(R) FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * -9.4A, -60V, RDS(on) = 0.185 @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! D G! G S I-PAK D-PAK FQD Series FQU Series G D S ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQD11P06 / FQU11P06 -60 - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * dv/dt PD - Pulsed TL -9.4 A -5.95 A -37.6 A 30 V (Note 2) 160 mJ (Note 1) -9.4 A (Note 1) 3.8 -7.0 2.5 mJ V/ns W 38 0.3 -55 to +150 W W/C C 300 C (Note 1) (Note 3) Power Dissipation (TC = 25C) TJ, TSTG Units V - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 3.28 Units C/W RJA RJA Thermal Resistance, Junction-to-Ambient * -- 50 C/W Thermal Resistance, Junction-to-Ambient -- 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2004 Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 / FQU11P06 QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -60 -- -- V -- -0.07 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS IGSSF IGSSR VDS = -60 V, VGS = 0 V -- -- -1 A VDS = -48 V, TC = 125C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.7 A -- 0.15 0.185 gFS Forward Transconductance VDS = -30 V, ID = -4.7 A -- 4.9 -- S -- 420 550 pF -- 195 250 pF -- 45 60 pF -- 6.5 25 ns -- 40 90 ns -- 15 40 ns -- 45 100 ns -- 13 17 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25 (Note 4, 5) VDS = -48 V, ID = -11.4 A, VGS = -10 V (Note 4, 5) -- 2.0 -- nC -- 6.3 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A ISM -- -- -37.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -9.4 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/s (Note 4) -- 83 -- ns -- 0.26 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -11.4A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : -ID, Drain Current [A] 1 10 -ID , Drain Current [A] 1 10 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 150 0 10 25 -55 Notes : 1. VDS = -30V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics -IDR , Reverse Drain Current [A] 0.6 VGS = - 10V 0.4 VGS = - 20V 0.2 Note : TJ = 25 0.0 10 0 10 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 150 20 30 40 10 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitance [pF] 1 10 -1 0 800 Coss Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 600 400 Crss 200 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2004 Fairchild Semiconductor Corporation -VGS, Gate-Source Voltage [V] RDS(on) [], Drain-Source On-Resistance 0.8 10 VDS = -30V 8 VDS = -48V 6 4 2 Note : ID = -11.4 A 0 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev.C4, August 2004 (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 -BVDSS, (Normalized) Drain-Source Breakdown Voltage FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 -ID, Drain Current [A] -ID, Drain Current [A] 8 100 s 1 ms 1 10 10 ms DC 0 10 Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area Z JC(t), Thermal Response 75 100 125 150 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C ( t ) = 3 .2 8 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 10 0 .0 2 -1 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2004 Fairchild Semiconductor Corporation Rev.C4, August 2004 FQD11P06 / FQU11P06 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp (c)2004 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev.C4, August 2004 FQD11P06 / FQU11P06 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt (c)2004 Fairchild Semiconductor Corporation Rev.C4, August 2004 D-PAK MIN0.55 0.91 0.10 9.50 0.30 0.50 0.10 0.76 0.10 0.50 0.10 1.02 0.20 2.30TYP [2.300.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 0.20 6.10 0.20 9.50 0.30 6.60 0.20 (5.34) (5.04) (1.50) (0.90) 2.30 0.20 (0.70) 2.30TYP [2.300.20] (0.50) 2.30 0.10 0.89 0.10 MAX0.96 (4.34) 2.70 0.20 0.80 0.20 0.60 0.20 (0.50) 6.10 0.20 5.34 0.30 0.70 0.20 6.60 0.20 0.76 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 / FQU11P06 Package Dimensions (Continued) I-PAK 2.30 0.20 6.60 0.20 5.34 0.20 0.76 0.10 2.30TYP [2.300.20] 0.50 0.10 16.10 0.30 6.10 0.20 0.70 0.20 (0.50) 9.30 0.30 MAX0.96 (4.34) 1.80 0.20 0.80 0.10 0.60 0.20 (0.50) 2.30TYP [2.300.20] 0.50 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 / FQU11P06 Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I11