IRFB4710PBF - INTERNATIONAL RECTIFIER

Notes  through  are on page 11

www.irf.com 1

04/22/04

IRFB4710PbF

IRFS4710PbF

IRFSL4710PbF

HEXFET® Power MOSFET

VDSS RDS(on) max ID

100V 0.014Ω75A

PD- 95146

D2Pak

IRFS4710

TO-220AB

IRFB4710

TO-262

IRFSL4710

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 75

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 53 A

IDM Pulsed Drain Current 300

PD @TA = 25°C Power Dissipation 3.8 W

PD @TC = 25°C Power Dissipation 200

Linear Derating Factor 1.4 W/°C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 8.2 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

lHigh frequency DC-DC converters

lMotor Control

lUninterrutible Power Supplies

lLead-Free

Benefits

Applications

lLow Gate-to-Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

Thermal Resistance

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.74

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient––– 62

RθJA Junction-to-Ambient––– 40

IRFB/IRFS/IRFL4710PbF

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 35 ––– ––– S VDS = 50V, ID = 45A

QgTotal Gate Charge ––– 110 170 ID = 45A

Qgs Gate-to-Source Charge ––– 43 ––– nC VDS = 50V

Qgd Gate-to-Drain ("Miller") Charge ––– 40 ––– VGS = 10V,

td(on) Turn-On Delay Time ––– 35 ––– VDD = 50V

trRise Time ––– 130 ––– ID = 45A

td(off) Turn-Off Delay Time ––– 41 ––– RG = 4.5Ω

tfFall Time ––– 38 ––– VGS = 10V 

Ciss Input Capacitance ––– 6160 ––– VGS = 0V

Coss Output Capacitance ––– 440 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 250 ––– pF ƒ = 1.0MHz

Coss Output Capacitance ––– 1580 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 280 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 430 ––– VGS = 0V, VDS = 0V to 80V 

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Typ. Max. Units

EAS Single Pulse Avalanche Energy––– 190 mJ

IAR Avalanche Current––– 45 A

EAR Repetitive Avalanche Energy––– 20 mJ

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode)  ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 45A, VGS = 0V 

trr Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 45A

Qrr Reverse RecoveryCharge ––– 180 260 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics

300

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– 0.011 0.014 ΩVGS = 10V, ID = 45A 

VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA

––– ––– 1.0 µA VDS = 95V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

IGSS

IDSS Drain-to-Source Leakage Current

IRFB/IRFS/IRFL4710PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

1000

0.1 1 10 100



s PULSE WIDTH

T = 25 C

J°



TOP

BOTTOM

VGS

15V

12V

10V

8.0V

7.5V

7.0V

6.5V

6.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

6.0V

100

1000

0.1 1 10 100



20µs PULSE WIDTH

T = 175 C

J°



TOP

BOTTOM

VGS

15V

12V

10V

8.0V

7.5V

7.0V

6.5V

6.0V

V , Drain-to-Source Volta

e (V)

I , Drain-to-Source Current (A)

6.0V

0.1

100

1000

6.0 7.0 8.0 9.0 10.0



V = 50V

s PULSE WIDTH

V , Gate-to-Source Volta

e (V)

I , Drain-to-Source Current (A)



T = 25 C

J°



T = 175 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)



V =

I =

10V

75A

IRFB/IRFS/IRFL4710PbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

040 80 120 160 200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)



FOR TEST CIRCUIT

SEE FIGURE

I =

45A



V = 20V

V = 50V

V = 80V

0.1

100

1000

0.0 0.4 0.8 1.2 1.6

V ,Source-to-Drain Volta

e (V)

I , Reverse Drain Current (A)



V = 0 V



T = 25 C

J°



T = 175 C

J°

110 100

VDS, Drain-to-Source Volta

e (V)

2000

4000

6000

8000

10000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

ds SHORTED

Crss

= C

Coss

= C

+ C

1 10 100 1000

VDS , Drain-toSource Volta

e (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Sin

le Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRFB/IRFS/IRFL4710PbF

www.irf.com 5

Fig 10a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1



Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C



t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

IRFB/IRFS/IRFL4710PbF

6www.irf.com

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

25 50 75 100 125 150 175

100

150

200

250

300

350

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)



