A\LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD 16K, 17K SERIES 225 WATT (20 AMP CONTINUOUS, 40 AMP PEAK) FEATURES e Electrical specifications guaranteed for operating junction temperature range of 0 - 200C e Guaranteed and 100% tested for Isp (Secondary Breakdown Current) insur- ing maximum performance at high energy levels e Low thermal resistance for more use- able power and lower operating temperatures e Hermetically sealed DESCRIPTION The PMD 16K Series of devices are three-terminal NPN Darlington Power Transistors. The PMD 17K Series of devices are PNP Darlington Power Transistors. These devices are monolithic epitaxial base structures with built-in base to emitter shunt resistors. The devices are CVD glass passivated to increase reliability and provide reduced high- temperature reverse Jeakage current. This important feature enables this series of Darlington devices to meet guaranteed operating junction temperatures of 200C. Internal diode protection (D1) of the Darlington configuration is built into the structure to limit the device power dissipa- tion during negative overshoot. PARAMETER SYMBOL | MAXIMUM | UNITS Collector Emitter Voltage Voeo Vde PMD16K, 17K80 80 PMD16K, 17K100 100 Collector Base Voltage Veso Vde PMD16K, 17K80 80 PMD16K, 17K100 100 Emitter Base Voltage Vepo 5 Vde Collector Current Io Adc Continuous 20 Peak 40 Base Current lg 0.5 Adc Thermal Resistance Bic 0.67 CWatt Total Internal Power Dissipation @T, = 5001 | PP 225 Watts Operating Junction and Ty _ 9 Storage Temperature | Test 88 to + 200 For operation above T, = 50C, derate @ 1.5 W/C. DEVICE SELECTION GUIDE DEVICE yO POLARITY PMD16K80 B0V NPN PMD16K100 100V NPN PMD17K80 BV PNP PMO17K100 100V PNP Excellent thermal resistance junction to case (6,,) provides for more useable power at lower operating temperatures. This, coupled with 100% igg testing, in- sures optimum performance and dura- bility for DC motor control and other com- plementary Darlington applications. These Darlington devices are hermetically sealed copper/steei TO-3 packages providing high reliability and low thermal resistance. 237PMD 16K, 17K SERIES ELECTRICAL CHARACTERISTICS All parameters are guaranteed at T, = 0 to 200C, unless otherwise specified. Short Circuit Forward Transfer Ratio Io = 7 Ade; Voce = 3Vde f = 1 MHz; Ty = 25C Parameter Symbol Test Conditions Minimum Maximum Units ON CHARACTERISTICS Collector Emitter Veetsat) Ig = 10 Adc; lg = 40 mAdc 2.0 Vde Saturation Voltage Base Emitter Vee(on) Io = 10 Ade; Voe = 3 Vde 2.8 Vde Turn-on Voltage! Base Emitter Vae;sat) Ic = 10 Ade; |3 = 40 mAdc 2.8 Vde Saturation DC Current Gain hee Ig = 10 Adc; Voge = 3 Vde PMD16K80, 100 Ty = 25C 1000 20,000 PMD17K80, 100 800 20,000 Forward Bias Secondary Is Voce = 30 Vde; Ty = 25C 7.5 Adc