2N4060-2N4227 Numerical Index aie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Sit = = = hes GE | oe) REPLACE. | PAGE Po |B] Ty | Ves | Vee |= hre @ le Veeisan @ Ic 2) _ le TYPE ETS] ment | numper | USE 5 gy AN eel Bl Tal =la @ 25C} S| C | (volts) | (volts) |S | (min) (max) >] (volts) 5 3 5/3 2N4.060 S|] P| Mps6516/ 5-113 AFC] 0.25W] A] 150 30 30] 0 45} 165 1.0M 0.7 10M 45|/E 2N4061 S]) Py) MPS6517) 5-113 AFC] 0.25W) AJ] 150 30 30] 0 90) 330 1.0M 0.7 LOM S90, E 2N4062 S| P| MPS6518] 5-113 AFC] 0.25W] A] 150 30 30] O} 180] 660 1.0M 0.7 10M 180] EF 2N4063 S| N LPA 10W|] C] 200 450 350] 0 40] 160] 0.024 15M] E 2N4064 S| N LPA low] C} 200 300 250] 0 407 160} 0.024 15M] E BN Oe Field Effect Transistors, see Table on Page 1-166 2N4068 S|] N RFA 500M] A] 175 150 150] 0 30 30M 50M] T 2N4069 S| N LPA L.OW}] C] 175 150 150] 0 30 0.034 0.68 50M} T 2N4070 S| N 2N3448] 7-111 LPA 11l5w}] C] 200 100 80] 0 40] 120 5.0A L.5 0A 40], E 10M] 2N407 2 S|] N 9-112 HPA 1.5Wy] Cc} 200 40 20) 0 Lo 254 550M) T 2N4073 S| N 9-112 HPA 1.5W] Cc} 200 40 20} 0 10 25A 550M] T 2N4074 S| N RFA 400M) A} 175 40 40] 0 400] E 2N4075 S|] N 2N3764} 8-273 LPA 30W1 C{ 200 80; 0 30 90 30M | T 2N4076 S| N LPA 30W{ C} 200 80] 0 50] 150 30M} 2N4.080 S| P HPA 300M} A} 200 20 157 0 20 3. 0M 1.06] T 2N4082 thru Field Effect Transistors, see Table on Page 1-166 2N4085 2N4086 S| N] Mps6514] 5-109 AFA 200M] A 12 12] Of 150] 300 2.0M 150] E 2N4087 S| Ni} MPS6515] 5-109 AFA 200M] A 12 12] O} 250) 500 2,.0M 2507 E 2N4087A| S| N] MPS6515] 5-109 AFC 200M] A 12 12] OF} 250] 500 2.0M 250] FE 2N4088 thru Field Effect Transistors, see Table on Page 1-166 2N4095 2N4096 thru Thyristors, see Table on Page 1-154 2N4098 2N4099 S| N DFA 300M| A| 200 55 55] 0} 175 1.0M 150M} T 2N4 100 S| N DFA 400M| A} 200 55 55] O] 175 1.0M 150M} T 2N4101 thru Thyristors, see Table on Page 1-154 2N4103 2N4104 s| | | | Kral 300M| A| 175 60 60] 0 1400} E | 540M] T 2N4106 Gl P MP2060] 7-220 AFA L.6WEA 25 70| 350 5.0M 2N4108 thru Thyristors, see Table on Page 1-154 2Nn4110 2N4111 S| XN LPA 30W] C 100 60| 0 40] 120 2.04 70M; T 2N4112 S| N LPA 30W] C 100 60] O} 100] 300 2.0A 80M | T 2N4113 S| N LPA 30W] C 120 804 0 40] 120 2.04 70M | T 2N4114 S} N LPA 3.0W] A 120 80} O}] 100} 300 2.0A 80M] E 2N4115 S| N LPA 37W) C 120 80] 0 40] 120 2.0A 70M] E 2N4116 S| N LPA 37W 1 C 120 80] 0} 100) 300 2.04 80M] E 2N4117,A thru Field Effect Transistors, see Table on