© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 72 A
IDM TC= 25°C, Pulse Width Limited by TJM 200 A
IATC= 25°C 82A
EAS TC= 25°C5J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 1040 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL ≤ 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 600 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 41A, Note 1 75 mΩ
IXFN82N60P VDSS = 600V
ID25 = 72A
RDS(on) ≤≤
≤≤
≤ 75mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
DS99559F(07/12)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
PolarTM HiPerFETTM
Power MOSFET
Features
zInternational Standard Package
zminiBLOC, with Aluminium Nitride
Isolation
zDynamic dv/dt Rating
zAvalanche Rated
zFast Intrinsic Rectifier
zLow RDS(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterrupted Power Supplies
zAC Motor Drives
zHigh Speed Power Switching
Applications
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
IXFN82N60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 41A, Note 1 50 80 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1490 pF
Crss 200 pF
td(on) 28 ns
tr 23 ns
td(off) 79 ns
tf 24 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 41A 96 nC
Qgd 67 nC
RthJC 0.12 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 82 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 0.6 μC
IRM 6.0 A
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 41A
RG = 1Ω (External)
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
© 2012 IXYS CORPORATION, All Rights Reserved
IXFN82N60P
Fig. 6. Ma xi mum Drai n Current vs.
Cas e Temperatu re
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
ID - Am peres
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20
V
DS
- V olts
I
D
- Amperes
5V
6V
7V
V
GS
= 10V
8V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
02468101214
V
DS
- V olts
I
D
- Amperes
6V
5V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 41A Valu e vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centi gra de
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 82A
I
D
= 41A
Fig. 5. R
DS(on)
Normalized to I
D
= 41A Valu e vs.
Drain Current
0.8
1.2
1.6
2
2.4
2.8
3.2
0 20 40 60 80 100 120 140 160 180
I
D
- Ampe re s
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
IXFN82N60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140
I
D
- Ampe res
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Vo lts
I
S
- Ampe res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 41A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - Pi coF ara ds
f = 1 MHz
Ciss
Crss
Coss
Fi g . 12. F orwar d -B i as Safe Op er ati n g Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Ampe res
1ms
100µs
R
DS(on)
Limit
10ms
DC
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
© 2012 IXYS CORPORATION, All Rights Reserved
IXFN82N60P
IXYS REF: F_82N60P(9S) 07-17-12-A
Fi g . 13. Maximum Tr ansien t Ther mal Resi stan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.