TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with TIP100, TIP101 and TIP102 80 W at 25C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP106 V CBO TIP107 TIP106 Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V -60 VCEO TIP107 Continuous collector current -80 -100 TIP105 Collector-emitter voltage (IB = 0) UNIT -60 TIP105 Collector-base voltage (IE = 0) VALUE -80 V -100 VEBO -5 IC -8 V A ICM -15 A IB -1 A Ptot 80 W Ptot 2 W 1/2LIC2 10 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.64 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP105 IC = -30 mA IB = 0 (see Note 5) TYP MAX TIP106 -80 TIP107 -100 V VCE = -30 V IB = 0 TIP105 -50 VCE = -40 V IB = 0 TIP106 -50 VCE = -50 V IB = 0 TIP107 -50 VCB = -60 V IE = 0 TIP105 -50 VCB = -80 V IE = 0 TIP106 -50 VCB = -100 V IE = 0 TIP107 -50 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -3 A transfer ratio VCE = -4 V IC = -8 A Collector-emitter cut-off current Collector cut-off current Emitter cut-off current UNIT -60 -8 1000 (see Notes 5 and 6) A A mA 20000 200 Collector-emitter IB = -6 mA IC = -3 A saturation voltage IB = -80 mA IC = -8 A VCE = -4 V IC = -8 A (see Notes 5 and 6) -2.8 V IE = -8 A IB = 0 (see Notes 5 and 6) -3.5 V Base-emitter voltage Parallel diode forward voltage -2 (see Notes 5 and 6) -2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance CC Thermal capacitance of case MIN TYP MAX UNIT 1.56 C/W 62.5 C/W 0.9 J/C resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN MAX UNIT td Delay time 35 ns tr Rise time IC = -8 A IB(on) = -80 mA IB(off) = 80 mA 300 ns ts Storage time VBE(off) = 5 V RL = 5 tp = 20 s, dc 2% 900 ns tf Fall time 1.3 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AA 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = -4 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 -10 TCS135AB -2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 -1*5 -1*0 TC = -40C TC = 25C TC = 100C -0*5 -0*5 IC - Collector Current - A -1*0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3*0 -2*5 TC = -40C TC = 25C TC = 100C -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 -10 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS135AA t p = 100 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 5 ms, d = 0.1 = 10% DC Operation -10 -1*0 TIP105 TIP106 TIP107 -0*1 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.