SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
HFM201A
THRU
HFM208A
DO-214AC
MAXIMUM RA TINGS
(At TA = 25oC unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES : 1. Test Conditions: I F=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2002-12
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS V olts
Maximum DC Blocking V oltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps2.0
60
30 -55 to + 150
Amps
pF
0
C
UNITS
20
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average
TA = 55oC
Maximum Forward V oltage at 2.0A DC Volts
5.0
50Maximum Reverse Recovery Time (Note 1)
Rated DC Blocking V oltage
HFM201A HFM206AHFM203A HFM207A HFM208AHFM204A
50 uAmps
1.0 1.7
75
HFM201A
50
35
50
HFM202A
100
70
100
HFM204A
300
210
300
HFM205A
400
280
400
HFM207A
800
560
800
HFM208A
1000
700
1000
HFM203A
200
140
200
HFM206A
600
420
600
HFM202A HFM205A
1.3
@TA = 25oC
@TA = 125oC
100 uAmps
MECHANICAL DA TA
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM201A THRU HFM208A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A 1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
4.0
2.0
0 25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
HFM201A~HFM205A
HFM206A~HFM208A
TJ = 25
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01 400 20 60 80 100 120 140
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
01 2 5 10 20 50 100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.0010 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HFM206A~HFM208A
HFM201A~HFM203A
HFM204A~HFM205A
Mounting Pad Layout
RECTRON
Dimensions in inches and (millimeters)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
0.094 MAX.
(2.38 MAX.)
(5.58) REF
