© Semiconductor Components Industries, LLC, 2001
April, 2020 − Rev. 3
1Publication Order Number:
HGT1S12N60A4DS/D
SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the
low on−state conduction loss of a bipolar transistor. The much lower
on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49335. The diode
used in anti−parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
Formerly Developmental Type TA49337.
Features
•>100 kHz Operation 390 V, 12 A
•200 kHz Operation 390 V, 9A
•600 V Switching SOA Capability
•Typical Fall Time 70 ns at TJ = 125°C
•Low Conduction Loss
•Temperature Compensating Saber™ Model
•Related Literature
♦TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
•These are Pb−Free Devices
C
E
G
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MARKING DIAGRAM
See detailed ordering and shipping information on page 8 of
this data sheet.
ORDERING INFORMATION
G
E
C
D2PAK−3
(TO−263, 3−LEAD)
CASE 418AJ
JEDEC STYLE
$Y&Z&3&K
12N60A4D
TO−247−3LD
SHORT LEAD
CASE 340CK
JEDEC STYLE
TO−220−3LD
CASE 340AT
JEDEC ALTERNATE
VERSION
C
G
E
GE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
12N60A4D = Specific Device Code
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter Symbol
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS Unit
Collector to Emitter Voltage BVCES 600 V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
54
23
A
A
Collector Current Pulsed (Note 1) ICM 96 A
Gate to Emitter Voltage Continuous VGES ±20 V
Gate to Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C, Figure 2 SSOA 60 A at 600 V
Power Dissipation Total at TC = 25°C PD167 W
Power Dissipation Derating TC > 25°C 1.33 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, see Tech Brief 334.
TL
Tpkg
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V 600 − − V
Collector to Emitter Leakage Current ICES VCE = 600 V TJ = 25°C− − 250 mA
TJ = 125°C− − 2.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 12 A, VGE = 15 V TJ = 25°C−2.0 2.7 V
TJ = 125°C−1.6 2.0 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250 mA, VCE = 600 V −5.6 −V
Gate to Emitter Leakage Current IGES VGE = ±20 V − − ±250 nA
Switching SOA SSOA TJ = 150°C, RG = 10 W, VGE = 15 V,
L = 100 mH, VCE = 600 V
60 − − A
Gate to Emitter Plateau Voltage VGEP IC = 12 A, VCE = 300 V −8−V
On−State Gate Charge Qg(ON) IC = 12 A, VCE = 300 V VGE = 15 V −78 96 nC
VGE = 20 V −97 120 nC
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 25°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
−17 −ns
Current Rise Time trI −8−ns
Current Turn−Off Delay Time td(OFF)I −96 −ns
Current Fall Time tfI −18 −ns
Turn−On Energy (Note 3) EON1 −55 −mJ
Turn−On Energy (Note 3) EON2 −160 −mJ
Turn−Off Energy (Note 2) EOFF −50 −mJ
Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 125°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
−17 −ns
Current Rise Time trI −16 −ns
Current Turn−Off Delay Time td(OFF)I −110 170 ns
Current Fall Time tfI −70 95 ns
Turn−On Energy (Note 3) EON1 −55 −mJ
Turn−On Energy (Note 3) EON2 −250 350 mJ
Turn−Off Energy (Note 2) EOFF −175 285 mJ
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
Diode Forward Voltage VEC IEC = 12 A −2.2 −V
Diode Reverse Recovery Time trr IEC = 12 A, dIEC/dt = 200 A/ms−30 −ns
IEC = 1 A, dIEC/dt = 200 A/ms−18 −ns
Thermal Resistance Junction To Case RqJC IGBT − − 0.75 °C/W
Diode − − 2.0 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 24.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
50
10
0
40
20
30
25
60
50
700
40
0
10
20
300200100
0
50
60
30
70
1
10 3
300
302010
500
100
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
915
0
2
10
16
50
125
175
300
tSC
ISC
20
250
13
4
6
8
12
14
18
75
100
150
200
225
275
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (°C)
10075 125 150
VGE = 15 V
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
600500400
ISC, PEAK SHORT CIRCUIT CURRENT (A)
VCE = 390 V, RG = 10 W, TJ = 125°C
10 11 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V)
fMAX, OPERATING FREQUENCY (kHz)
TC VGE
75°C 15 V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75°C/W, SEE NOTES
TJ = 125°C, RG = 10 W, L = 500 mH, VCE = 390 V
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
TJ = 150°C, RG = 10 W, VGE = 15 V, L = 200 mH
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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4
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
0
0
4
8
1.5
16
20
12
24
4
8
16
12
20
24
0
EON2, TURN−ON ENERGY LOSS (mJ)
500
300
400
200
600
0
700
64 8
100
2
300
0
50
200
100
250
350
400
150
10
11
12
13
14
15
16
17
18
0
4
16
12
8
20
32
28
24
EOFF
, TURN−OFF ENERGY LOSS (mJ)
td(ON)I, TURN−ON DELAY TIME (ns)
trI, RISE TIME (ns)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
2 2.50.5 1 0 1.5 2 2.50.5 1
1412 1610 2220 2418 64821412 1610 2220 2418
64821412 1610 2220 2418 64821412 1610 2220 2418
DUTY CYCLE < 0.5%, VGE = 12 V
PULSE DURATION = 250 msDUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = 125°C, VGE = 12 V, VGE = 15 V
TJ = 25°C, VGE = 12 V, VGE = 15 V
TJ = 125°C, VGE = 12 V or 15 V
TJ = 25°C, VGE = 12 V or 15 V
RG = 10 W, L = 500 mH, VCE = 390 V RG = 10 W, L = 500 mH, VCE = 390 V
TJ = 125°C or TJ = 25°C, VGE = 12 V
RG = 10 W, L = 500 mH
VCE = 390 V
RG = 10 W, L = 500 mH, VCE = 390 V
TJ = 25°C or TJ = 125°C, VGE = 15 V
TJ = 25°C or TJ = 125°C, VGE = 12 V
TJ = 25°C or TJ = 125°C, VGE = 15 V
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
TO EMITTER CURRENT
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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5
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
95
85
90
115
105
110
100
10
30
20
50
70
40
60
80
90
0
50
100
13711
150
200
14
250
616
2
14
0010
4
10
40 50
6
8
12
16
0
0.2
0.4
50
0.6
1.0
12525
1.2
0.8
0.1 10
1
5
10
tfI, FALL TIME (ns)
6482
VGE, GATE TO EMITTER VOLTAGE (V)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
td(OFF)I, TURN−OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
RG, GATE RESISTANCE (W)
1412 1610 2220 2418 648
21412 1610 2220 2418
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
VGE = 12 V, VGE = 15 V, TJ = 125°C
VGE = 12 V, VGE = 15 V, TJ = 25°C
RG = 10 W, L = 500 mH, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Figure 13. TRANSFER CHARACTERISTIC Figure 14. GATE CHARGE WAVEFORMS
Figure 15. TOTAL SWITCHING LOSS vs.
