IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A * High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G TO-3PF TO-3PF E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C SGF80N60UF 600 20 80 40 220 110 45 -55 to +150 -55 to +150 Units V V A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2001 Fairchild Semiconductor Corporation Typ. --- Max. 1.1 40 Units C/W C/W SGF80N60UF Rev. A SGF80N60UF October 2001 Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 2790 350 100 ---- pF pF pF ------------------- 23 50 90 50 570 590 1160 30 55 150 160 630 940 1580 175 25 60 14 --130 150 --1500 --200 250 --2000 250 40 90 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V IC = 80A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance (c)2001 Fairchild Semiconductor Corporation VCC = 300 V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C VCE = 300 V, IC = 40A, VGE = 15V Measured 5mm from PKG SGF80N60UF Rev. A SGF80N60UF Electrical Characteristics of IGBT T 120 Common Emitter T C = 25 20V 12V 100 Collector Current, IC [A] Collector Current, I C [A] Common Emitter VGE = 15V TC = 25 TC = 125 15V 200 VGE = 10V 150 100 50 80 60 40 20 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, V CE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 50 4 VCC = 300V Load Current : peak of square wave Common Emitter VGE = 15V 40 80A 3 Load Current [A] Collector - Emitter Voltage, VCE [V] SGF80N60UF 250 40A 2 IC = 20A 30 20 1 10 Duty cycle : 50% TC = 100 Power Dissipation = 26W 0 0 0 30 60 90 120 0.1 150 1 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25 Common Emitter T C = 125 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 1000 Frequency [Khz] Case Temperature, T C [] 16 12 8 80A 4 40A IC = 20A 0 16 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2001 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGF80N60UF Rev. A 500 Common Emitter V GE = 0V, f = 1MHz T C = 25 4000 Common Emitter V CC = 300V, VGE = 15V IC = 40A T C = 25 T C = 125 Cies 3000 Switching Time [ns] Capacitance [pF] 3500 2500 2000 1500 Coes Ton Tr 100 1000 Cres 500 0 20 1 10 30 1 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 2000 5000 Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 TC = 125 Common Emitter V CC = 300V, V GE = 15V IC = 40A T C = 25 T C = 125 Toff Switching Loss [uJ] Switching Time [ns] 1000 Tf 100 Tf Eoff Eon 1000 Eoff 100 20 1 10 80 1 10 Gate Resistance, R G [ ] 80 Gate Resistance, R G [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 500 2000 Common Emitter VCC = 300V, V GE = 15V RG = 5 TC = 25 TC = 125 1000 Switching Time [ns] Switching Time [ns] 70 Gate Resistance, R G [ ] Collector - Emitter Voltage, V CE [V] 100 Ton Common Emitter V CC = 300V, V GE = 15V R G = 5 T C = 25 T C = 125 Toff Tf Toff 100 Tf Tr 10 20 10 20 30 40 50 60 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2001 Fairchild Semiconductor Corporation 70 80 10 20 30 40 50 60 70 80 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGF80N60UF Rev. A SGF80N60UF 4500 Eoff 100 Common Emitter V CC = 300V, V GE = 15V RG = 5 T C = 25 T C = 125 Eon Gate - Emitter Voltage, VGE [ V ] 1000 Switching Loss [uJ] SGF80N60UF 15 3000 Common Emitter RL = 7.5 TC = 25 12 9 300 V 6 V CC = 100 V 200 V 3 10 0 0 10 20 30 40 50 60 70 80 0 30 Collector Current, IC [A] 60 90 120 150 180 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 500 IC MAX. (Pulsed) 50us IC MAX. (Continuous) Collector Current, I C [A] Collector Current, IC [A] 100 100us 1 10 DC Operation Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 1 0.1 0.3 100 10 Safe Operating Area o V GE =20V, TC=100 C 1 10 100 1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response [Zthjc] 10 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A SGF80N60UF Package Dimension TO-3PF 4.50 0.20 5.50 0.20 15.50 0.20 2.00 0.20 2.00 0.20 2.00 0.20 22.00 0.20 1.50 0.20 16.50 0.20 2.50 0.20 0.85 0.03 23.00 0.20 10 10.00 0.20 (1.50) 2.00 0.20 14.50 0.20 16.50 0.20 2.00 0.20 4.00 0.20 3.30 0.20 +0.20 0.75 -0.10 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] +0.20 0.90 -0.10 5.50 0.20 26.50 0.20 14.80 0.20 3.00 0.20 o3.60 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H4