- 846 -
0.020(0.51)
0.015(0.37)
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
0.024(0.61)
0.018(0.45)
0.080(2.05)
0.070(1.78)
0.041(1.05)
0.047(0.89)
0.120(3.05)
0.104(2.65)
0.006(0.15)
0.001(0.013)
0.043(1.10)
0.035(0.89)
MMBD7000
Dual Surface Mount Switching Diode
Voltage Range
75 Volts
350m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: KJH
Weight: 0.008 gram (approx.)
SOT-23
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Symbol MMBD7000 Units
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 mA
Average Rectifier Output Current (Note 1) Io 150 mA
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S IFSM 2.0
1.0 A
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance Junction to Ambient Air
(Note 1) RθJA 357 K/W
Operating and Storage Temperature Range TJ, TSTG -65 to + 150 OC
Electrical Characteristics
Type Number Symbol Min Max Units
Reverse Breakdown Voltage (Note 3) IR=100uA
V(BR) 75
-
V
Forward Voltage IF=1.0mA
IF= 10mA
IF = 50mA
IF=150mA
VF
0.55
0.67
0.75
-
0.70
0.82
1.10
1.25 V
Peak Reverse Current VR=50V
VR=100V
VR=50V, TJ=125℃
VR=20V
IR
-
1.0
3.0
100
25
uA
nA
Junction Capacitance VR=0, f=1.0MHz Cj
-
2.0 pF
Reverse Recovery Time (Note 2) trr
-
4.0 nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
3. Test Period < 3000uS.
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RATINGS AND CHARACTERISTIC CURVES (MMBD7000)
FIG.1- FORWARD CHARACTERISTICS FIG.2- LEAKAGE CURRENT VS JUNCTION
TEMPERATURE
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
0.01
0.1
1
10
100
1000
01 2
0 100 200
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I , LEAKAGE CURRENT (nA)
R
T, JUNCTION TEMPERATURE ( C)
j
1000
100
10
1
10000
V =20V
R
