BYV27-150-TR - Vishay Semiconductors

BYV27-50, BYV27-100, BYV27-150, BYV27-200

www.vishay.com Vishay Semiconductors

Rev. 1.8, 04-Sep-12 1Document Number: 86042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Ultra-Fast Avalanche Sinterglass Diode

MECHANICAL DATA

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg

FEATURES

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

• Glass passivated junction

• Hermetically sealed package

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Very fast rectification diode e.g. for switch mode power

supply



949539

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY

BYV27-200 BYV27-200-TR 5000 per 10" tape and reel 25 000

BYV27-200 BYV27-200-TAP 5000 per ammopack 25 000

PARTS TABLE

PART TYPE DIFFERENTIATION PACKAGE

BYV27-50 VR = 50 V; IF(AV) = 2 A SOD-57

BYV27-100 VR = 100 V; IF(AV) = 2 A SOD-57

BYV27-150 VR = 150 V; IF(AV) = 2 A SOD-57

BYV27-200 VR = 200 V; IF(AV) = 2 A SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Peak reverse voltage, non repetitive See electrical characteristics

BYV27-50 VRSM 55 V

BYV27-100 VRSM 110 V

BYV27-150 VRSM 165 V

BYV27-200 VRSM 220 V

Reverse voltage = repetitive peak reverse

voltage See electrical characteristics

BYV27-50 VR = VRRM 50 V

BYV27-100 VR = VRRM 100 V

BYV27-150 VR = VRRM 150 V

BYV27-200 VR = VRRM 200 V

Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A

Repetitive peak forward current IFRM 15 A

Average forward current IF(AV) 2A

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

I(BR)R = 1 A, Tj = 175 °C ER20 mJ

Junction and storage temperature range Tj = Tstg - 55 to + 175 °C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient l = 10 mm, TL = constant RthJA 45 K/W

On PC board with spacing 25 mm RthJA 100 K/W

BYV27-50, BYV27-100, BYV27-150, BYV27-200

www.vishay.com Vishay Semiconductors

Rev. 1.8, 04-Sep-12 2Document Number: 86042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

Fig. 1 - Typ. Thermal Resistance vs. Lead Length

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Reverse Current vs. Junction Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 3 AVF- - 1.07 V

IF = 3 A, Tj = 175 °C VF- - 0.88 V

Reverse current

VR = VRRM IR--1μA

VRSM IR- - 100 μA

VR = VRRM, Tj = 165 °C IR- - 150 μA

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 25 ns

0 5 10 15 20 25 30

120

RthJA - Therm.Resist.Junction/Ambient (K/W)

l - Lead Length (mm)

949526

100

= constant

IF - Forward Current (A)

0.001

0.01

0.1

100

0.0 0.5 1.0 1.5 2.0 2.5

VF - Forward Voltage (V)

16382

Tj = 175 °C

Tj = 25 °C

0.0

0.5

1.0

1.5

2.0

2.5

0 20 40 60 80 100 120 140 160 180

amb

- Ambient Temperature (°C)

16383

FAV

- Average Forward Current (A)

VR = VRRM

half sine wave

RthJA = 45 K/W

l = 10 mm

RthJA = 100 K/W

PCB: d = 25 mm

100

1000

25 50 75 100 125 150 175

Tj - Junction Temperature (°C)

16384

= V

RRM

IR - Reverse Current (A)

BYV27-50, BYV27-100, BYV27-150, BYV27-200

www.vishay.com Vishay Semiconductors

Rev. 1.8, 04-Sep-12 3Document Number: 86042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

25 50 75 100 125 150 175

16385

PR - Reverse Power Dissipation (mW)

Tj - Junction Temperature (°C)

VR = VRRM

PR - Limit

at 100 % VR

PR - Limit

at 80 % VR

100

0.1 1 10 100

- Reverse Voltage (V)

16386

- Diode Capacitance (pF)

f = 1 MHz

20543

3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

0.82 (0.032) max.

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Revision: 08-Feb-17 1Document Number: 91000

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