FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1045V Rev. 1.1
May 2015
FSV1045V
10 A, 45 V Ultra-Low VF Schottky Rectifier
Features
Ultra-Low Forward Voltage Drop:
- 0.41 V Typical at 10 A, TA = 25°C
- 0.44 V Maximum at 10 A, TA = 25°C
Low Thermal Resistance
Very Low Profile: Typical Height of 1.1 mm
RoHS Compliant
Halogen Free
Meets MSL 1 per JESD22-A111 Full-Body Solder
Immersion
Applications
Mobile Charger
Solar Panel
Reverse Polarity Protection
Ordering Information
Part Number Top Mark Package Packing Method
FSV1045V FSV1045V TO-277 3L Tape and Reel
Anode 2
Anode 1
3
Cathode
Description
The FSV1045V schottky rectifier offers break-through
size and performance. The device is optimized for mobile
charger applicatio ns. It sinks only 18 mA reverse current
at high temperature and provides forward voltage drop of
0.18 V at 1 A operating current in a charger design.
All this capability is packed into a small, flat-lead, TO-277
package, optimized for space-constrained applications.
The FSV1045V sup port s a typica l Z heigh t of 1.1 mm. It is
RoHS compliant and hal ogen fre e. It is also quali fied fo r a
wave soldering proces s.
1
3
TO-277
2
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1045V Rev. 1.1 2
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and stressing the parts to these levels is n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. All tests conducted at TA = TJ = 25°C unless otherwi s e noted.
2. Mounted on 30 mm x 30 mm FR4 PCB.
3. Pulse condition: 8.3 ms single half-sine wave. Test method is compliant with MIL standard. (MIL-STD-750E)
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 45 V
VRWM Working Peak Reverse Voltage 45 V
VRMS RMS Reverse Voltage 32 V
VRDC Blocking Voltage 45 V
IOAverage Rectified O utput Current(2) TL = 105°C 10 A
IFSM Non-Repetitive Peak Forward Surge Current(3) 300 A
CJTypical Junction Capacitance VR = 4 V, 1 MHz 820 pF
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Minimum
Land Pattern Maximum
Land Pattern Unit
RθJA Junction-to-Ambient Thermal Resistance 100 40 °C/W
ψJL
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode 15 12
°C/W
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode 65
Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper
F
S
F
S
F
S
F
S
F
S
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1045V Rev. 1.1 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VBR Breakdown Voltage IT = 500 μA45 V
VFForward Voltage Drop
IF = 1 A TA = 25°C0.28
V
IF = 10 A 0.41 0.44
IF = 1 A TA = 125°C0.18
IF = 10 A 0.36 0.39
IRMaximum Leakage V = VRWM TA = 25°C 0.065 0.220 mA
TA = 125°C1932
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1045V Rev. 1.1 4
Typical Performance Characteristics
Figure 3. Forward Current Characteristics Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance Figure 6. Forward Current Derating Curve
Figure 7. Surge Current Derating Curve
1E-3
0.01
0.1
1
10
0.00.10.20.30.40.5
TA= 150oC
TA= 125oC
TA= 85oC
TA= 25oC
TA= -55oC
Forward Voltage, VF[V]
Forward Current, I F[A]
10 15 20 25 30 35 40 45
1E-3
0.01
0.1
1
10
100
1000
10000
100000
TA=150oC
TA=125oC
TA=25oC
TA=85oC
Reverse Current, IR[uA]
Reve rse Voltage, VR[V]
TA=-55oC
110100
100
1000
10000
Junction Capacitance, CJ[pF]
Reverse Voltage, VR[V]
0 255075100125150175
0
2
4
6
8
10
12
ψjl (30mm x 30mm Pad)
θja (30mm x 30mm Pad)
Average Current, [A]
Ambient / Lead Temperat ure, [oC]
θja (Min. Pad)
ψjl (Min. Pad)
0 20406080100
0
50
100
150
200
250
300
350
Peak Forward Surge Current, IFSM[A]
Number of Cycles
1.15 MIN
4.15 MIN
1.97
1.45 MIN
4.65 MIN
2.75
1.00
(0.35)
1.20
1.00
0.40
0.23
0.01
SEATING
PLANE
C
6.65
6.35
6.15
5.67
D
4.63
4.25
1.40
1.10
(2X)
0.63
0.43
(2X)
AB
2.25
1.95
D
4.15
3.25 2.20
2.00
1.25
0.90
D
4.90
4.23
(0.25)
3.680
0.913
4.75 MAX
0.60
3.81
DAP OPTION
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE REFERENCE: JEDEC TO-277
B. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH, AND TIE BAR
EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D
DOES NOT COMPLY TO JEDEC
STANDARD VALUE.
E. DRAWING FILENAME: MKT-TO277A03rev4
TOP VIEW
LAND PATTERN RECOMMENDATION
BOTTOM VIEW - DAP OPTION
FRONT VIEW
BOTTOM VIEW
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I77
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