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DC-0007728
2
XX1000-QT
Rev. V7
Active Doubler
7.5 - 22.5 / 15.0 - 45.0 GHz
Parameter Absolute Maximum
Drain Voltage (VD) +6 V
Source Voltage (VSS) -6 V
Drain Current (ID) 320 mA
Source Current (ISS) 60 mA
Gate Voltage (VG1) -0.4 V
Gate Voltage (VG2) +0.1 V
RF Input Power +15 dBm
Storage Temperature -65°C to +165°C
Operating Temperature -55°C to MTTF Table
Channel Temperature MTTF Table
Electrical Specifications: Input Frequency = 7.5 - 22.5 GHz, TA = +25°C
Output Frequency Range GHz 15 — 45
Input Return Loss dB — 15 —
Output Return Loss dB — 7 —
Saturated Output Power dBm — 18 —
RF Input Power dBm -10 — +10
Fundamental Leakage dBc — 20 —
Third Harmonic Leakage dBc — 30 —
Fourth Harmonic Leakage dBc — 10 —
Drain Bias Voltage VDC — +5.0 +5.5
Gate Bias Voltage 1 VDC -0.8 -0.6 -0.4
Gate Bias Voltage 2 VDC -1.2 0.0 +0.1
Supply Current (ID1,2) (VD = 5.0 V, VG1 = -0.6 V, VG2 = 0.0 V Typ.) mA — 265 280
Source Voltage VDC -5.5 -5.0 -2.0
Source Current mA 25 50 60
Absolute Maximum Ratings3
3. Channel temperature directly affects a device's MTTF.
Channel temperature should be kept as low as possible to
maximize lifetime.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 2
devices.