BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Very low switching losses * Low reverse current * High reverse voltage * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA APPLICATIONS Case: SOD-57 * Switched mode power supplies Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 * High-frequency inverter circuits Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV26E BYV26E-TR 5000 per 10" tape and reel 25 000 BYV26E BYV26E-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV26A VR = 200 V; IF(AV) = 1 A SOD-57 BYV26B VR = 400 V; IF(AV) = 1 A SOD-57 BYV26C VR = 600 V; IF(AV) = 1 A SOD-57 BYV26D VR = 800 V; IF(AV) = 1 A SOD-57 BYV26E VR = 1000 V; IF(AV) = 1 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics PART SYMBOL VALUE UNIT BYV26A VR = VRRM 200 V BYV26B VR = VRRM 400 V BYV26C VR = VRRM 600 V BYV26D VR = VRRM 800 V BYV26E VR = VRRM 1000 V IFSM 30 A tp = 10 ms, half sine wave Average forward current Non repetitive reverse avalanche energy I(BR)R = 1 A, inductive load Junction and storage temperature range IF(AV) 1 A ER 10 mJ Tj = Tstg - 55 to + 175 C MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient Rev. 1.8, 04-Sep-12 TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, TL = constant RthJA 45 K/W Document Number: 86040 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current SYMBOL MIN. TYP. MAX. UNIT IF = 1 A PART VF - - 2.5 V IF = 1 A, Tj = 175 C VF - - 1.3 V VR = VRRM IR - - 5 A VR = VRRM, Tj = 150 C IR = 100 A Reverse breakdown voltage IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery time IR - - 100 A BYV26A V(BR)R 300 - - V BYV26B V(BR)R 500 - - V BYV26C V(BR)R 700 - - V BYV26D V(BR)R 900 - - V BYV26E V(BR)R 1100 - - V BYV26A trr - - 30 ns BYV26B trr - - 30 ns BYV26C trr - - 30 ns BYV26D trr - - 75 ns BYV26E trr - - 75 ns 600 1.2 VR = VRRM RthJA = 45 K/W 500 RthJA = 100 K/W 200 V 400 400 V 300 600 V 200 800 V 100 1000 V IFAV - Average Forward Current (A) PR - Max. Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 0 1.0 RthJA = 45 K/W 0.8 0.6 0.4 RthJA = 100 K/W 0.2 0 0 40 80 120 160 200 0 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 80 120 160 200 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 10 VR = VRRM Tj = 175 C IF - Forward Current (A) IR - Reverse Current (A) 40 Tamb - Ambient Temperature (C) 959730 Tj - Junction Temperature (C) 959728 100 10 1 0.1 1 Tj = 25 C 0.1 0.01 0.001 0 959729 40 80 120 160 200 Tj - Junction Temperature (C) Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 0 959731 1 2 3 4 5 6 7 VF - Forward Voltage (V) Fig. 4 - Max. Reverse Current vs. Junction Temperature Document Number: 86040 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors 40 40 f = 1 MHz CD - Diode Capacitance (pF) CD - DiodeCapacitance (pF) f = 1 MHz 35 30 BYV26C 25 20 15 10 5 35 30 BYV26E 25 20 15 10 0 5 0 0.1 1 16380 10 100 0.1 VR - Reverse Voltage (V) 16381 Fig. 5 - Diode Capacitance vs. Reverse Voltage 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 04-Sep-12 Document Number: 86040 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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