© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev.6 1Publication Order Number:
2N6027/D
2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as RBB, h, IV, and IP by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,
pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Supplied
in an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automatic
insertion equipment.
Features
Programmable − RBB, h, IV and IP
Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (RG = 10 kW)
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PUTs
40 VOLTS, 300 mW
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
K
G
A
TO−92 (TO−226AA)
CASE 029
STYLE 16
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Cathode
Anode
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2N602x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
2N
602x
AYWW G
G
(Note: Microdot may be in either location)
2N6027, 2N6028
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Power Dissipation*
Derate Above 25°CPF
1/qJA 300
4.0 mW
mW/°C
DC Forward Anode Current*
Derate Above 25°CIT150
2.67 mA
mA/°C
DC Gate Current* IG"50 mA
Repetitive Peak Forward Current
100 ms Pulse Width, 1% Duty Cycle
20 ms Pulse Width, 1% Duty Cycle*
ITRM 1.0
2.0
A
Non−Repetitive Peak Forward Current
10 ms Pulse Width ITSM 5.0 A
Gate to Cathode Forward Voltage* VGKF 40 V
Gate to Cathode Reverse Voltage* VGKR *5.0 V
Gate to Anode Reverse Voltage* VGAR 40 V
Anode to Cathode Voltage* (Note 1) VAK ±40 V
Capacitive Discharge Energy (Note 2) E 250 mJ
Power Dissipation (Note 3) PD300 mW
Operating Temperature TOPR −50 to +100 °C
Junction Temperature TJ−50 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended O p e r a t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 W
Anode negative, RGA = open
2. E = 0.5 CV2 capacitor discharge energy limiting resistor and repetition.
3. Derate current and power above 25°C.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 75 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Maximum Lead Temperature for Soldering Purposes
(t1/16 from case, 10 seconds maximum) TL260 °C
2N6027, 2N6028
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3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Fig. No. Symbol Min Typ Max Unit
Peak Current*
(VS = 10 Vdc, RG = 1 MW) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 kW) 2N6027
2N6028
2,9,11 IP
1.25
0.08
4.0
0.70
2.0
0.15
5.0
1.0
mA
Offset Voltage*
(VS = 10 Vdc, RG = 1 MW) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 kW) (Both Types)
1 VT0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
V
Valley Current*
(VS = 10 Vdc, RG = 1 MW) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 k W) 2N6027
2N6028
(VS = 10 Vdc, RG = 200 W) 2N6027
2N6028
1,4,5 IV
70
25
1.5
1.0
18
18
150
150
50
25
mA
mA
Gate to Anode Leakage Current *
(VS = 40 Vdc, T A = 25°C, Cathode Open)
(VS = 40 Vdc, T A = 75°C, Cathode Open)
IGAO
1.0
3.0 10
nAdc
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted) IGKS 5.0 50 nAdc
Forward Voltage*
(IF = 50 mA Peak) (Note 4) 1,6 VF 0.8 1.5 V
Peak Output Voltage*
(VG = 20 Vdc, CC = 0.2 mF) 3,7 Vo6.0 11 V
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 mF) 3 tr 40 80 ns
*Indicates JEDEC Registered Data
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
K
G
A
Programmable Unijunction
with Program" Resistors
R1 and R2
1A −
VAK
+VB
IA
R1
R1 + R2
R1
R2
− VS = VB
VAK
IA
+
VS
RG
RG = R1 R2
R1 + R2
Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
1B −
Adjust
for
Turn−on
Threshold
100 k
1.0%
2N5270
VB
0.01 mF
20
R
R
RG = R/2
VS = VB/2
(See Figure 1)
+
IP (SENSE)
100 mV = 1.0 nA
Scope
Put
Under
Test
CC
510 k 16 k
27 k
20 W
vo
+VB
+V
Vo
6.0 V
0.6 V
tf
t
IC − Electrical Characteristics
VA
VS
VF
VV
−VP
IA
IF
IV
IP
VT = VP − VS
IGAO
Figure 1. Electrical Characterization
Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit
2N6027, 2N6028
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4
VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)
I , VALLEY CURRENT ( A)
V
100
10
1000
1051520
500
5
10
0−50 +50 +100
100
RG = 10 kW
100 kW
1 MW
−25 +25 +75
RG = 10 kW
100 kW
1 MW
m
TYPICAL VALLEY CURRENT BEHAVIOR
IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (V)
0.1
0.05
0.02
0.01
0.2
0.5
1.0
0.020.01 0.05 0.1
10
20
5.0
0
15
1002030
25
TA = 25°C
5.0 15 25
CC = 0.2 mF
1000 pF
V , PEAK OUTPUT VOLTAGE (V)
o
TA = 25°C
(SEE FIGURE 3)
I , VALLEY CURRENT ( A)
Vm
2.0
5.0
10
0.2 2.00.5 1.0 5.0 35 40
A
K
G
K
A
G
E
P
N
N
P
Circuit Symbol
B2
B1
R1
R2
R1
R1 + R2
RBB = R1 + R2
h =
Equivalent Circuit
with External Program"
Resistors R1 and R2
Typical Application
CC
RT
K
AG
R2
R1
+
Figure 4. Effect of Supply Voltage Figure 5. Effect of Temperature
Figure 6. Forward Voltage Figure 7. Peak Output Voltage
Figure 8. Programmable Unijunction
V
P
, PEAK FORWARD VOLTAGE (V)
2N6027, 2N6028
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5
VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)
I , PEAK CURRENT ( A)
P
1.0
0.5
0.3
0.2
0.1
2.0
3.0
5.0
10
105.0 15 20
1.0
0.5
20
0.2
0.1
2.0
50
5.0
10
0−50 +50 +100
100
TA = 25°C
(SEE FIGURE 2)
RG = 10 kW
100 kW
VS = 10 V
(SEE FIGURE 2)
1.0 MW
−25 +25 +75
RG = 10 kW
100 kW
1.0 MW
m
I , PEAK CURRENT ( A)
Pm
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)
I , PEAK CURRENT ( A)
P
0.1
0.05
0.03
0.02
0.01
0.2
0.3
0.5
1.0
105.0 15 20
0.1
0.05
2.0
0.02
0.01
0.2
5.0
0.5
1.0
0−50 +50 +100
10
TA = 25°C
(SEE FIGURE 2)
RG = 10 kW
100 kW
VS = 10 V
(SEE FIGURE 2)
1.0 MW
−25 +25 +75
RG = 10 kW
100 kW
1.0 MW
m
I , PEAK CURRENT ( A)
Pm
2N6028
0.07
0.7
Figure 9. Effect of Supply Voltage and RGFigure 10. Effect of Temperature and RG
Figure 11. Effect of Supply Voltage and RGFigure 12. Effect of Temperature and RG
ORDERING INFORMATION
U.S. European Equivalent ShippingDescription of T O−92 Tape Orientation
2N6027
2N6027RL1
2N6027RL1G
5000 Units / Box N/A − Bulk
2N6027G
2N6028
2N6028G
2N6027RLRA
2000 / Tape & Reel Round side of TO−92 and adhesive tape visible
2N6027RLRAG
2N6028RLRA
2N6028RLRAG
2N6028RLRM
2000 / Tape & Ammo Box
Flat side of TO−92 and adhesive tape visible
2N6028RLRMG
2N6028RLRP Round side of TO−92 and adhesive tape visible
2N6028RLRPG
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*The “G’’ suffix indicates Pb−Free package available.
2N6027, 2N6028
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6
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
CASE 029−11
ISSUE AL
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
2N6027/D
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