© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 3 1Publication Order Number:
MBRAF260/D
MBRAF260T3G,
NRVBAF260T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•Low Profile Package for Space Constrained Applications
•Rectangular Package for Automated Handling
•Highly Stable Oxide Passivated Junction
•150°C Operating Junction Temperature
•Guard−Ring for Stress Protection
•NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
•Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
•Weight: 95 mg (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Cathode Polarity Band
•Device Meets MSL 1 Requirements
•ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B Device Package Shipping†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
60 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRAF260T3G SMA−FL
(Pb−Free) 5000 / Tape & Ree
l
RAG = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
NRVBAF260T3G SMA−FL
(Pb−Free) 5000 / Tape & Ree
l
RAG
AYWWG
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
2
MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(At Rated VR, TL = 120°C) IO2.0 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 90°CIFRM 4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A
Storage Temperature Range Tstg −55 to +150 °C
Operating Junction Temperature TJ−55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C) dv/dt 10,000 V/ms
Controlled Avalanche Energy (see test conditions in Figures 6 and 7) WAVAL 10 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1) RqJL
RqJA 25
90 °C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A)
(iF = 2.0 A)
vFTJ = 25°C TJ = 125°CV
0.51
0.63 0.475
0.55
Maximum Instantaneous Reverse Current (Note 2)
(VR = 60 V)
IRTJ = 25°C TJ = 125°CmA
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
3
Figure 1. Typical Forward Voltage
0.1 0.2 0.4 0.70.6
10
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage
0.2 0.
8
0.4 0.60.3 0.5
10
0.1
1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
10 3002040
I
R
, REVERSE CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance
75°C
25°C
1.0E−02 125°C
75°C
25°C
10 3002040
10
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.3 0.5 0.8
125°C75°C
25°C
125°C
6050 50 6
0
100
0.70.1
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
25°C
f = 1 MHz
0.001
0.01
0.1
1
10
100
0.0000001 0.000001 0.00001 0.0001 10000.001 0.01 0.1 1 10 100
Figure 5. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
20%
10%5%
2%
1%
Single Pulse
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
4
MERCURY
SWITCH
VD
ID
DUT
10 mH COIL
+VDD
IL
S1
BVDUT
ILID
VDD
t0t1t2t
Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S 1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total ener gy transferred is
equal t o the ener gy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed b y the supply during breakdown is small and the
total ener gy can be assumed to be nearly equal to the ener gy
stored in the coil during the time when S1 was closed,
Equation (2).
WAVAL [1
2LI2
LPKǒBVDUT
BVDUTVDDǓ
WAVAL [1
2LI2
LPK
EQUATION (1):
EQUATION (2):
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
5
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE A
D
E
b
L
cSOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
5.56
1.76
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1.30
RECOMMENDED
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM MIN MAX
MILLIMETERS
A0.90 1.10
b1.25 1.65
c0.15 0.30
D2.40 2.80
TOP VIEW
E1
BOTTOM VIEW
2X
2X
SIDE VIEW
A
CSEATING
PLANE
E4.80 5.40
E1 4.00 4.60
L0.70 1.10
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NBRAF260/D
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