PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 100V RDS(on) max ID 0.014 75A D2Pak IRFS4710 TO-220AB IRFB4710 TO-262 IRFSL4710 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. Units 75 53 300 3.8 200 1.4 20 8.2 -55 to + 175 A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient through www.irf.com Typ. Max. --- 0.50 --- --- 0.74 --- 62 40 Units C/W are on page 11 1 04/22/04 IRFB/IRFS/IRFL4710PbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- 3.5 --- --- --- --- Typ. --- 0.11 0.011 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.014 VGS = 10V, ID = 45A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 95V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 35 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 110 43 40 35 130 41 38 6160 440 250 1580 280 430 Max. Units Conditions --- S VDS = 50V, ID = 45A 170 ID = 45A --- nC VDS = 50V --- VGS = 10V, --- VDD = 50V --- ID = 45A ns --- R G = 4.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 190 45 20 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 75 --- --- showing the A G integral reverse --- --- 300 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 45A, VGS = 0V --- 74 110 ns TJ = 25C, IF = 45A --- 180 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFS/IRFL4710PbF 1000 1000 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 100 100 10 1 6.0V 0.1 20s PULSE WIDTH T = 25 C J 0.01 0.1 1 10 100 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 C 9.0 1 10 100 Fig 2. Typical Output Characteristics 3.0 8.0 J VDS , Drain-to-Source Voltage (V) 1000 7.0 20s PULSE WIDTH T = 175 C 1 0.1 Fig 1. Typical Output Characteristics 0.1 6.0 6.0V 10 VDS , Drain-to-Source Voltage (V) 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 75A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB/IRFS/IRFL4710PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 8000 Coss = Cds + Cgd Ciss 6000 4000 2000 Coss VGS , Gate-to-Source Voltage (V) 20 10000 ID = 45A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 40 1000 ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 TJ = 175 C 10 TJ = 25 C 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1 80 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 4 VDS = 80V VDS = 50V VDS = 20V 1.6 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 10 1msec 1 0.1 Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/IRFS/IRFL4710PbF 80 VDS VGS I D , Drain Current (A) D.U.T. RG 60 RD + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 P DM 0.05 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFS/IRFL4710PbF D R IV E R L VD S D .U .T RG + - VD D IA S 2V0GS V tp A 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 350 1 5V TOP 300 BOTTOM 250 ID 18A 32A 45A 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/IRFS/IRFL4710PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFL4710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 ) 4 1 5 .24 ( .6 0 0 ) 1 4 .84 ( .5 8 4 ) LEAD ASSIGNMENTS 1 .1 5 (.0 4 5 ) M IN 1 2 3 4- DRAIN 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) 4- COLLECTOR 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 3X 3X L E A D A S S IG N M E N T S IGBTs, CoPACK 1 - GATE 2 D R A IN 1- GATE 1- GATE 3 - S O U R C E 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - D R A IN HEXFET 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 2 .5 4 (.1 0 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U TL IN E C O N F O R M S TO J E D E C O U T L IN E TO -2 2 0 A B . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 4 H E A T S IN K & L E A D M E A S U R E M E N TS D O NO T IN C L U D E B U R R S . TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MBL Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB LY LOT CODE 8 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRFB/IRFS/IRFL4710PbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 53 0S WIT H L OT COD E 80 24 AS S E MB L E D ON WW 0 2, 20 00 IN T H E AS S E MB L Y L INE "L " IN T E R N AT ION AL R E CT IF IE R L OGO N ote: "P " in as s embly line pos ition indicates "L ead-F ree" P AR T N U MB E R F 53 0S AS S E MB L Y L OT COD E D AT E COD E YE AR 0 = 2 00 0 WE E K 02 L IN E L OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E www.irf.com P AR T N U MB E R F 530 S D AT E COD E P = D E S IGN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E 9 IRFB/IRFS/IRFL4710PbF TO-262 Package Outline TO-262 Part Marking Information E XAMPL E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 10 PAR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODU CT (OPT IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com IRFB/IRFS/IRFL4710PbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .60 (.0 6 3 ) 1 .50 (.0 5 9 ) 4 .10 (.16 1 ) 3 .90 (.15 3 ) F E E D D I R E C T IO N 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 .8 5 (.07 3 ) 1 .6 5 (.06 5 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 .7 5 (. 0 6 9 ) 1 .2 5 (. 0 4 9 ) 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) F E E D D IR E C T I O N 1 3 .5 0 (.5 3 2 ) 1 2 .8 0 (.5 0 4 ) 2 7 .40 (1 .0 7 9) 2 3 .90 (.9 4 1 ) 4 330.00 (14.173) M AX . 6 0 .0 0 (2 .3 6 2) M IN . N O TES : 1 . C O M F O R M S T O E IA- 4 1 8. 2 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E T E R . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26.40 (1.039) 24.40 (.961) 3 3 0 .4 0 (1 .19 7 ) M AX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 190H Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS RG = 25, IAS = 45A, VGS = 10V ISD 45A, di/dt 420A/s, VDD V(BR)DSS, This is only applied to TO-220AB package TJ 175C This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/