Feb.1999
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
•IT (AV) Average on-state current .......... 400A
•VRRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
•VDRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
•DOUBLE ARMS
•Insulated Type
(DZ Type)
(DZ Type)
(Bold line is connective bar.)
16
36
50
60
A
1
K
1
A
2
K
2
24
36
26
G
2
K
2
G
1
K
1
3–φ6.5
4–M8
24 24 24
2635443523
80±
0.2
80±
0.2
180
Tab#110, t=0.5
9
36
50
9
(DZ)
A
1
CR
1
K
1
K
2
A
2
CR
2
K
2
G
2
K
1
G
1
K
2
G
2
A
1
CR
1
K
1
K
2
A
2
CR
2
G
1
K
1
K
2
G
2
A
1
CR
1
K
1
K
2
A
2
CR
2
G
1
K
1
(CZ)
(PZ)
(UZ)
K
2
G
2
A
1
CR
1
K
1
K
2
A
2
CR
2
G
1
K
1
LABEL
not Recommend
for New Design
Feb.1999
24
1200
1350
960
1200
1350
960
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=66°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
620
400
8000
2.7 × 105
200
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
1100
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=1200A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case, per 1/2 module
Case to fin, conductive grease applied, per 1/2 module
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
60
60
1.4
—
3.0
—
100
0.1
0.05
—
H
800
960
640
800
960
640
2H
1600
1700
1280
1600
1700
1280
not Recommend
for New Design
Feb.1999
0
10
0
10
1
10
–1
10
–2
10
–3
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
4
10
3
10
2
10
1
10
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=4.0A
P
GM
=10W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
3.0W
T
j
=25°C
0.6
7
5
3
2
7
5
3
2
7
5
3
2
2.61.0 1.4 1.8 2.2
T
j
=125°C
705030207532
0
10000
101 100
8000
6000
4000
2000
753275327532
0.10
0
7532
0.02
0.04
0.06
0.08
00 400
500
400
50 150 200 300
300
200
100
100 250 350
180°
120°
90°
θ
360° 60°
130
50 0 200 400100
60
300
70
80
90
100
110
120
θ=30° 60° 90°
θ
360°
180°120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
θ=30°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V) CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
AVERAGE ON-STATE POWER
DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CASE TEMPERATURE (°C)
TIME (s)GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
130
50 0 400 600200
60
70
80
90
100
110
120
θ=30° 60° 90° 120° 180° 270°
DC
θ
360°
800
00 400 600200
200
400
600 θ=30° 60°
180°
270°
360°
θ
120°
90°
DC
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE POWER
DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
