FSV1045V 10 A, 45 V Ultra-Low VF Schottky Rectifier Features Description * Ultra-Low Forward Voltage Drop: - 0.41 V Typical at 10 A, TA = 25C - 0.44 V Maximum at 10 A, TA = 25C * Low Thermal Resistance * Very Low Profile: Typical Height of 1.1 mm * RoHS Compliant * Halogen Free * Meets MSL 1 per JESD22-A111 Full-Body Solder Immersion The FSV1045V schottky rectifier offers break-through size and performance. The device is optimized for mobile charger applications. It sinks only 18 mA reverse current at high temperature and provides forward voltage drop of 0.18 V at 1 A operating current in a charger design. All this capability is packed into a small, flat-lead, TO-277 package, optimized for space-constrained applications. The FSV1045V supports a typical Z height of 1.1 mm. It is RoHS compliant and halogen free. It is also qualified for a wave soldering process. Applications 3 * Mobile Charger * Solar Panel * Reverse Polarity Protection 2 TO-277 1 3 Cathode Anode 1 Anode 2 Ordering Information Part Number Top Mark Package Packing Method FSV1045V FSV1045V TO-277 3L Tape and Reel (c) 2014 Fairchild Semiconductor Corporation FSV1045V Rev. 1.1 www.fairchildsemi.com FSV1045V -- 10 A, 45 V Ultra-Low VF Schottky Rectifier May 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 45 V VRWM Working Peak Reverse Voltage 45 V VRMS RMS Reverse Voltage 32 V 45 V 10 A 300 A VR DC Blocking Voltage IO Average Rectified Output Current(2) TL = 105C Non-Repetitive Peak Forward Surge Current IFSM (3) CJ Typical Junction Capacitance 820 pF TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG VR = 4 V, 1 MHz Notes: 1. All tests conducted at TA = TJ = 25C unless otherwise noted. 2. Mounted on 30 mm x 30 mm FR4 PCB. 3. Pulse condition: 8.3 ms single half-sine wave. Test method is compliant with MIL standard. (MIL-STD-750E) Thermal Characteristics(4) Values are at TA = 25C unless otherwise noted. Symbol RJA JL Minimum Maximum Land Pattern Land Pattern Parameter Junction-to-Ambient Thermal Resistance 100 40 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Anode 15 12 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 Unit C/W C/W Note: 4. The thermal resistances (RJA & JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper (c) 2014 Fairchild Semiconductor Corporation FSV1045V Rev. 1.1 Figure 2. Maximum Land Pattern of 2 oz Copper www.fairchildsemi.com 2 FSV1045V -- 10 A, 45 V Ultra-Low VF Schottky Rectifier Absolute Maximum Ratings(1) Values are at TA = 25C unless otherwise noted. Symbol VBR Parameter Breakdown Voltage Conditions IT = 500 A IF = 1 A VF Forward Voltage Drop IF = 1 A TA = 125C IF = 10 A IR Maximum Leakage (c) 2014 Fairchild Semiconductor Corporation FSV1045V Rev. 1.1 V = VRWM Typ. Max. 45 TA = 25C IF = 10 A Min. Unit V 0.28 0.41 0.44 0.18 0.36 0.39 TA = 25C 0.065 0.220 TA = 125C 19 32 V mA www.fairchildsemi.com 3 FSV1045V -- 10 A, 45 V Ultra-Low VF Schottky Rectifier Electrical Characteristics 100000 10 o 1 Reverse Current, IR[uA] Forward Current, IF[A] TA= 150 C o TA= 125 C o TA= 25 C 0.1 T = 85oC A o TA= -55 C 0.01 10000 1000 o o TA=85 C TA=125 C 100 o 10 TA=25 C 1 0.1 0.01 1E-3 0.0 1E-3 0.1 0.2 0.3 0.4 0.5 o TA=-55 C 10 15 Forward Voltage, VF[V] 30 35 40 45 12 Average Current, [A] Junction Capacitance, CJ[pF] 25 Figure 4. Typical Reverse Characteristics 10000 1000 jl (30mm x 30mm Pad) 10 8 jl (Min. Pad) 6 ja (30mm x 30mm Pad) 4 2 1 10 0 100 Reverse Voltage, VR[V] Figure 5. Typical Junction Capacitance Peak Forward Surge Current, IFSM[A] 20 Reverse Voltage, VR[V] Figure 3. Forward Current Characteristics 100 o TA=150 C ja (Min. Pad) 0 25 50 75 100 125 150 o Ambient / Lead Temperature, [ C] 175 Figure 6. Forward Current Derating Curve 350 300 250 200 150 100 50 0 0 20 40 60 80 100 Number of Cycles Figure 7. Surge Current Derating Curve (c) 2014 Fairchild Semiconductor Corporation FSV1045V Rev. 1.1 www.fairchildsemi.com 4 FSV1045V -- 10 A, 45 V Ultra-Low VF Schottky Rectifier Typical Performance Characteristics B A D 6.65 6.35 6.15 5.67 1.40 1.10 (2X) 4.65 MIN 4.63 4.25 1.45 MIN 4.15 MIN 1.97 TOP VIEW 0.01 0.63 0.43 (2X) SEATING PLANE C 2.75 LAND PATTERN RECOMMENDATION 0.40 0.23 (0.35) 1.20 1.00 FRONT VIEW D D 1.15 MIN 1.00 4.90 4.23 4.15 2.25 3.25 1.95 1.25 0.90 2.20 2.00 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE REFERENCE: JEDEC TO-277 B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D DOES NOT COMPLY TO JEDEC STANDARD VALUE. E. DRAWING FILENAME: MKT-TO277A03rev4 0.913 3.680 (0.25) BOTTOM VIEW 0.60 DAP OPTION 4.75 MAX 3.81 BOTTOM VIEW - DAP OPTION TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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