General Description Features Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, Motors drives and other applications where switching losses are significant portion of the total losses. Repetitive Reverse Voltage : VRRM= 400V Low Forward Voltage : VF(typ.) = 1.0V Average Forward Current : IF(Av.)=100A @TC=100 Ultra-Fast Reverse Recovery Time : trr(typ.) = 35ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Isolation Type Package Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply E301932 SOT-227 Equivalent Circuit Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Conditions Symbol Rating Unit VRRM 400 V 200 A 100 A IFSM 2000 A I2t 16.7* 103 A2s Junction Temperature TJ -40 ~ 150 Storage Temperature Tstg -40 ~ 125 - 1.45 N.m Typical Including Screws - 1.45 N.m @AC 1 minutes, Tc = 125oC Visol 2,500 V Visol 1,500 V - 30 g Repetitive Peak Reverse Voltage o TC=25 C Average Forward Current Surge(non-repetitive) Forward TC=100oC Current I2t for Fusing Resistive Load IF(AV) One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj= 25 Start Mounting Torque Terminal Torque Isolation Voltage(Terminal to Case) Isolation Voltage(Diode to Diode) o @DC1 minutes, Tc = 125 C Weight February 2014.Version 3.0 1 MagnaChip Semiconductor Ltd. MPSC2N100U40 400V FRD Module MPSC2N100U40 400V FRD Module @Tc = 25oC(unless otherwise specified) Characteristics Conditions Cathode Anode Breakdown Voltage IR=100uA Diode Maximum Forward Voltage IF=100A Symbol Min. Typ. Max. Unit VR 400 - - V - 1.0 1.3 - 0.9 - - - 1.0 - 8 - TC=25 VFM TC=125 Maximum Reverse Leakage Current Tc=100, VRRM applied Maximum Reverse Recovery Current IF =100A,VR=50V di/dt = -200A/uS TC=125 IRRM TC=25 V IRM A 18 TC=125 Diode Reverse Recovery Time TC=25 IF =100A,VR=50V di/dt = -200A/uS mA - 45 - - 90 - Min. Typ. Max. - - 0.34 - - 0.20 trr TC=125 ns Thermal Characteristics Characteristics Conditions Symbol Junction to Case(Per Diode) Thermal Resistance(Isolation Type) February 2014.Version 3.0 /W Rth(j-c) Junction to Case(Module) 2 Unit MagnaChip Semiconductor Ltd. MPSC2N100U40 400V FRD Module Electrical Characteristics TC=25 TC=125 Reverse Recovery Time[ns] Forward Current,IF[A] 250 200 150 100 50 50 25 0 0 0.0 0.5 1.0 200 1.5 400 Forward Voltage Drop,VF[V] Fig.1 Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig.2 Typical Reverse Recovery Time Vs. -di/dt 250 Average Forward Current,IF(AVG)[A] Thermal Response Zthjc[/W] 1 0.1 0.01 1E-3 1E-4 1E-5 600 di/dt[A/us] TC=25 1E-4 1E-3 0.01 0.1 1 150 DC 100 50 0 10 0 20 40 60 80 100 120 140 160 Case Temperatute, Tc[] Rectangular Pulse Duration Time[sec] Fig.3 Transient Thermal Impedance(Zthjc) Characteristics February 2014.Version 3.0 200 Fig.4 Forward Current Derating Curve 3 MagnaChip Semiconductor Ltd. MPSC2N100U40 400V FRD Module 75 300 MPSC2N100U40 400V FRD Module Package Dimension SOT-227 Dimensions are in millimeters, unless otherwise specified February 2014.Version 3.0 4 MagnaChip Semiconductor Ltd. MPSC2N100U40 400V FRD Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. February 2014.Version 3.0 5 MagnaChip Semiconductor Ltd.