (F= 50 kHz) 4 0.5 20 | - 20} - ff 2N6473-74 4 0.5 - 4] - MHz 2N6475-76 -4 +-0.5 - - * Coho (f= 1 MHz) 10 0 - | 250 | - | 250 pF Rosc (3.125 | 43.125 coAW Rosa = 70 | - 70 * in accordance with JEDEC registration data c Veg value. 4 Pulsed: Pulse duration = 300 us, duty factor = 0,018, b CAUTION; The sustaining voltage Veeolsus) are Veer(susl MUST NOT be measured on a curve tracer. * For p-n-p devices, voltage Bnd current values are negative. 421 F-03Ol De W3875081 0017418 & I 0i 17418 dD) raa-/) @ 2 2 x 2 T uv = SB o Q, a vu $1 a. + s 3! a a a 3 oT ADY 2N61 06-2N6111 , 2N6288-2N6293, 2N6473-2N6476 CASE TEMPERATURE I To } *C ercs- 2884s Fig, 1 ~ Current derating curves for all types. vero (ane4 YCEO MAK 100 V(2N6473) TO +k ul ~ COLLECTOR -TO-EMITTER VOLTAGE I Vogle oucs-22528 Fig, 3 - Maximum operating areas for 2NG473 2N6474 (To* 100 Ch. COLLECTOR- 0.01 04 1 -t0 COLLECTOR CUNRENT {Tc]A p7cs-18008 Fig. - Typical dc beta characteristics far 2N6106 2NG61TT, 422 F-04 Vero WAK.A30 (2N6ze8 6 244269) Voeo MAX.S0 (2Nez90 6 Youg MAK- 704 (znezez & 5 i E g COLLECTOR -TO-EMITTER VOLTAGE [Vce)- 9209-72926 Fig, 2+ Maximum operating areas for 2N6288 2N6293 (To= 100 C). i E f t + Voeo MAX. 120 V (2N64 Voeq MAX s100V (2N64 . 1 - -I0 -100 TOR -TO-EMITTER VOLTAGE (Vcel- COLLECTOR -TO- Weel sacs. sane Fig. 4 ~ Maximum operating areas for 2N6476 and 2N6476 (To = 100 C). 7 TO-EMITTER VOLTAGE # 2 5 & Z Ez r ' 3 2 i 8 oo oO 1 1 COLLECTOR CURRENT ITg]A SZCS-19640 RE Fig. 6 - Typical de beta characteristics for 2N6288 2N6293, 0961 satO1 DE 3875081 0017419 4 , O1E 17419 DT S3*f/ General-Purpose Power Transistors t 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 T3B=19 3875081 GE SOLID STATE t DC FORWARO- CURRENT TRANSFER RATIO OC FORWARD- CURRENT TRANSFER RATIO (beg) eg 701 =I COLLECTOR CURRENT (TelA Ot 1 COLLECTOR CURRENT (Icla sacs-a2836 92C8-22559M Fig. 7 - Typical de beta characteristics for Fig, 8- Typical de beta characteristics for 2N6473 and 2N6474, 2N6475 and 2N6476. CASE TEMPERATURE #25C Vogo (MAX.1=-30 (2NGI0, 2NEIN} +1 Veo (MAX.)~50V {2N6108, 2N6IO9) ~ | Vogg (MAK. = = 70 7|(2N6I06, 2NGIO7) COLLECTOR-TO-EMITTER VOLTAGE (Vce)V 9205-18001 Fig. 9 - Maximum operating areas for 2NG106 ~ 2N6111 Tet 28C). . 4232c. OL DE 3875081 couzyzg y 7 3875081 GE SOLID STATE O1E 17420. pte sS371) General-Purpose Power Transistors : 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Te BBAG cmap CASE TEMPERATURE (Tc) #25 WAX (CONTINUOUS) (2N6266, 2N6269) I o H ~ - =z w ge 2 o 5 5 wy 4 8 =70V {2H6292, 2N6293) { B 0 t 00 COLLECTOR-TO-EMITTER VOLTAGE (Vce}V 928-19662 Fig. 10 ~ Maximum operating areas for 2N62882N6293 (Te = 25C). cl-A i 3 ; 4 8 0, VcEo . . {2N6473) ' 2 4 6st 2 alee 2 4 eel to 1000 COLLECTOR -TO-EMITTER VOLTAGE {Voe)- V 9209-22524 Fig. 11 - Maximum operating areas for 2N6473 and 2N6474 (To = 25C). 424 9963 F 06Ol DEM 3875081 oouz42e. & [ 3875081 G E SOLID STATE | O1E 17421 dD PSs! General-Purpose Power Transistors 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 a 4 o COLLECTOR CURRENT MAX: 120 V t MAX #=100 V (2N6475} 2 4 2 4768 2 466 | ~i00d0 COLLECTOR -TO-EMITTER VOLTAGE (Vop)- 920$-22527 Fig. 12 - Maximum operating areas for 2N6475 2N6476 ( To 25C), COLLECTOR TOEMITTER VOLTAGE (Weghtedv COLLEC TOM + TO -EMITTER VOLTAGE @ASE CURRENT 0.5 al ! BASE = TO-EMITTER VOLTAGE (Yee? -v BASE+YO- EMITTER VOLTAGE (Vel-V Sace-eoiz S2C8-27531 Fig. 13 -Typical input