BC817-25 / BC817-40
BC817-25
BC817-40
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BC817-25 / BC817-40
PDTotal Device Dissip ation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Re sistan ce, Junction to Ambient 357 °C/W
Symbol Parameter Value Units
VCEO Co llector-Emitter Voltage 45 V
VCES Collector-Base Volta ge 50 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Curre nt - Continuous 1.5 A
TJ, Tstg Operating and Storage Junctio n Temperature Range -55 to +150 °C
SOT-23
C
E
B
Mark: 6B. / 6C.
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation
BC817-25 / BC817-40
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(
BR
)
CEO Co llector-Emitter Bre akdown Volta ge IC = 10 mA, IB = 045V
V
(
BR
)
CES Co llector-Base Breakd own Voltage IC = 100
µ
A, IE = 0 50 V
V
(
BR
)
EBO Emitter-Base Breakdo wn Voltage IE = 10
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 20 V
VCB = 20 V, TA = 150°C100
5.0 nA
µ
A
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 25
- 40
IC = 500 mA, VCE = 1.0 V
160
250
40
400
600
VCE(sat)Collector-Emitte r Saturatio n Vo l t age IC = 500 mA, IB = 50 mA 0.7 V
VBE(on)Base-Emi tter On Voltage IC = 500 mA, VCE = 1.0 V 1.2 V
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.01 0.1 1 3
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLECTOR CURRENT (A )
V
- COLLECT OR-EMITTER VOLT AGE (V)
CESAT
C
β = 10
125 ºC
- 40 ºC
25°C
Typical Pulsed Current Gain
vs Collector Current
0.001 0.01 0.1 1 2
0
100
200
300
400
500
I - COLLECTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 ºC
25 °C
C
V = 5V
CE
125 °C
BC817-25 / BC817-40
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter ON Voltage vs
Collector Current
P38
0.001 0.01 0.1 1
0.2
0.4
0.6
0.8
1
I - COLL ECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
125 ºC
- 40 ºC
25°C
Base-Emitter ON Voltage vs
Collect or Current
P
0.001 0.01 0.1 1
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V - BASE-E MITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
125 ºC
- 40 ºC
25°C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
º
CBO
Collector-Base Capacitance
vs Collector-Ba se Voltage
Pr 38
0 4 8 12 16 20 24 28
0
10
20
30
40
V - COLLECT O R-BASE VOLTAGE (V)
C - COLLECTOR-BA SE CAPACITANCE (pF)
CB
OBO
Gain Bandwidth Product
vs Collector Current
1 10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - GAIN BANDWIDTH PRODUCT (MHz)
C
FE
V = 10V
CE
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERAT URE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
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This datasheet contains the design specifications for
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