2
Table 1. Absolute Maximum Rating [1] Tc = +25°C
Symbol Parameter Units Absolute Max.
IFForward Current (1µs Pulse) Amp 1
PIV Peak Inverse Voltage V 50
TJJunction temperature °C 150
TSTG Storage Temperature °C -65 to 150
θJC Thermal Resistance [2] °C/W 500
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. TC = 25°C, TC where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, each diode
Symbol Parameter and Test Condition Units Min. Typ Max.
VBR Breakdown Voltage @ IR = 10µA V – 55 –
VF Forward Voltage @ IF = 30mA V – 0.88 –
VF Forward Voltage @ IF =100mA V – 0.96 1.15
RS Typical Series Resistance @ Freq = 100MHz & IF =1mA Ohm – 17.0 –
RS Typical Series Resistance @ Freq = 100MHz & IF =10mA Ohm – 2.6 –
RS Typical Series Resistance @ Freq = 100MHz & IF =100mA Ohm – 1.2 –
CT Typical Total Capacitance @ Freq = 1MHz & VR = 0V pF – 0.35 0.55
T Carrier Lifetime @ IF = 50mA & IR =250mA ns – 500 –
Trr Reverse Recovery Time @ VR =10V, IF = 20mA & 90% Recovery ns – 75 –
Table 3. Performance Table at Nominal Operating Conditions, Tc = +25°C, IF = 10mA, each diode
IIP3 [1, 4] Input 3rd order Intercept Point @ freq = 0.9GHz dBm – 56.83 –
IIP3 [2, 4] Input 3rd order Intercept Point @ freq = 1.9GHz dBm – 57.93 –
IIP3 [3, 4] Input 3rd order Intercept Point @ freq = 2.4GHz dBm – 59.26 –
IP1dB [4] Input 1dB Compressed Power @ freq = 0.9GHz dBm – 47.41 –
IP1dB [4] Input 1dB Compressed Power @ freq = 1.9GHz dBm – 48.11 –
IP1dB [4] Input 1dB Compressed Power @ freq = 2.4GHz dBm – 48.45 –
Notes:
1. 0.9 GHz OIP3 Test Condition : F1 = 0.9 GHz & F2 = 0.905 GHz, Pin =30 dBm
2. 1.9 GHz OIP3 Test Condition : F1 = 1.9 GHz & F2 = 1.905 GHz, Pin =30 dBm
3. 2.4 GHz OIP3 Test Condition : F1 = 2.4 GHz & F2 = 2.405 GHz, Pin =30 dBm
4. Measurement obtained using the demoboard described in Figure 7 & 8.