characteristics for 2NG106 ~ Fig. 14 ~ Typical inpue charecteristics for 2NG288 2N6111, ING475, and 2N6476, 2N6293. *TO-EMITTER VOLTAGE (Vcphe4V COLLECTOR=TO~EMITTER VOLTASE (Vo phe-4y ~ COLLECTOR CURRENT [Ip }A Ey =08 ~t =? BASE-TO-EMITTER VOLTAGE (Vag)-v BASE -TO- EMITTER VOLTAGE Wai mv a209-7632 Srct-1ole Fig. 15 - Typical input characteristics for 2N6473 Fig. 18 - Typical transfer characteristics for 2N6106 2N6474, 2N6111, 425 233-19 a3875081 GE SOLID STATE O1E 17422 0D T S387// General-Purpose Power Transistors -2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 COLLECTOR-TO-EMITTER VOLTAGE (Voge) s4V COLLECTOR=TO-EMITTER VOLTAGE ye ay COLLECTOR CURRENT {I,)A vu HW E z wi < x 2 o So Ee o w Z i i2 Le 16 BASE -TO-EMITTER VOLTAGE (Wael v BASE -TO-EMITTER VOLTAGE ee) _v 9205-22535 9208-22636 Fig, 17 - Typical transfer characteristics for 2NG6288 Fig. 18 - Typical transfer characteristics for 2N6293, 2N6473 and 2N6474, TEMPERATURE (Te) #25 C COLLECTOR-TO~EMITTER WOLTAGE (Vople-4 3 e COLLECTOR CURRENT (Ic)A COLLECTOR CURRENT {I-A DASE-TO- EMITTER VOLTAGE (Vag? v COLLECTOR-TO-EMITTER VOLTACE (VeeiV 2209-22837 OIE 1d O1BRI Fig. 19 - Typical transfer characteristics for Fig. 20 - Typical output characteristics for 2N6475 and 2N6476. 2NG106 2N6T11. CASE TEMPERATURE (Ty Ve2sr CASE TEMPENATURE (Tc]25C. COLLECTOR CURRENT {I]A 2 4 6 6 6 2 4 6 COLLECTOR TO--EWMITTER VOLTAGE (YcglV COLLECTOR-TO- EMITTER VOLTAGE (Vcel- S2CS-1FOT IAL Bees- 27539 Fig. 21 - Typical output characteristics for Fig. 22 - Typical output characteristics for 2N6288 2N6293, 2N6473 and 2NG6474, 426 __. 2 NORE OL DE 3875081 0017423 G i 3875081 GE SOLID STATE O1e 17423. dD? ss-/] eneral-rurpose rower Transistors : , 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 COLLECTOR -TO-EMITTER VOLTAGE (VcE}e-4 T- 4D FG GASE TEMPERATURE (Ty Je CASE TEMPERATURE a Ke c 5 5 3 $ = 5 w a 2 8 1 GAIN~BANOWIOTH PRODUCT (f7]MHE COLLECTOR-=10- EMITTER VOLTAGE {og)V 70.01 ol -t 710 ares-tiass COLLECTOR CURRENT (Tl& eues-2e5z0 Fig. 23 = Typical output characteristics for Fig. 24 - Typical gain-bandwidth praduct 2N6106 2N6475 and 2N6476. 2N6111, 2N6475, and 2N6476, COLECTOR-TO-EMITTER VOLTAGE icrh=4 CASE TEMPERATURE [Tohe 28C GAIN-BANDWIDTH PROOUCT (t7)-MHz COLLECTOR -TO-EMITTER VOLTAGE (Veg)e-4 CASE VYEMPERATURE (Tp = 254 2 z ' $ = 5 ; z 8 z a = < a . z < $ COLLECTOR CURRENT lIcl-& 220S~ 19674 Ol COLLECTOR CUARENT (Te}A 9208-22530 Fig, 25 - Typical gain-bandwidth product for 2N6288 ~ 2N6293, Fig. 26 ~ Typical gain-bandwidth product for 2N6473 and 2N6474, 5 w & ecwav 2 i 1201 & 25 mt pe JW WLLER No. 4533, 5 O OR EQUIVALENT gH 3 a poop 2 oo ilo T COLLECTOR-TO-EMITTER VOLTAGE 63v 1 cone | Weg) Vv . bane nl- ostinLascore Sac-22941 GHOPRER TPE MEWLETT-PACKARD. Nota: Curve will be inverted and polarity reversed P&B JUL BI3CE, MODEL No 1308, for p-n-p types. The sustaining voltage, one. OR EQUIVALENT VceRtsus), is accepatble when the traces fail to the right and above the designated points: ee Point A: 2N6110,2N6111,2NG288,2N6289 Point B: 2N6108,2N6109,2N6290,2N6291 Veen it x2 Point C: 2N6106,2N6107,2N6292,2N6293 KOTE! FOR p-n-p TYPES,REVERSE POLARITY OF Vee: . Point D: 2N6475,2N6473 szca-22540 Point E: 2N6476,2N6474 . Fig. 26 - Oscilloscope delay for measurement of Fig. 27 - Circuit used to measure sustaining sustaining voltage (last cireult shown in voltage Veg plsus) for all types. Fig, 27). - 427 0966 F-09