TOP

BOTTOM

18A

32A

45A

0.01

Ω

D.U.T

VDS

-VDD

DRIVER

15V

20V

VGS

IRFB/IRFS/IRFL4710PbF

www.irf.com 7

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



IRFB/IRFS/IRFL4710PbF

8www.irf.com

LEAD ASSIGNMENTS

1 - G A T E

2 - D R A IN

3 - S O U R C E

4 - D R A IN

- B -

1.32 (.052)

1.22 (.048)

3X 0.55 (.022)

0.46 (.018)

2.92 (.115)

2.64 (.104)

4.69 (.185)

4.20 (.165)

3X 0.93 (.037)

0.69 (.027)

4.06 (.160)

3.55 (.140)

1.15 (.045)

M IN

6.47 (.255)

6.10 (.240)

3.78 (.149)

3.54 (.139)

- A -

10.54 (.415)

10.29 (.405)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

3X 1.40 (.055)

1.15 (.045)

2.54 (.100)

0.3 6 (.01 4 ) M B A M

1 2 3

NOTES:

1 D IM E N S IO N ING & T O LER A N C IN G P E R A N S I Y 14 .5 M , 1 9 82. 3 O U TLINE C O N F O R MS TO JE D E C O U T LIN E TO -220 A B .

2 C O N T R O L LIN G D IM ENSIO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N TS D O NOT INCLUDE BURRS.

HEXFET

1- GATE

2- DRAIN

3- SOURCE

4- DRAIN

LEAD ASSIGNMENTS

IGBTs, CoPACK

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE:

IN THE ASSEMBLY LINE "C"

T HIS IS AN IRF1010

LOT CODE 1789

AS S E MB LED ON WW 19, 1997 PART NUMBER

AS S E MB L Y

LOT CODE

DAT E CODE

YEAR 7 = 1997

LINE C

WE E K 19

LOGO

RECTIFIER

INT E RNAT IONAL

Note: "P" in assembly line

position indicates "Lead-Free"

IRFB/IRFS/IRFL4710PbF

www.irf.com 9

D2Pak Part Marking Information (Lead-Free)

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

Note: "P" in as s embly line

pos ition indicates "L ead-F ree"

F530S

T HIS IS AN IRF 530S WIT H

LOT CODE 8024

AS S E MB L ED ON WW 02, 2000

IN TH E AS S E MB LY LINE "L "

AS S E M B L Y

LOT CODE

INT E R NAT ION AL

R E CT IF IE R

LOGO

PART NUMB ER

DAT E CODE

YEAR 0 = 2000

WEE K 02

LINE L

F530S

A = ASSEMBLY SITE CODE

WEEK 02

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

R E CT IF IE R

INT E R NAT IONAL

LOGO

LOT CODE

ASSEMBLY

YE AR 0 = 2000

DATE CODE

PART NUMBER

IRFB/IRFS/IRFL4710PbF

10 www.irf.com

TO-262 Part Marking Information

TO-262 Package Outline

AS S E MB L Y

LOT CODE

RECTIFIER

INT E R NAT IONAL

AS S EMBLED ON WW 19, 1997

Note: "P " in as s embly line

pos ition i ndi cates "L ead- F r ee"

IN THE ASSEMBLY LINE "C" LOGO

T H IS IS AN IR L3103L

LOT CODE 1789

EXAMPLE:

LINE C

DAT E CODE

WE E K 19

YE AR 7 = 1997

PART NUMBER

LOGO

LOT CODE

AS S E MB L Y

INT E R NAT IONAL

RECTIFIER

PR ODU CT (OPT IONAL)

P = DE S IGNAT E S L E AD-F R E E

A = AS S E MB L Y S IT E CODE

WE E K 19

YE AR 7 = 1997

DAT E CODE

IRFB/IRFS/IRFL4710PbF

www.irf.com 11

 This is only applied to TO-220AB package

 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Starting TJ = 25°C, L = 190µH

RG = 25Ω, IAS = 45A, VGS = 10V

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS

 This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/04

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

M IN .

30.40 (1.197)

M AX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. CO M FO RM S T O EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/