Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.35 V / 1.5 V
• High thermal cycling performance
• Low thermal resistance IF(peak) = 6 A (f = 16 kHz)
IF(peak) = 6 A (f = 70 kHz)
IFSM ≤ 75 A
trr ≤ 230 ns / 160 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Glass-passivated double diffused PIN DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedfor useinTV 2 anode
receivers and PC monitors. tab cathode
The BY329 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRSM Peak non-repetitive peak - 1500 V
reverse voltage
VRRM Peak repetitive reverse - 1500 V
voltage
VRWM Crest working reverse voltage - 1300 V
BY329 -1500 -1500S
IF(peak) Peak working forward current f = 16 kHz - 6 - A
f = 70 kHz - - 6 A
IFRM Peak repetitive forward t = 25 µs; δ = 0.5; - 14 A
current Tmb ≤ 123 ˚C
IF(RMS) RMS forward current - 11 A
IFSM Peak non-repetitive forward t = 10 ms - 75 A
current sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 150 ˚C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 2.0 K/W
mounting base
Rth j-a Thermal resistance junction to in free air - 60 - K/W
ambient
k a
12
1
tab
2
September 1998 1 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY329 1500 1500S 1500 1500S
VFForward voltage IF = 6.5 A 1.1 1.3 1.45 1.6 V
IF = 6.5 A; Tj = 125 ˚C 1.05 1.2 1.35 1.5 V
IRReverse current VR = 1300 V - 250 - 250 µA
VR = 1300 V; Tj = 125 ˚C - 1 - 1 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY329 1500 1500S 1500 1500S
trr Reverse recovery time IF = 1 A; VR ≥ 30 V; 0.18 0.13 0.23 0.16 µs
dIF/dt = 50A/µs
QsReverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs 1.6 0.7 2.0 0.95 µC
Vfr Peak forward recovery voltage IF = 6.5A; dIF/dt = 50A/µs 17233040V
tfr Forward recovery time IF = 6.5A; dIF/dt = 50A/µs 210 220 300 320 ns
Fig.1. Definition of Vfr and tfr Fig.2. Definition of t
rr
and Q
s
time
time
VF
Vfr
VF
IF
10%
5V
tfr
100%
time
dI
dtF
IR
IF
trr
25%
Qs
September 1998 2 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
Fig.3. Basic horizontal deflection circuit.
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.5. BY329-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Fig.6. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Fig.7. Transient thermal impedance Z
th
= f(t
p
)
Line output transformer
VCC
D1
LY
Cs
Cf
deflection transistor
0 0.5 1 1.5 2
0
10
20
30
VF / V
IF / A
Tj = 125 C
Tj = 25 C
typ
max
BY32915S
10 100
1
10
100 BY459X-1500
line frequency / kHz
Maximum pulse width / us
V
time
VRRM
width tp period T
pulse
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BY229
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0 0.5 1 1.5 2
0
10
20
30
VF / V
IF / A
Tj = 125 C
Tj = 25 C
BY32915
typ
max
September 1998 3 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.8. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
12
September 1998 4 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 5 Rev 1.100
