BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES * Controlled avalanche characteristic * Low forward voltage * Ultra fast recovery time * Glass passivated junction * Hermetically sealed package * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 * Very fast rectification diode e.g. for switch mode power supply Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME BYV27-200 BYV27-200 ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV27-200-TR BYV27-200-TAP 5000 per 10" tape and reel 5000 per ammopack 25 000 25 000 TYPE DIFFERENTIATION PACKAGE VR = 50 V; IF(AV) = 2 A VR = 100 V; IF(AV) = 2 A VR = 150 V; IF(AV) = 2 A VR = 200 V; IF(AV) = 2 A SOD-57 SOD-57 SOD-57 SOD-57 PARTS TABLE PART BYV27-50 BYV27-100 BYV27-150 BYV27-200 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Peak reverse voltage, non repetitive See electrical characteristics Reverse voltage = repetitive peak reverse voltage See electrical characteristics Peak forward surge current Repetitive peak forward current Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range PART SYMBOL VALUE UNIT BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-50 BYV27-100 BYV27-150 BYV27-200 VRSM VRSM VRSM VRSM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IF(AV) 55 110 165 220 50 100 150 200 50 15 2 V V V V V V V V A A A ER 20 mJ Tj = Tstg - 55 to + 175 C tp = 10 ms, half sine wave I(BR)R = 1 A, Tj = 175 C MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient Rev. 1.8, 04-Sep-12 TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, TL = constant On PC board with spacing 25 mm RthJA RthJA 45 100 K/W K/W Document Number: 86042 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage SYMBOL MIN. TYP. MAX. UNIT IF = 3 A VF - - 1.07 V IF = 3 A, Tj = 175 C VF - - 0.88 V VR = VRRM IR - - 1 A VRSM IR - - 100 A VR = VRRM, Tj = 165 C IR - - 150 A IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 25 ns Reverse current Reverse recovery time PART 120 2.5 l l IFAV - Average Forward Current (A) RthJA - Therm.Resist.Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 80 TL = constant 60 40 20 VR = VRRM half sine wave RthJA = 45 K/W l = 10 mm 2.0 1.5 1.0 0.5 RthJA = 100 K/W PCB: d = 25 mm 0 0.0 0 5 10 15 20 25 30 l - Lead Length (mm) 949526 0 Fig. 1 - Typ. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16383 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM 10 Tj = 175 C Tj = 25 C 1 0.1 0.01 0.001 0.0 16382 10 1 0.5 1.0 1.5 2.0 25 2.5 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 04-Sep-12 100 16384 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Reverse Current vs. Junction Temperature Document Number: 86042 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors 100 70 VR = VRRM f = 1 MHz CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 60 50 40 PR - Limit at 100 % VR 30 PR - Limit at 80 % VR 20 10 80 60 40 20 0 0 25 50 75 100 125 150 0.1 175 Tj - Junction Temperature (C) 16385 16386 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 04-Sep-12 Document Number: 86042 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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