CASE TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs.
GATE RESISTANCE
TC, CASE TEMPERATURE (°C)
RG = 10 W, L = 500 mH, VCE = 390 V
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 125°C, VGE = 12 V or 15 V
TJ = 25°C, VGE = 12 V or 15 V
RG = 10 W, L = 500 mH, VCE = 390 V
ICE, COLLECTOR TO EMITTER
CURRENT (A)
TJ = −55°C
TJ = 125°C
TJ = 25°C
IG(REF) = 1 mA, RL = 25 W, TC = 25°C
VCE = 600 V VCE = 400 V
VCE = 200 V
ICE = 24 A
ICE = 12 A
ICE = 6 A
TJ = 125°C L = 500 mH,
VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
ICE = 24 A
ICE = 12 A
ICE = 6 A
100 1000
10075 150
981012 15 20 30 70 8060
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
C, CAPACITANCE (nF)
05 510 15 20 25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY 1 MHz
8
1.9 10 12
2.0
2.2
2.1
11 13
2.3
2.4
0.50
0
4
6
8
10
2
14
12
60
40
20
01118
70
50
30
10
2
80
90
300 700
200
10
5
25
35
45
55
15
20
30
40
50
60
65
900
300
200
100
0
50
400
VCE, COLLECTOR TO EMITTER
VOLTAGE (V)
trr, RECOVERY TIMES (ns)
trr, RECOVERY TIMES (ns)
Qrr, REVERSE RECOVERY
CHARGE (nc)
VGE, GATE TO EMITTER VOLTAGE (V)
VEC, FORWARD VOLTAGE (V) IEC, FORWARD CURRENT (A)
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 20. RECOVERYTIMES vs.
FORWARD CURRENT
Figure 21. RECOVERY TIMES vs. RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs. RATE OF
CHANGE OF CURRENT
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
IEC, FORWARD CURRENT (A)
600 800 1000500400 300 700
200 900600 800 1000500400
1.0 1.5 2.0 2.5 34 129567 10
91514 16
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms, TJ = 25°C
125°C 25°C
ICE = 18 A
ICE = 12 A
ICE = 6 A
CIES
COES
CRES
DUTY CYCLE < 0.5%
PULSE DURATION = 250 ms
dIEC/dt = 200 A/ms
125°C trr
125°C tb
125°C ta
25°C trr
25°C tb
25°C ta
IEC/dt = 12 A, VCE = 390 V
125°C tb
125°C ta
25°C ta
25°C tb
VCE = 390 V
300
250
150
350
125°C ICE = 12 A
125°C ICE = 6 A
25°C ICE = 12 A
25°C ICE = 6 A
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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7
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
10−2
10−1
100
10−510−310−210−1100101
10−4
t1
t2
PD
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
0.10
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
t1, RECTANGULAR PULSE DURATION (s)
ZqJC, NORMALIZED THERMAL RESPONSE
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
+
−
HGTP12N60A4D
DUT
DIODE TA49371
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
VDD = 390 V
L = 500 mH
RG = 10 W
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT Figure 25. SWITCHING TEST WAVEFORMS
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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8
HANDLING PRECAUTIONS FOR IGBTS
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON2).
The allowable dissipation (PD) is defined by PD = (TJM − TC)
/ RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
ORDERING INFORMATION
Part Number Package Brand Shipping
†
HGTG12N60A4D TO−247 12N60A4D 450 Units / Tube
HGTP12N60A4D TO−220AB 12N60A4D 800 Units / Tube
HGT1S12N60A4DS TO−263AB 12N60A4D 800 Units / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO−263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13818G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−220−3LD
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13851G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−3LD SHORT LEAD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
D
2
PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
DATE 25 OCT 2019
SCALE 1:1
XX
XXXXXXXXX
AWLYWWG
GENERIC MARKING DIAGRAMS*
XXXXXX = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
W = Week Code (SSG)
M = Month Code (SSG)
G = Pb−Free Package
AKA = Polarity Indicator
IC Standard
XXXXXXXXG
AYWW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Rectifier
AYWW
XXXXXXXXG
AKA
SSG
XXXXXX
XXYMW
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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98AON56370E
DOCUMENT NUMBER:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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