Philips Semiconductors General purpose double diode FEATURES Small piastic SMD package Switching speed: max. 50:'ns Genera! application Continuous reverse voltage: max. 200 V Repetitive peak reverse voltage: max. 250 V Repetitive peak forward current: max. 625 mA. APPLICATIONS e General purpose where high breakdown voitages. are required. Product specification BAV23S - DESCRIPTION PINNING The BAV235S consists of two general PIN DESCRIPTION purpose diodes connected in series 1 nod fabricated in planar technology, and anode encapsulated in the small plastic 2 cathode SMD SOT23 package. 3 common connection 2 1 ens) 3 | 3 MAM232 Marking code: Fig.1 Simplified outline (SQT23) and symbol. LIMITING VALUES in accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | min, | MAX. | UNIT Per diode Varna repetitive peak reverse voltage - 250 Vv Varo repetitive peak reverse voltage | series connection 00 Vv Vr continuous reverse voltage - 200 Vv Vr continuous reverse voltage series connection - 400 Vv le continuous forward current single diode loaded; see Fig.2; note 1 ~ 225 mA double diode loaded; see Fig.2; note 1 - 125 mA leRM repetitive peak forward current - 625 mA lesm non-repetitive peak forward square wave; T; = 25 C prior to surge; current see Fig.4 t=1s - 9 A t= 100 us - 3 A =10ms - 1.7 |A Prot total power dissipation Tamb = 25 C; note 1 - 250 mW Tstg storage temperature -65 | +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-165 Philips Semiconductors Product specification General purpose double diode BAV23S ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL | PARAMETER CONDITIONS [ wn, [ Max. [UNIT Per diode Ve forward voltage see Fig.3 ip = 100 mA - 1.0 |V Ir = 200 mA - 1.25 |V Ve forward voitage series connection; see Fig.3 l- = 100 mA - 20 |V l- = 200 MA - 25 |V In reverse current see Fig.5 VR =200V ~ 100 nA Va = 200 V; Tj = 150 C - 100 pA la reverse current series connection - Vr = 400 V - 100 nA Vr = 400 V; Tj = 150 C - 100 pA Ca diode capacitance f = 1 MHz; Vp = 0; see Fig.6 - 5 pF tre reverse recovery time _- when switched from Ir = 30 mA to - 50 ns In = 30 mA; A, = 100 Q; measured at |p = 3 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rin j-tp thermal resistance from junction to tie-point 360 KAW PRitn j-a thermal resistance from junction to ambient | note 1 500 KAW Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-166 Philips Semiconductors Product specification General. purpose double diode BAV23S GRAPHICAL DATA 300 600 IF (mA) Qo 100 200 Tamb (C) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current. as a function of ambient temperature. 'p (mA) 0 1 Ve (V) 2 (1) T = 150 C; typical values. (2) Tj =25 C; typical values. (3) T= 25 C; maximum values. Fig.3 Forward current as afunction of forward voltage. lFSm (A) to! 1 10 Based on square wave currents. T; = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. MBG703 108 tp (us) 104 1996 Sep 17 Philips Semiconductors Product specification General purpose double diode ~ BAV23S 107 (pA) 10 10 102 0 100 7, Cc) 200 (1) Va = 200 V; maximum values. (2) Vr = 200 V; typical values. Fig.5 Reverse current as a function of junction 1.0 (pF) 0.8 06 0.4 0.2 va f= 1 MHz; T; = 25 C, Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. COT 7 { ty tp & 1 | t 10% 7 = +t t Rg=S00 | T _) | SAMPLING F . ' TT OSCILLOSCOPE VeVptipxRg R= 50.2 : fs (1) [ | T val 4% MGASO? input signal output signat (1) IR=3 mA. Fig:7 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 1-168