To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.6.00 Aug.27.2003 Features * * * * Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 4 4 D G 1 1 S 2 3 H7N1004LS 3 H7N1004LD Rev.6.00, Aug.27.2003, page 1 of 11 2 1 2 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current ID 30 A Note1 Drain peak current ID (pulse) 100 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 3 15 A 22.5 mJ 50 W Avalanche energy EAR Note 3 Note 2 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Rev.6.00, Aug.27.2003, page 2 of 11 H7N1004LD, H7N1004LS, H7N1004LM Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions 100 -- -- V ID = 10 mA, VGS = 0 V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 10 A VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 -- 2.5 V ID = 1 mA, VDS = 10 V Note 1 Static drain to source on state RDS(on) -- 25 35 m ID = 15 A, VGS = 10 V Note 1 -- 30 45 m ID = 15 A, VGS = 4.5 V Note 1 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage resistance Forward transfer admittance |yfs| 22 37 -- S ID = 15 A, VGS = 10 V Note 1 Input capacitance Ciss -- 2800 -- pF VDS = 10 V Output capacitance Coss -- 240 -- pF VGS = 0 Reverse transfer capacitance Crss -- 140 -- pF f = 1 MHz Total gate charge Qg -- 50 -- nC VDD = 50 V Gate to source charge Qgs -- 9 -- nC VGS = 10 V Gate to drain charge Qgd -- 11 -- nC ID = 30 A Turn-on delay time td(on) -- 23 -- ns VGS = 10 V, ID = 15 A Rise time tr -- 120 -- ns RL = 2 Turn-off delay time td(off) -- 70 -- ns Rg = 4.7 Fall time tf -- 9.5 -- ns Body-drain diode forward voltage VDF -- 0.9 -- V IF = 30 A, VGS = 0 Body-drain diode reverse recovery time trr -- 47 -- ns IF = 30 A, VGS = 0 diF/dt = 100 A/s Notes: 1. Pulse test Rev.6.00, Aug.27.2003, page 3 of 11 H7N1004LD, H7N1004LS, H7N1004LM Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 200 100 Drain Current I D (A) Channel Dissipation Pch (W) 80 60 40 20 30 10 0 s s 10 1 = DC 10 ms m (T Op s ( c = e 1s 25 ratio hot) C n ) 10 3 1 0.3 Operation in this area is 0.1 limited by RDS(on) 0 50 100 Case Temperature 150 200 0.02 0.1 Tc (C) Typical Output Characteristics 50 V DS = 10 V Pulse Test 40 30 3.5 V 20 10 Drain Current I D (A) 40 30 20 10 VGS = 3 V 0 3 30 0.3 1 10 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 4V 6V Ta = 25C 50 Pulse Test 10 V Drain Current I D (A) PW 2 4 6 8 10 Drain to Source Voltage V DS (V) Rev.6.00, Aug.27.2003, page 4 of 11 -25C 25C Tc = 75C 0 3 4 5 1 2 Gate to Source Voltage V GS (V) H7N1004LD, H7N1004LS, H7N1004LM Drain to Source Saturation Voltage V DS(on) (V) 1.0 Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VS. Gate to Source Voltage Pulse Test 0.8 0.6 I D = 20 A 0.4 10 A 0.2 5A Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 V GS = 4.5 V 20 10 V 10 5 0 5 10 15 1 20 Gate to Source Voltage VGS (V) 80 I D = 20 A 5, 10 A 60 40 V GS = 4.5 V I D = 20 A 5, 10 A 20 V GS = 10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc Rev.6.00, Aug.27.2003, page 5 of 11 (C) 5 10 20 50 Drain Current I D (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (m) Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 2 100 Tc = -25C 10 1 0.1 25C 75C V DS = 10 V Pulse Test 0.01 0.01 0.1 1 10 Drain Current I D (A) 100 H7N1004LD, H7N1004LS, H7N1004LM Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 Ciss 2000 1000 500 200 Coss 100 50 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C Crss VGS = 0 f = 1 MHz 20 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10 16 12 80 0 8 VDD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nC) Rev.6.00, Aug.27.2003, page 6 of 11 4 VDS 0 100 V GS = 10 V, V DD = 30 V PW = 5 s, duty 1% R G = 4.7 Switching Time t (ns) VGS 120 40 40 50 1000 20 Gate to Source Voltage V GS (V) Drain to source Voltage V DS (V) VDD = 25 V 50 V 160 100 V I D = 30 A 30 Switching Characteristics Dynamic Input Characteristics 200 20 Drain to Source Voltage V DS (V) 100 tr t d(off) t d(on) tf 10 1 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 H7N1004LD, H7N1004LS, H7N1004LM Maximum Avalanche Energy vs. Channel Temperature Derating EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage 0, -5 V V GS = 10 V 40 Repetitive Avalanche Energy Reverse Drain Current I DO (A) 50 30 5V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source Drain Voltage VSD 2.0 40 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 32 24 16 8 0 25 (V) Avalanche Test Circuit 50 75 100 Channel Temperature 125 150 Tch (C) Avalanche Waveform EAR = L V DS Monitor 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 Rev.6.00, Aug.27.2003, page 7 of 11 VDD H7N1004LD, H7N1004LS, H7N1004LM Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.03 ch - c(t) = s (t) * ch - c ch - c = 2.5C/ W, Tc = 25C 0.1 0.05 0.02 1 e 0.0 uls tp o h 1s 0.01 10 PDM PW T D= PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Rg 90% D.U.T. RL Vin Vin 10 V V DS = 30 V Vout 10% 10% 90% td(on) Rev.6.00, Aug.27.2003, page 8 of 11 tr 10% 90% td(off) tf H7N1004LD, H7N1004LS, H7N1004LM Package Dimensions * H7N1004LD As of January, 2003 4.44 0.2 10.2 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.2 0.86 +- 0.1 0.76 0.1 2.54 0.5 2.54 0.5 11.0 0.5 8.6 0.3 11.3 0.5 0.3 10.0 +- 0.5 (1.4) Unit: mm 2.49 0.2 0.4 0.1 Package Code JEDEC JEITA Mass (reference value) Rev.6.00, Aug.27.2003, page 9 of 11 LDPAK (L) -- -- 1.40 g H7N1004LD, H7N1004LS, H7N1004LM * H7N1004LS As of January, 2003 Unit: mm (1.5) 10.0 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.7 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 2.2 1.37 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 1.3 0.2 Package Code JEDEC JEITA Mass (reference value) Rev.6.00, Aug.27.2003, page 10 of 11 LDPAK (S)-(1) -- -- 1.30 g H7N1004LD, H7N1004LS, H7N1004LM * H7N1004LM As of January, 2003 Unit: mm (2.3) 10.0 7.8 7.0 2.49 0.2 1.7 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.37 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.4 0.1 0.3 5.0 +- 0.5 1.3 0.2 Package Code JEDEC JEITA Mass (reference value) Rev.6.00, Aug.27.2003, page 11 of 11 LDPAK (S)-(2) -- -- 1.35 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com (c) 2003. 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