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© 1998
MOS FIEL D EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark ★ shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 1.2 Ω MAX . (VGS = 10 V, ID = 3.75 A)
•Avalanche cap abi lity rating s
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) ID(DC) ±7.5 A
Drain Current (pulse) Note1 ID(pulse) ±30 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 70 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 7.5 A
Single Avalanche Energy Note2 EAS 37.5 mJ
Diode Recovery dv/dt Note3 dv/dt 3.5 V/ns
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/
µ
s, TA = 25°C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3116 TO-220AB
2SK3116-S TO-262
2SK3116-ZJ TO-263
Data Sheet D13339EJ2V0DS
2
2SK3116
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHRACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100
µ
A
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 3.75 A 2.0 S
Drain to Source On-st ate Resi st ance RDS(on) VGS = 10 V, ID = 3.75 A 0.9 1.2 Ω
Input Capacit ance Ciss VDS = 10 V 1100 pF
Output Capacit ance Coss VGS = 0 V 200 pF
Reverse Transf er Capaci t ance Crss f = 1 MHz 20 pF
Turn-on Delay Time td(on) VDD = 150 V, ID = 3.75 A 18 ns
Rise Time trVGS = 10 V 15 ns
Turn-off Del a y Tim e td(off) RG = 10 Ω50 ns
Fall Time tfRL = 50 Ω15 ns
Total Gate Charge QGVDD = 450 V 26 nC
Gate to Source Charge QGS VGS = 10 V 6 nC
Gate to Drain Charge QGD ID = 7.5 A 10 nC
Body Diode Forward Voltage VF(S-D) IF = 7. 5 A, VGS = 0 V 1.0 V
Reverse Recovery T ime Trr IF = 7.5 A, VGS = 0 V 1.6
µ
s
Reverse Recovery Charge Qrr di/dt = 50 A/
µ
s7.6
µ
C
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→
0
V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG. R
G
= 10 Ω
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 µs
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10%
0
0
90%
90%
90%
V
GS
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
Data Sheet D13339EJ2V0DS 3
2SK3116
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10 4020 30
5
15
20
10
0
25
6 V
VGS = 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
151050
100
10
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= 125˚C
75˚C
T
ch
= 25˚C
−25˚C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
˚C
V
GS(off)
- Gate Cut-off Voltage - V
−50 0 50 100 150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0 10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= −25
˚C
25
˚C
75
˚C
125
˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance - Ω
1.0
0515
0
3.0 Pulsed
I
D
= 4.0 A7.5 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
1.0
10 100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - Ω
2.0
0
3.0
V
GS
= 10 V
20 V
Pulsed
Data Sheet D13339EJ2V0DS
4
2SK3116
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50 150
R
DS (on)
- Drain to Source On-State Resistance - Ω
2.0
00 100−50 T
ch
- Channel Temperature -
˚C
3.0
1.0
V
GS
= 10 V
4.0
4.0 A
Pulsed
I
D
= 7.5 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.51.00.50
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
1000100101.0
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1 1 10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
Ω
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0 10 100
t
rr
- Reverse Recovery Time - ns
0.1
I
D
- Drain Current - A
10000
1000
100
10
di/dt = 50 A/ µs
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
01282032
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 7.5 A
V
GS
V
DD
= 450 V
300 V
150 V
V
DS
Data Sheet D13339EJ2V0DS 5
2SK3116
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
08020 40 60 100 140120 160
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
30
50
70
FORWARD BIAS SAFE OPERATING AREA
10 100 1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
P o w er Dissipation Limited
100 µs
10 ms
1 ms
100
ms
PW = 10 µs
I
D(pulse)
I
D(DC)
3 ms
30 ms
T
C
= 25˚C
Single Pulse
DC
R
DS(on)
Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - ˚C/W
100 m 1 10 100 100010 m1 m10010
100
10
1
0.1
0.01
Rth(ch-A) =
83.3˚C/W
Rth(ch-C) =
1.79˚C/W
µµ
★
★★
Data Sheet D13339EJ2V0DS
6
2SK3116
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100 µ1 m 10 m
100
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1.0
10
0.1
10 µ
R
G
= 25 Ω
V
DD
= 150 V
V
GS
= 20 → 0 V
Starting T
ch
= 25
˚C
EAS = 37.5 mJ
I
AS
= 7.5 A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75 150125
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
50 10025
V
DD
= 150 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 7.5 A
0
20
40
60
80
100
120
Data Sheet D13339EJ2V0DS 7
2SK3116
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut)
3) TO-263 (MP-25ZJ)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10.6 MAX.
10.0 TYP. 3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
4
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
EQUIVALENT CIRCUIT
Body
Diode
Source (S)
Drain (D)
Gate (G)
★
2SK3116
M8E 00. 4
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
