Ordering number: EN 2960 No.2960 25C4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features - High breakdown voltage - Adoption of MBIT process - Excellent hyg linearity Absolute Maximum Ratings at Ta=25C Collector to Base Voltage Vcso Collector tu Emitter Voltage Vcro Emitter to Base Voltage VEBO Collector Current Ig Collector Current(Pulse) Icp Collector Dissipation Pc Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta=25C Collector Cutoff Current Icgo Emitter Cutoff Current Igpo DC Current Gain hrg Gain-Bandwidth Product fy C-E Saturation Voltage VccE(sat) B-E Saturation Voltage VBE(sat) C-B Breakdown Voltage V(BR)CBO C-E Breakdown Voltage V(BR)CEO i-B Breakdown Voltage VBR)EBO Output Capacitance Cob Reverse Transfer Capacitance re Turn-ON Time ton Turn-OFF Time tort * : The 28C4002 is classified by 50mA hpg as follows: 60 D 120 100 E 200 _ Switching Time Test Circuit OUTPUT INPUT lei -0O JL = Re PW=20us DCS 1% bo 100y 4701 Vec=150V o Vee=~1V 10la1= 10la2=Io=50mA RL =3kQ, Rgp=2002 at Ig=50mA Unit(Resistance : 0 ; Capacitance : F) unit 400 Vv 400 Vv 5 Vv 200 mA 400 mA 600 mW 150 36C 55t0 +150 C min typ max unit Vcp=300V, Ip =0 0.1 pA Vep=4V,Ic=0 0.1 pA Veg=10V,I=50mA 60% 200% Veg =30V,Ic=10mA 70 MHz Ic=50mA,Ip=5mA 0.6 Vv I=50mA, Ip =5mA 10 Vv Ig=10pA,Ip=0 400 Vv Ic=1mA,Rgr= 400 Vv Ig=10pA,Ic=0 5 Vv Vop=30V,f=1MHz 4 pF Vcp=30V,f=1MHz 3 pF See specified Test Circuit. 0.25 ps 5.0 BS Case Outline 2003A (unit : mm) 20 0.46 I = 2 [te os | | wot Las JEDEC:. TO-92 B. Base EIAJ.: SC~43 C. Collector SANYO: NP E. Emitter Specifications and information herein are subject to change without notice. TOKYO OFFICE Tokyo Bldg 6139MO,TS No.2960-1/2 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters 1-10, 1 Chome, Ueno, Taito-ku, TOKYO. 110 JAPAN me 7997076 0015637 Tic 171 28C4002 120 ic VBE Voe=10V 8 s Collector Current,Ic mA 0 0.2 0.4 0.6 1.2 1-4 0.8 1.0 Base to Emitter Voltage, Vag V Vi Ic Io / B=10 _ Saturation Voltage, Vcxyeat) V Collector to Emitter 10 100 Collector Current,Ig mA Switching Time Ic tstg 1.0 Switching Time,SW Time ps 0.4 ,Ta= Voo=150V 10la1= 10lp2=Io 1.0 10 100 Collector Current,Ig mA 70 Pc Ta = 60 g "ol LS oO iM 2 sy \ 3 g N\ 4 300 N a IN 20 Nt 3 NX & 10 SS 0 N : 0 2 40 & 8 10 120 140 160 Ambient Temperature,Ta C 172 hre Ic 8 DC Current Gain,hpp 10 10 ~ "$00 Collector Current,I; mA Vv - Ic 40 le / tp=10 Saturation Voltage, Vpgieaty V Base to Emitter 1.0 10 100 Collector Current,I, mA A Ss 0 8 Collector CurrentIg mA 3s ~ 10 100 Collector to Emitter Voltage, Vog V me 7997076 0015638 525 CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @ No marking is indicated. @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by 2.0 Case Outline 2003A/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) 2.0 0.44 2.0 0.46 tt pom 29 SE 29 3 Li) ~ 4 0.65 5. * 4.0 5.0 14.0 +] 40 JEDEC :TO-92 1: Source JEDEC 2702 1: Bmitter BIAS: SC-43 2: Gate EIAJ :SC-43 2: Collector SANYO :NP 3. Drain SANYO : NP 3: Base 74h . Case Outline 2004A (unit : mm) Case Outline 2033 (unit : mm) 0.44 2.2 + 3 >} 15.0 | Reds 2 rs 2p aq ., |-pe te m 492 wy FF =+4 ai j4 FE = [a | | 4 14.0 leo 1:Emitter * JEDEC :TO-92 1: Base 2: Collector BIAJ :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) 2.0 0.66 22 1.3 1.3 5.0 14.0 | 0.4 . 1: Source JEDEC :TO-92 1: Drain 2: Gate . EIAJ :SC-43 ; : Source 3: Drain . : : Gate SANYO : NP SANYO: SPA Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) 22 3.0 0.5 pop wn Set | 2 it. b=2--f ( - {a we 4 a 42 1: Drain EIAJ :$C-61 1: Emitter 2: Source SANYO ; MP 2: Collector 3: Gate 3: Base SANYO: SPA Me 7997076 0015489 525 a 16 Case Outline 2061 (unit : mm) 2.0 0.44 45 = _ bag = a 0.45 lho oa JEDEC :TO-92 : 1: Emitter EIAJ =: SC-43 2: Base SANYO : NP 3: Collector Case Outline 2064 (unit : mm) us 1 69 : ~ hd toe a qt} jos |S r2 3 hos. Ton Vou} 1: Emitter LOL Paty 2: CoHector | 3: Bose 2.94 254 SANYO: NMP Case Outline 2084A (unit:mm) __,, pre 10.5 LB I . 4 Lite tT }_afla.2 le 9.5. s i + | U tL to2 49 1: Emitter 2: Collector 3: Base 2.3 15) SANYO: FLP mm 7997076 0015490 240 17