BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. a 1997 Fairchild Semiconductor Corporation Max Units *BC817-25 / BC817-40 350 2.8 357 mW mW/C C/W BC817-25 / BC817-40 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)CES Collector-Base Breakdown Voltage IC = 100 A, IE = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 20 V VCB = 20 V, TA = 150C 100 5.0 nA A ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, VCE = 1.0 V - 25 - 40 IC = 500 mA, VCE = 1.0 V IC = 500 mA, IB = 50 mA VBE(on) Base-Emitter On Voltage IC = 500 mA, VCE = 1.0 V 160 250 40 400 600 0.7 V 1.2 V Typical Pulsed Current Gain vs Collector Current 500 400 V CE = 5V 125 C 300 25 C 200 - 40 C 100 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 2 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.6 = 10 0.5 0.4 125 C 0.3 25C 0.2 - 40 C 0.1 0 0.01 I C 0.1 1 - COLLECTOR CURRENT (A) 3 BC817-25 / BC817-40 NPN General Purpose Amplifier (continued) (continued) VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25C 0.6 125 C 0.4 VCE = 5V 0.2 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25C 0.6 125 C 0.4 VCE = 5V 0.2 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P I CBO- COLLECTOR CURRENT (nA) VCB = 40V 10 1 0.1 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 Collector-Base Capacitance vs Collector-Base Voltage 40 30 20 10 0 0 8 12 16 20 24 28 Pr 38 Power Dissipation vs Ambient Temperature 350 500 V CE = 10V 400 300 200 100 0 4 V CB - COLLECTOR-BASE VOLTAGE (V) Gain Bandwidth Product vs Collector Current P D - POWER DISSIPATION (mW) h FE - GAIN BANDWIDTH PRODUCT (MHz) 100 C OBO - COLLECTOR-BASE CAPACITANCE (pF) P 38 Collector-Cutoff Current vs Ambient Temperature 25 1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 BC817-25 / BC817-40 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. 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