KST-9106-000 1
STC401
NPN Silicon Transistor
Features
Low saturation switching application
Voltage regulator application
Low saturation : VCE(SAT)=0.4V Max.
High Voltage : VCEO=60V Min.
Ordering Information
Type NO. Marking Package Code
STC401 STC401 TO-92
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9106-000 2
STC401
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 80 V
Collector-Emitter voltage VCEO 60 V
Emitter-base voltage VEBO 5 V
Collector current IC 1 A
Collector dissipation PC 625 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter breakdown voltage BVCEO I
C=1mA, IB=0 60 - - V
Collector cut-off current ICBO V
CB=60V, IE=0 - - 0.1
µA
Emitter cut-off current IEBO V
EB=5V, IC=0 - - 0.1
µA
VCE=2V, IC=100mA 200 - 400
DC current gain hFE * VCE=2V, IC=1A 80 - -
-
Base-Emitter on voltage VBE(ON) V
CE=2V, IC=500mA - - 1.2 V
Collector-Emitter saturation voltage VCE(sat) I
C=500mA, IB=50mA - - 0.4 V
Collector output capacitance Cob V
CB=10V, IE=0, f=1MHz - 10 - pF
Transition frequency fT V
CB=10V, IC=50mA - 160 - MHz
* hFE rank : 200~400 Only
KST-9106-000 3
STC401
Electrical Characteristic Curves
Fig. 3 hFE-IC Fig. 4 Cob - VCB
Fig. 1 PC - Ta
Fig. 5 IC - VCE Fig. 6 IC - VCE
Fig. 2 VCE - IC
KST-9106-000 4
STC401
Electrical Characteristic Curves
Fig. 7 fT - IC