2N6989 2N6990 CRYSTALONCS 2805 Veterans Highway Suite 14 Multiple (Quad) NPN Silicon Dual-in-Line and Flatpack Small-Signal Transistors Ronkonkoma, N.Y. 11779 _. designed for general-purpose switching circuits and OC to VHF amplifier applications. Similar ta 2N2222AJAN electrical devices. Complementary devices available (2N6987-'88). eypocosen MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vde 1a Coltactor-Base Voltage VoB 75 Vde ' Emitter-Base Voltage VEB 6.0 Vde CASE 632-08, STYLE 1 Collector Current Continuous Ic 800 mAdc (TO-116) 2N6989 Total Device Total Power Dissipation Pp Watts @ Tp = 28C 2N69B9 15 2N6990 0.4 merc Derate above 25C 2N6g89 ae 2N6990 , CASE 607-04, STYLE 1 Operating and Storage Junction Ty. Tstg 65 to +200 C (CERAMIC) 2N6988 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS(1) Collector-Emitter Breakdown Voltage V(BR}CEO 50 _ Vde (Ic = 10 mAdc) Collector-Base Breakdown Voltage V(BR)CBO 75 Vde (Ig = 10 pAde} Emitter-Base Breakdown Voltage Vi(BR)EBO 6.0 _ Vde {Ip = 10 pAdc) Collector Cutoff Current {cBo (cp = 60 Vde) a 10 nAde (Vop 60 Vdc, Ta = 150C) _ 10 Ade Emitter-Cutoff Current 'EBO _ 10 nAdc (Vpe = 4.0 Vee) (contnved) (1) Pulsed. Pulse Width = 300 ys. Duty Cycle + 2 0%.ELECTRICAL CHARACTERISTICS con nued (Ta = 25C unless otherwise noted.) Characteristic ON CHARACTERISTICS(1) T Symbol Max Unit OC Current Gain (VcE = 10 Vde, Io = 0.1 mAdc) (VCE = 10 Vde, Io = 1.0 mAdc) (VcE = 10 Vde, Ig = 10 mAdc}{7) (VCE = 10 Vdo, Ig = 150 mAdc)(1) (cE = 10 Vde. I = 500 mAde)(1) (Woe = 10 Vde, i = 1.0 mAde, Ta = 55C) bE 50 75 100 100 30 35 325 300 Caliector-Emitter Saturation Voltage (ig = 150 mAdc, Ig = 15 mAdc) (Ig = 500 mAdc, Ig = 50 mAdc) VCE(sat) 0.3 1.0 Vde Base-Emitter Saturation Voltage (ig = 150 mAdc, Ig = 15 mAdc) (Ig = 500 mAdc, ig = 50 mAdc) VBE(sat) 12 2.0 Vde DYNAMIC CHARACTERISTICS Smail-Signal Current Gain (VcE = 10 Vde, Ic = 1.0 mAde, f = 1.0 kHz) Ne 50 Smali-Signa! Current Transter Ratio, Magnitude (VCE = 10 Vdc. Ic = 20 mAdc, f= 100 MHz) Dte| 2.5 80 Output Capacitance (Vop = 10 Vdc, f= 0.1 to 1.0 MHz) Cobo 8.0 pF Input Capacitance (VBE = 0.5 Vdc, f = 0.1 ta 1.0 MHz) Cibo 25 pF SWITCHING CHARACTERISTICS Turn-On Time iper 12MRB44636B) 35 ns Turn-Otf Time (per 12MRB44836B) toff 300 ns Transistor to Transistor Resistance ((MTT| = 500 Vdc) {ATT 4910 ohms ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vog = 30 Vde Py = 1.5 W 2N6989, 0.5 W 2N6990 Characteristics Tested Symbol Initial and End Point Limits Min Max Unit Collector Cutoff Current (Vop = 60 Vdc) ICBO 10 nAdc DC Current Gain(t) (Vg = 10 Vde. i = 150 nAde) FE 100 300 Delta from Pre-Gurn-in Measured Values Min | Delta Collector Cutoff Current AicBO +100 or =5.0 whichever is greater % of Initial Value nAdc Delta DC Current Gain(") AnFE +18 % of Initia Value (1) Pulsed Pulse Width . 300 ps Duty Cycle = 2.0%