IRF432 - Intersil Corporation - Datasheet.Directory

File Number

1572.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF430

4.5A, 500V, 1.500 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17415.

Features

• 4.5A, 500V

•r

DS(ON) = 1.500Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER PACKAGE BRAND

IRF430 TO-204AA IRF430

NOTE: When ordering, use the entire part number. G

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF430 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID4.5

3.0 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 18 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 300 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS,V

GS = 0V, TJ= 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS >I

D(ON) xr

DS(ON)MAX,V

GS = 10V (Figure 7) 4.5 - - A

Drain to Source On Resistance (Note 2) rDS(ON) ID = 2.5A, VGS = 10V (Figures 8, 9) - 1.3 1.500 Ω

Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.7A (Figure 12) 2.5 3.2 - S

Turn-On Delay Time td(ON) VDD = 250V, ID≈ 4.5A, RG = 12Ω, RL = 50Ω

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating

Temperature

-1117ns

Rise Time tr-1523ns

Turn-Off Delay Time td(OFF) -3553ns

Fall Time tf-1523ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID≈6.0A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate

Charge is Essentially Independent of Operating

Temperature

-2232nC

Gate to Source Charge Qgs - 3.5 - nC

Gate to Drain “Miller” Charge Qgd -11- nC

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 600 - pF

Output Capacitance COSS - 100 - pF

Reverse Transfer Capacitance CRSS -30- pF

Internal Drain Inductance LDMeasured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the

Source Lead, 6mm

(0.25in) from the Flange

and the Source Bonding

Pad

- 12.5 - nH

Thermal Resistance Junction to Case RθJC - - 0.83 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W

IRF430

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction Diode

- - 4.5 A

Pulse Source to Drain Current

(Note 3) ISDM - - 18 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 4.5A, VGS = 0V (Figure 13) - - 1.4 V

Reverse Recovery Time trr TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 180 370 760 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 0.96 2 4.3 µC

NOTES:

2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ= 25oC, L = 25mH, RG= 25Ω, peak IAS = 4.5A. See Figures 15, 16.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 100 15025

ID, DRAIN CURRENT (A)

125

ZθJC, TRANSIENT

1.0

0.1

0.01 10-2

10-5 10-4 10-3 0.1 1 10

t1, RECTANGULAR PULSE DURATION (s)

PDM

t1t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

SINGLE PULSE

0.02

0.05

0.2

0.5

0.1

0.01

THERMAL IMPEDANCE (oC/W)

IRF430

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE

ON RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

100

10001 10 100

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

TJ= MAX RATED

SINGLE PULSE

10µs

100µs

1ms

10ms

100ms

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000 300

ID, DRAIN CURRENT (A)

200

VGS = 4.5V

580µs PULSE TEST

VGS = 4V

VGS = 5V

VGS = 5.5V

VGS = 10V

2468010

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

VGS = 4.5V

VGS = 5V

VGS = 5.5V

VGS = 10V

VGS = 4V

0123405

ID(ON), ON-STATE DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

VDS > ID(ON) x rDS(ON) MAX

80µs PULSE TEST

DUTY CYCLE ≤2%

125oC

25oC

-55oC

ID, DRAIN CURRENT (A)

10 20025

rDS(ON), DRAIN TO SOURCE ON RESISTANCE

VGS = 20V

VGS = 10V

515

2.2

1.4

0.6

060-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAI TO SOURCE

ID = 1.5A

1.8

1.0

0.2 -40 -20 20 40 80 100 140120

VGS = 10V

ON RESISTANCE

IRF430

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.15

0.95

0.75

-40 40 80 120

BREAKDOWN VOLTAGE

ID = 250µA

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

2000

1600

1200

800

400

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

CISS

COSS

110 20 30 40 50

CRSS

ID, DRAIN CURRENT (A)

123405

gfs, TRANSCONDUCTANCE (S)

TJ = 125oC

TJ = 25oC

TJ = -55oC

80µs PULSE TEST

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

101234

TJ = 150oC

TJ = 25oC

80µs PULSE TEST

Qg(TOT), TOTAL GATE CHARGE (nC)

8162432040

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 4.5A

15 VDS = 100V

VDS = 250V

VDS = 400V

IRF430

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

Ig(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRF430

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IRF430