Page 1-166 2N4120A 2N4121 S| P 2N3905 | 5-16 RFA 200Mj, A| 125 40 40] 0 70 LOM 50] E 400M} T 2N4122 S| P 2N3906 | 5-16 RFA 200M] A} 125 40 40; O| 150 LOM 150] E 450M| T 2N4123 Sj N 5-21 HSA 310M} A] 135 40 30] 0 50} 150 2.0M 0.3 SOM 50] E 250M] T 2N4124 S|] N 5-21 HSA 310M} A] 135 30 254 0] 120] 360 2.0M 0.3 50M 120] E 300M] T 2N4125 St P 5-25 HSA 310M] A] 135 30 304 0 50} 150 2.0M 0.4 50M 50] E 200M] T 2N4126 Ss} P 5-25 HSA 310M} A] 135 25 25} O| 120] 360 2.0M 0.4 50M 120] E 250M] T 2N4127 S| N LPA 25Wi C 60 401 0 10 80 0.2A 300M | T 2N4128 S| N LPA 40W| C 60 40] 0 LO 80 0.2A 200M] T 2N4130 S| N LPA 120W] C 80 65] 0 10 60 2.0A 1,.25M] E 2N4131 S| N LPA 60W] C 90 80] 0 10 80 1,0A 150M} E 2N4134 S| N RFA 200M] A} 200 30 30] 0 200] E 350M] T 2N4135 SIN RFA 200M} A] 200 3 30] 0 200] E 425M/ T 2N4136 Pair of 2N2430 and 2N2431 2N4137 S| N PMS 360M} A] 200 40 40] 0 40] 120 LOM 500M{ T 2N4138 S| N CHP 300M] Ay 200 30 30] 0 50 1.0M 20M) T 2N4139 2N4140 SiN 2N4400] 5-34 RFA 300M} A] 125 60 30} 0 120 150M 250M} T 2N4141 S|] N 2N4401 } 5-34 RFA 300M} A} 125 60 30}; 0 300 150M 250M} T 2N4142 St P 2N4402 | 5-39 RFA 300M] Af 125 60 40] 0 120 150M 200M} T 2N4143 S} P 2N4403 | 5-39 RFA 300M] AJ 125 60 40] 0 300 L50M 200M | T 2N4144 thru Thyristors, sce Table on Page 1-154 284149 2na150 | s| n| | cea| swlc 100} so} of 4o] i120] 5.0 15M} T 2N4151 thru Thyristors, see Table on Page 1-154 2N4 204 2N4207 S|] P HSS 300M} A] 200 6.0 6.0] 0 50] 120 10M 650M) T 2N4208 S| P HSS 300M] Aq 200 12 12) 0 30] 120 10M 700M] T 2N4209 S| P HSS 300M} Aj 200 15 15] 0 50} 120 LOM 850M] T 2N4210 Sy N TPA LOOW | C 80 60] 0 20) 100 10A 10M} T 2N4211 S| N LPA 100W} C 100 80] 0 20] 100 1OA 10M! T 2N4212 thru Thyristors, see Table on Page 1-154 2N4216 i i i 1 ' ' 2N4220,A thru Field Effect Transistors, see Table on Page 1-166 2N4.224 2N4225 S|] N LPA 5.0W] Cc 100 40] 0 40] 150 1.0A 150M] T 2N4226 Ss; N LPA 5.0W} C 200 60] 0 40] 150 1.0A 150M} T 2N4227 S| N 2N4400 | 5-34 MSA 300M] A] 125 60 30; 0 150 150M 250M} T 1-146 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors 2N4072 (siticon) 2n4073 \ CASE 22 CASE 31 (TO-18) (TO-5) 2N4072 2N4073 MAXIMUM RATINGS Gor = 10 dB @ 175 MHz Pou: to 500 mW @ 175 MHz 7 == 50% @ 175 MHz Collector connected to case NPN silicon annular transistors designed as ampli- fiers and drivers for large-signal VHF and UHF ap- plications. Rating Symbol | 2N4072 2N4073 Unit Collector -Emitter Voltage Vero 20 Vdc Collector -Base Voltage Von 40 Vde Emitter-Base Voltage Ven 4.0 Vde Collector Current-Continuous In 100 150 mAdc Total Device Dissipation @ T, = 25C Py 0. 