Breakdown Current 1 sec non-repetitive pulse OFF CHARACTERISTICS Collector Emitter Vier)cEo log = 100 mAdc; Ty = 25C Vde Breakdown Voltage (Base Open) PMD1&K, 17K80 80 PMD16K, 17K100 100 Collector Emitter Visusycer log = 100 mAdc; Ree = 2.2k0 Vde Sustaining Voltage PMDi6K, 17K80 80 PMD16K, 17K100 100 Emitter Base lego Veg = 5 Vde; Ie = OA 3.0 mAdc Leakage Current Collector Emitter lcer mAdc Leakage Current PMD16K, 17K80 Voe = 54 Vde; Ree = 2.2k0 7.0 PMDi6K, 17K100 Vee = 67 Vde; Ree = 2.2k0 7.0 DYNAMIC CHARACTERISTICS Output Capacitance Cob Vcg = 10 Vde; Ie = 0 Ade 400 pF f = 1 MHz; Ty = 25C Small Signal Ne lo = 7 Ade; Voce = 3 Vde 300 Current Gain f = 1 kHz; Ty = 25C Common Emitter INeel 4 (1) Puise tested with pulse width = 300 wS and duty cycle = 2.0%. 238PMD 16K, 17K SERIES OPERATIONAL DATA POWER DERATING SAFE OPERATING AREA (PMD 16K, 17K SERIES) (PMD 16K, 17K SERIES) 240 40.0 20.0 200 de (1 sec) @ 10.0 }T, = 25C 5 \ 8.0 = 160 NX] 6.0 & 6 40 bE = & 120 NJ = Qo 20 a & 80 1.0 wi . 5 8 2 6 40 4 PMD 1 17K80 PMD 16K, 17K100 2 0 25 50 75 100 125 150 175 200 1 2 4 6810 20 4060 100 CASE TEMPERATURE (C MEASURED BETWEEN THE TERMINALS Vee (VOLTS) FORWARD VOLTAGE OF D1 FORWARD VOLTAGE OF D1 (PMD 16K SERIES) (PMD 17K SERIES) 3.5 3.0 y 25 / g 2.0 7 5 > = 45 Z = > Loot 1.0 een 0.5 oL__| A 2 4 6.810 2 4 6 810 A 2 4 6810 2 4 6 810 I; (AMPS) \- (AMPS) 239PMD 16K, 17K SERIES VOLTS 20,000 10,000 6,000 4,000 2,000 Hee 1,000 600 400 200 100 240 OPERATIONAL DATA ON VOLTAGE VS COLLECTOR CURRENT (PMD 16K SERIES) Ty = 25C Io/la = 250 Vee (SAT) Vee con Voce = 3V Voce (SAT) 4 6 84 2 lc (AMPS) 4 6810 20 DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (PMD 16K SERIES) Vee = 3V 2 4 6.84 2 4 6810 20 le (AMPS) ON VOLTAGE VS COLLECTOR CURRENT (PMD 17K SERIES) 3.0 Ty = 25C Ic/lgp = 250 2.5 2.0 Vee (sat) VOLTS 15 Vee (on: Voce = 3V 1.0 Voce (sat) 5 2 4 681 2 ic (AMPS) 4 6810 20 DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (PMD 17K SERIES) 20,000 Voce = 3V 10,000 6,000 4,000 Ty = 200C 2,000 1,000 600 400 200 100 4 6.81 2 lc (AMPS) 4 6810 20PMD 16K, 17K SERIES OPERATIONAL DATA COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION (PMD 16K SERIES) (PMD 17K SERIES) 2.1 T, = 25C 20 Ty = 25C 20A 1.9 1.8 15A 17 1.6 1.5 Vee (VOLTS) Vee {VOLTS} 1.4 1.3 1.2 1.1 1.0 5 1 2 4 6810 20 40 60100 5 1 2 4 6810 20 40 60 100 tp (MA) la (mA) 5A 5A BLOCK DIAGRAMS NPN PNP COLLECTOR COLLECTOR | BASE a RI ~S 7.5K ok Q2 R2 ~ 25 EMITTER 241PMD 16K, 17K SERIES 242 DEVICE OUTLINE O CQ) 0.992 MAX 0.157 MAX Ca BOTH ENDS 0.492 R MAX. L454 MAX, a 0.875 rand MAX. vee | [|e 0 ! | Co f x MTG. 0.433 0.0374 | BASE 472 0.0425 7 DIA 2 LEADS 1.18 1.20 0,150 0.165 DIA 2 HOLES 0.21 0.2 7 1 Base 2 Emitter Case Is Collector NOTE: Case temperature measured at point X. All dimensions are in inches.