APT150GN120J 1200V TYPICAL PERFORMANCE CURVES APT150GN120J (R) E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. C G ISOTOP (R) * 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability S OT 22 7 "UL Recognized" file # E145592 C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT150GN120J VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 215 I C2 Continuous Collector Current @ TC = 110C 99 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 450 Switching Safe Operating Area @ TJ = 150C 450A @ 1200V Total Power Dissipation 625 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 6mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 5.0 5.8 6.5 1.4 1.7 2.1 Units 1200 (VCE = VGE, I C = 6mA, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 2.08 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 100 2 600 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A TBD Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor Volts nA 11-2005 V(BR)CES MIN Rev B Characteristic / Test Conditions 050-7608 Symbol APT150GN120J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf Eon1 Eon2 tr td(off) tf Eon1 Eon2 Eoff pF V nC 450 A ns 675 85 RG = 1.0 7 22 TJ = +25C 5 UNIT 430 I C = 150A 4 MAX 70 65 mJ 27 6 15 Inductive Switching (125C) 55 VCC = 800V 65 VGE = 15V Turn-off Delay Time 175 RG = 1.0 7 44 Turn-on Switching Energy (Diode) 55 ns 780 I C = 150A Current Fall Time Turn-off Switching Energy 800 VCC = 800V Current Rise Time Turn-on Switching Energy 9.5 VGE = 15V VGE = 15V Turn-on Switching Energy (Diode) Turn-on Delay Time Gate Charge 55 Current Fall Time td(on) 400 Inductive Switching (25C) Turn-off Delay Time Turn-off Switching Energy 500 f = 1 MHz 15V, L = 100H,VCE = 1200V Current Rise Time Eoff VGE = 0V, VCE = 25V TJ = 150C, R G = 4.3 7, VGE = Turn-on Delay Time Turn-on Switching Energy 9500 I C = 150A Switching Safe Operating Area TYP Capacitance VCE = 600V Qge SSOA MIN 23 TJ = +125C mJ 35 66 22 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) 0.20 RJC Junction to Case (DIODE) N/A VIsolation WT Torque RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT C/W Volts 1.03 oz 29.2 gm 10 Ib*in 1.1 N*m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 050-7608 Rev B 11-2005 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 300 V GE IC, COLLECTOR CURRENT (A) TJ = 125C TJ = 175C 150 100 50 0 200 TJ = -55C 150 100 TJ = 25C 50 TJ = 125C 0 5V 100 4.5V 50 4V FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250 150 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE 5.5V 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 300 250 J VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 150A C T = 25C 14 0 200 3.5 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 300A 3.0 2.5 IC = 150A 2.0 IC = 75A 1.5 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 3.5 3 IC = 300A 2.5 IC = 150A 2 1.5 IC = 75A 1 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300 1.15 1.10 1000 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.0 400 600 800 GATE CHARGE (nC) 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 11-2005 TJ = 25C 200 6.5, 10 &15V 6V 300 Rev B TJ = -55C 050-7608 IC, COLLECTOR CURRENT (A) = 15V 350 250 0 APT150GN120J 400 VGE = 15V 50 40 30 20 VCE = 800V 10 T = 25C, or 125C J RG = 1.0 L = 100H 0 APT150GN120J 1000 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 60 800 600 VGE =15V,TJ=125C VGE =15V,TJ=25C 400 200 VCE = 800V RG = 1.0 L = 100H 0 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 400 250 RG = 1.0, L = 100H, VCE = 800V 350 200 250 tf, FALL TIME (ns) tr, RISE TIME (ns) 300 TJ = 25 or 125C,VGE = 15V 200 150 100 TJ = 125C, VGE = 15V 150 100 TJ = 25C, VGE = 15V 50 50 0 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current G 100,000 TJ = 125C 80,000 60,000 40,000 20,000 TJ = 25C 0 J 120,000 80,000 Eoff,300A 40,000 0 Eon2,150A Eoff,150A Eon2,75A Eoff,75A 0 5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance TJ = 125C 30,000 20,000 10,000 TJ = 25C 120,000 Eon2,300A 160,000 G 40,000 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) 11-2005 Rev B 050-7608 = 800V V CE = +15V V GE T = 125C = 800V V CE = +15V V GE R = 1.0 0 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 200,000 0 50,000 V = 800V CE V = +15V GE R = 1.0 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 120,000 RG = 1.0, L = 100H, VCE = 800V 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 0 V = 800V CE V = +15V GE R = 1.0 Eon2,300A G 100,000 80,000 60,000 40,000 Eoff,300A 20,000 Eoff,150A Eon2,150A 0 Eon2,75A Eoff,75A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 20,000 500 P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 10,000 100 Coes 50 APT150GN120J 500 450 400 350 300 250 200 150 100 Cres 50 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.30 D = 0.9 0.25 0.20 0.7 0.15 0.5 0.10 0.3 Note: PDM ZJC, THERMAL IMPEDANCE (C/W) 0.35 t1 t2 0.05 0 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 Power (watts) 0.133 0.0221 0.025 0.569 30.8 Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 10 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 5 1 T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0 max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC G 20 70 120 170 220 270 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 11-2005 0.0457 Rev B RC MODEL 050-7608 Junction temp. (C) FMAX, OPERATING FREQUENCY (kHz) 30 APT150GN120J Gate Voltage 10% APT100DQ120 TJ = 125C td(on) tr V CE IC V CC Collector Current 90% 5% 5% 10% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125C td(off) 90% Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 11-2005 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) * Emitter 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) Rev B 050-7608 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) * Emitter Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.