35 - Watt Derate Above 25C 2.0 - mW/C Total Device Dissipation @ T, = 25C Py - 1.5 Watts Derate above 25C - 8.57 mw/C Operating Junction and Storage Temperature Range Ty Tete -65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic Symbol | Min | Typ | Max | Unit | STATIC CHARACTERISTICS Collector -Emitter Sustaining Voltage BV, Vde (Ig = 15 made, I, = 0) CEO(sus}} 9g - - B Collector -Base Breakdown Voltage BV, BO Vde Mi, = 0.1 mAdc, Ip = 0) 40 - - Emitter-Base Breakdown Voltage BV BO Vde (I, = 0.1 mAdc, I, = 0) 4.0 - - E Cc Collector Cutoff Current lopo pAdc Wop = 15 Vde, le = 0) - - O14 Veg = 15 Vde, 1, = 0, Ty = 150C) - - 100 DC Current Gain hop - Me = 25 mAdc, Vor = 2 Vdc) 10 - - DYNAMIC CHARACTERISTICS Current -GainBandwidth Product fn MHz My = 25 mAdc, Vor * 10 Vde, f = 100 MHz) - 550 - Output Capacitance Cc pF (Von = 15 Vde, 1, = 0, f = 100 kHz) ob - 3.0 4.0 9-112 RF Transistors 2N4072, 2N4073 (continued) ELECTRICAL CHARACTERISTICS (continued) | Characteristic | Symbol | Min | Typ | Max | Unit | FUNCTIONAL TEST Power Gain 2N4072 Gpr 10 - - dB Test Circuit - Figure 5 Power Output Pa = 25 mw, Vor = 13.6 Vde, Pout 250 - - mW Collector Efficency |! * 17 MHz n 50 60 - % Power Gain 2N4073 Gor 10 - - dB Test Circuit - Figure 5 Power Output Pa = 50 mw, Vor = 13.6 Vde, Pout 500 650 - mW Collector Efficiency f= 175 MHz n 50 65 - % 2N4072 FIGURE 1 POWER OUTPUT versus FREQUENCY FIGURE 2 -- POWER OUTPUT versus POWER INPUT 300 300 f= 15 MHz Te = 25C 200 = = = = 200 = Vor = 13.6 Vde 2 2 To = 25C 3 & 100 & S 5 Vee = 15 Vde - 100 13.6 Vde a 70 ae 12 Vdc 50 40 0 150 200 250 300 400 0 10 15 f, FREQUENCY (MHz) Pin, POWER INPUT (mW) __ 2N4073 FIGURE 3 POWER OUTPUT versus FREQUENCY FIGURE 4 - POWER OUTPUT versus POWER INPUT f= 175 Miz Te = 25C 5 5 Vee = 15 Wc i= & 5 5 13.6 Vde 5 & 12 Vdc z a i a Vee = 136 Vee To = 25C 100 150 200 250300 400 0 10 20 30 40 50 1, FREQUENCY (MH2) Pin, POWER INPUT (mW) FIGURE 5 175 MHz TEST CIRCUIT ly 7-100 R. = 502 Rs = 50Q 1:30 L, 3 turns #16 tinned wire; Capacitor values in pF unless " ID air wound; otherwise indicated. winding tength 34 Tuning Capacitors are air variable. 470 1000 0.01 yF L, 6 turns #16 tinned wire; 14" 1D air wound; winding length 46 +13.6 Vde 9-113